| Substrate crosstalk reduction using SOI technology JP Raskin, A Viviani, D Flandre, JP Colinge IEEE Transactions on Electron Devices 44 (12), 2252-2261, 1997 | 396 | 1997 |
| New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity D Lederer, JP Raskin IEEE Electron Device Letters 26 (11), 805-807, 2005 | 264 | 2005 |
| Influence of device engineering on the analog and RF performances of SOI MOSFETs V Kilchytska, A Neve, L Vancaillie, D Levacq, S Adriaensen, H van Meer, ... IEEE Transactions on Electron Devices 50 (3), 577-588, 2003 | 263 | 2003 |
| CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities S Yadav, P Cardinael, M Zhao, K Vondkar, U Peralagu, A Alian, A Khaled, ... 2021 International Conference on IC Design and Technology (ICICDT), 1-4, 2021 | 257 | 2021 |
| Arsenic-segregated rare-earth silicide junctions: reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI G Larrieu, DA Yarekha, E Dubois, N Breil, O Faynot IEEE Electron Device Letters 30 (12), 1266-1268, 2009 | 236 | 2009 |
| Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs G Larrieu, E Dubois, R Valentin, N Breil, F Danneville, G Dambrine, ... 2007 IEEE International Electron Devices Meeting, 147-150, 2007 | 236 | 2007 |
| Fabrication method of so1 semiconductor devices D Fladre, A De Mevergnies, JP Raskins US Patent App. 10/471,847, 2004 | 223 | 2004 |
| Raman and XPS characterization of vanadium oxide thin films with temperature F Ureńa-Begara, A Crunteanu, JP Raskin Applied Surface Science 403, 717-727, 2017 | 214 | 2017 |
| Identification of RF harmonic distortion on Si substrates and its reduction using a trap-rich layer DC Kerr, JM Gering, TG McKay, MS Carroll, CR Neve, JP Raskin 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF …, 2008 | 169 | 2008 |
| A 94-GHz aperture-coupled micromachined microstrip antenna GP Gauthier, JP Raskin, LPB Katehi, GM Rebeiz IEEE Transactions on Antennas and Propagation 47 (12), 1761-1766, 1999 | 164 | 1999 |
| Semiconductor-on-insulator materials for nanoelectronics applications A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko Springer Berlin Heidelberg, 2011 | 154 | 2011 |
| Low-temperature wafer bonding: a study of void formation and influence on bonding strength XX Zhang, JP Raskin Journal of microelectromechanical systems 14 (2), 368-382, 2005 | 153 | 2005 |
| Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers D Lederer, JP Raskin Solid-State Electronics 47 (11), 1927-1936, 2003 | 153 | 2003 |
| Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling JP Raskin, R Gillon, J Chen, D Vanhoenacker-Janvier, JP Colinge IEEE Transactions on Electron Devices 45 (5), 1017-1025, 1998 | 147 | 1998 |
| Comparison of TiSi2, CoSi2, and NiSi for thin‐film silicon‐on‐insulator applications J Chen, JP Colinge, D Flandre, R Gillon, JP Raskin, D Vanhoenacker Journal of the Electrochemical Society 144 (7), 2437, 1997 | 145 | 1997 |
| Micromachined thin-film sensors for SOI-CMOS co-integration J Laconte, D Flandre, JP Raskin Springer Science & Business Media, 2006 | 143 | 2006 |
| Inter-and intragranular plasticity mechanisms in ultrafine-grained Al thin films: An in situ TEM study F Mompiou, M Legros, A Boé, M Coulombier, JP Raskin, T Pardoen Acta materialia 61 (1), 205-216, 2013 | 137 | 2013 |
| Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization JP Raskin, TM Chung, V Kilchytska, D Lederer, D Flandre IEEE Transactions on Electron Devices 53 (5), 1088-1095, 2006 | 135 | 2006 |
| What are the limiting parameters of deep-submicron MOSFETs for high frequency applications? G Dambrine, C Raynaud, D Lederer, M Dehan, O Rozeaux, ... IEEE Electron Device Letters 24 (3), 189-191, 2003 | 130 | 2003 |
| Junctionless transistors: physics and properties JP Colinge, CW Lee, N Dehdashti Akhavan, R Yan, I Ferain, P Razavi, ... Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 187-200, 2011 | 129 | 2011 |
Denis FlandreICTEAM, EPL, Université catholique de Louvain (UCL)Verified email at uclouvain.be
