| van der Waals Heterostructures with High Accuracy Rotational Alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016 | 622 | 2016 |
| High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015 | 294 | 2015 |
| Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016 | 224 | 2016 |
| Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015 | 222 | 2015 |
| Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe 2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility B Fallahazad, HCP Movva, K Kim, S Larentis, T Taniguchi, K Watanabe, ... Physical Review Letters 116 (8), 086601, 2016 | 196 | 2016 |
| Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ... Nano letters 15 (1), 428-433, 2014 | 192 | 2014 |
| CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films ME Ramon, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ... Acs Nano 5 (9), 7198-7204, 2011 | 150 | 2011 |
| Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee Crystals 8 (8), 316, 2018 | 144 | 2018 |
| Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface JH Park, A Sanne, Y Guo, M Amani, K Zhang, HCP Movva, JA Robinson, ... Science Advances 3 (10), e1701661, 2017 | 125 | 2017 |
| Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ... ACS nano 11 (5), 4832-4839, 2017 | 122 | 2017 |
| Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer HCP Movva, B Fallahazad, K Kim, S Larentis, T Taniguchi, K Watanabe, ... Physical Review Letters 118 (24), 247701, 2017 | 117 | 2017 |
| Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si (111)-(7× 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ... Applied Physics Letters 102 (16), 2013 | 98 | 2013 |
| Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in S Larentis, HCP Movva, B Fallahazad, K Kim, A Behroozi, T Taniguchi, ... Physical Review B 97 (20), 201407, 2018 | 97 | 2018 |
| Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ... Applied Physics Letters 106 (6), 062101, 2015 | 95 | 2015 |
| Three-gigahertz graphene frequency doubler on quartz operating beyond the transit frequency ME Ramón, KN Parrish, SF Chowdhury, CW Magnuson, HCP Movva, ... IEEE Transactions on Nanotechnology 11 (5), 877-883, 2012 | 86 | 2012 |
| Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ... IEEE Electron Device Letters 36 (4), 405-407, 2015 | 66 | 2015 |
| Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors D Wu, W Li, A Rai, X Wu, HCP Movva, MN Yogeesh, Z Chu, SK Banerjee, ... Nano letters 19 (3), 1976-1981, 2019 | 44 | 2019 |
| Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ... Nano Letters 16 (8), 4975-4981, 2016 | 41 | 2016 |
| Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ... Applied Physics Letters 104 (22), 2014 | 40 | 2014 |
| Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures K Kim, N Prasad, HCP Movva, GW Burg, Y Wang, S Larentis, T Taniguchi, ... Nano letters 18 (9), 5967-5973, 2018 | 34 | 2018 |
Emanuel TutucProfessor, The University of Texas at AustinVerified email at mer.utexas.edu
