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Bin Gao
Bin Gao
Tsinghua University
Verified email at pku.edu.cn
Title
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Cited by
Year
Fully hardware-implemented memristor convolutional neural network
P Yao, H Wu, B Gao, J Tang, Q Zhang, W Zhang, JJ Yang, H Qian
Nature 577 (7792), 641-646, 2020
11282020
Face classification using electronic synapses
P Yao, H Wu, B Gao, SB Eryilmaz, X Huang, W Zhang, Q Zhang, N Deng, ...
Nature communications 8 (1), 15199, 2017
7412017
A low energy oxide‐based electronic synaptic device for neuromorphic visual systems with tolerance to device variation
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
Advanced Materials 25 (12), 1774-1779, 2013
5012013
Bridging biological and artificial neural networks with emerging neuromorphic devices: fundamentals, progress, and challenges
J Tang, F Yuan, X Shen, Z Wang, M Rao, Y He, Y Sun, X Li, W Zhang, Y Li, ...
Advanced Materials 31 (49), 1902761, 2019
3672019
A HfOx Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
S Yu, HY Chen, B Gao, J Kang, HSP Wong
ACS nano, 2013
3452013
HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector
HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong
2012 International Electron Devices Meeting, 20.7. 1-20.7. 4, 2012
3392012
Neuro-inspired computing chips
W Zhang, B Gao, J Tang, P Yao, S Yu, MF Chang, HJ Yoo, H Qian, H Wu
Nature electronics 3 (7), 371-382, 2020
3082020
Understanding memristive switching via in situ characterization and device modeling
W Sun, B Gao, M Chi, Q Xia, JJ Yang, H Qian, H Wu
Nature communications 10 (1), 3453, 2019
2342019
Gd-doping effect on performance of based resistive switching memory devices using implantation approach
H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han, J Kang, B Yu
Applied Physics Letters 98 (4), 042105, 2011
2222011
Binary neural network with 16 Mb RRAM macro chip for classification and online training
S Yu, Z Li, PY Chen, H Wu, B Gao, D Wang, W Wu, H Qian
2016 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2016
2162016
A neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
2012 International Electron Devices Meeting, 10.4. 1-10.4. 4, 2012
2162012
Unified physical model of bipolar oxide-based resistive switching memory
B Gao, B Sun, H Zhang, L Liu, X Liu, R Han, J Kang, B Yu
IEEE Electron Device Letters 30 (12), 1326-1328, 2009
2032009
Ionic doping effect in ZrO resistive switching memory
H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ...
Applied Physics Letters 96, 123502, 2010
2002010
Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer
W Wu, H Wu, B Gao, N Deng, S Yu, H Qian
IEEE Electron Device Letters 38 (8), 1019-1022, 2017
1922017
A physics-based compact model of metal-oxide-based RRAM DC and AC operations
P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
IEEE transactions on electron devices 60 (12), 4090-4097, 2013
1882013
RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ...
IEEE, 2013
1822013
Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems
B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ...
ACS nano 8 (7), 6998-7004, 2014
1792014
Reliability of analog resistive switching memory for neuromorphic computing
M Zhao, B Gao, J Tang, H Qian, H Wu
Applied Physics Reviews 7 (1), 011301, 2020
1732020
Stochastic learning in oxide binary synaptic device for neuromorphic computing
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
Frontiers in neuroscience 7, 186, 2013
1712013
Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing
Y Zhong, J Tang, X Li, B Gao, H Qian, H Wu
Nature communications 12 (1), 408, 2021
1682021
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