Jean-Pierre Raskin
Jean-Pierre Raskin
Université catholique de Louvain, Engineering School of Louvain
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Cited by
Substrate crosstalk reduction using SOI technology
JP Raskin, A Viviani, D Flandre, JP Colinge
IEEE Transactions on Electron Devices 44 (12), 2252-2261, 1997
New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity
D Lederer, JP Raskin
IEEE Electron Device Letters 26 (11), 805-807, 2005
Influence of device engineering on the analog and RF performances of SOI MOSFETs
V Kilchytska, A Neve, L Vancaillie, D Levacq, S Adriaensen, H van Meer, ...
IEEE Transactions on Electron Devices 50 (3), 577-588, 2003
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
S Yadav, P Cardinael, M Zhao, K Vondkar, U Peralagu, A Alian, A Khaled, ...
2021 International Conference on IC Design and Technology (ICICDT), 1-4, 2021
Arsenic-segregated rare-earth silicide junctions: reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI
G Larrieu, DA Yarekha, E Dubois, N Breil, O Faynot
IEEE Electron Device Letters 30 (12), 1266-1268, 2009
Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs
G Larrieu, E Dubois, R Valentin, N Breil, F Danneville, G Dambrine, ...
2007 IEEE International Electron Devices Meeting, 147-150, 2007
Fabrication method of so1 semiconductor devices
D Fladre, A De Mevergnies, JP Raskins
US Patent App. 10/471,847, 2004
Raman and XPS characterization of vanadium oxide thin films with temperature
F Ureńa-Begara, A Crunteanu, JP Raskin
Applied Surface Science 403, 717-727, 2017
Identification of RF harmonic distortion on Si substrates and its reduction using a trap-rich layer
DC Kerr, JM Gering, TG McKay, MS Carroll, CR Neve, JP Raskin
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF …, 2008
A 94-GHz aperture-coupled micromachined microstrip antenna
GP Gauthier, JP Raskin, LPB Katehi, GM Rebeiz
IEEE Transactions on Antennas and Propagation 47 (12), 1761-1766, 1999
Semiconductor-on-insulator materials for nanoelectronics applications
A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko
Springer Berlin Heidelberg, 2011
Low-temperature wafer bonding: a study of void formation and influence on bonding strength
XX Zhang, JP Raskin
Journal of microelectromechanical systems 14 (2), 368-382, 2005
Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers
D Lederer, JP Raskin
Solid-State Electronics 47 (11), 1927-1936, 2003
Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling
JP Raskin, R Gillon, J Chen, D Vanhoenacker-Janvier, JP Colinge
IEEE Transactions on Electron Devices 45 (5), 1017-1025, 1998
Comparison of TiSi2, CoSi2, and NiSi for thin‐film silicon‐on‐insulator applications
J Chen, JP Colinge, D Flandre, R Gillon, JP Raskin, D Vanhoenacker
Journal of the Electrochemical Society 144 (7), 2437, 1997
Micromachined thin-film sensors for SOI-CMOS co-integration
J Laconte, D Flandre, JP Raskin
Springer Science & Business Media, 2006
Inter-and intragranular plasticity mechanisms in ultrafine-grained Al thin films: An in situ TEM study
F Mompiou, M Legros, A Boé, M Coulombier, JP Raskin, T Pardoen
Acta materialia 61 (1), 205-216, 2013
Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization
JP Raskin, TM Chung, V Kilchytska, D Lederer, D Flandre
IEEE Transactions on Electron Devices 53 (5), 1088-1095, 2006
What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?
G Dambrine, C Raynaud, D Lederer, M Dehan, O Rozeaux, ...
IEEE Electron Device Letters 24 (3), 189-191, 2003
Junctionless transistors: physics and properties
JP Colinge, CW Lee, N Dehdashti Akhavan, R Yan, I Ferain, P Razavi, ...
Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 187-200, 2011
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