Gengchiau Liang

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Kai Tak LamPostdoctoral Associate, Department of Electrical and Computer Engineering, University of FloridaVerified email at ufl.edu
Xiao GongNational University of SingaporeVerified email at nus.edu.sg
Mansoor B. A. JalilNational University of SingaporeVerified email at nus.edu.sg
avik W ghoshProfessor, University of Virginia, Electrical EngineeringVerified email at virginia.edu
Seng Ghee TanTheoretical Physicist (Applied)Verified email at dsi.a-star.edu.sg
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Zhifeng ZhuSchool of Information Science and Technology, ShanghaiTech UniversityVerified email at shanghaitech.edu.cn
Dmitri E. NikonovPrincipal Engineer, IntelVerified email at intel.com
Neophytos NeophytouSchool of Engineering, University of WarwickVerified email at warwick.ac.uk
Yuan DONGInstitute of Microelectronics (IME, A*Star), and National University of Singapore (NUS)Verified email at u.nus.edu
Gaurav GuptaSpin DevicesVerified email at spindevices.com
Supriyo DattaProfessor, Purdue UniversityVerified email at purdue.edu
Hyunsoo YangElectrical and Computer Engineering, National University of SingaporeVerified email at nus.edu.sg
Yuan Ping FengDepartment of Physics, National University of SingaporeVerified email at nus.edu.sg
Ganesh SamudraAssociate Professor, National University of SingaporeVerified email at nus.edu.sg
Can YesilyurtNational University of SingaporeVerified email at u.nus.edu
MINGGANG ZENGData Storage Institute (DSI), Agency for Science, Technology and Research (A*STAR) , SingaporeVerified email at dsi.a-star.edu.sg
Jian-Sheng WangDepartment of Physics, National University of SingaporeVerified email at nus.edu.sg
Jie XiangWolf Greenfield & Sacks, P.C.Verified email at wolfgreenfield.com
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu

Gengchiau Liang

National University of Singapore

Verified email at nus.edu.sg - Homepage

Nanoelectronics Computational Nanoelectronics Nanodevice modeling


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Performance projections for ballistic graphene nanoribbon field-effect transistors G Liang, N Neophytou, DE Nikonov, MS Lundstrom IEEE Transactions on Electron Devices 54 (4), 677-682, 2007	292	2007
Silicon-based molecular electronics T Rakshit, GC Liang, AW Ghosh, S Datta Nano Letters 4 (10), 1803-1807, 2004	251	2004
Thermoelectric performance of MX₂ (M = Mo,W; X = S,Se) monolayers W Huang, H Da, G Liang Journal of Applied Physics 113 (10), 104304, 2013	239	2013
Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed Y Hu, J Xiang, G Liang, H Yan, CM Lieber Nano letters 8 (3), 925-930, 2008	204	2008
Performance analysis of a Ge/Si core/shell nanowire field-effect transistor G Liang, J Xiang, N Kharche, G Klimeck, CM Lieber, M Lundstrom Nano letters 7 (3), 642-646, 2007	200	2007
Theoretical study of thermoelectric properties of few-layer MoS 2 and WSe 2 W Huang, X Luo, CK Gan, SY Quek, G Liang Physical Chemistry Chemical Physics 16 (22), 10866-10874, 2014	195	2014
Graphene-based spin caloritronics M Zeng, Y Feng, G Liang Nano letters 11 (3), 1369-1373, 2011	190	2011
Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons X Ni, G Liang, JS Wang, B Li Applied Physics Letters 95 (19), 192114, 2009	160	2009
All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe₂/ferromagnet heterostructures S Shi, S Liang, Z Zhu, K Cai, SD Pollard, Y Wang, J Wang, Q Wang, P He, ... Nature nanotechnology 14 (10), 945-949, 2019	157	2019
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation G Liang, N Neophytou, MS Lundstrom, DE Nikonov Journal of Applied Physics 102 (5), 054307, 2007	152	2007
Electrostatic potential profiles of molecular conductors GC Liang, AW Ghosh, M Paulsson, S Datta Physical Review B 69 (11), 115302, 2004	145	2004
Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets K Cai, Z Zhu, JM Lee, R Mishra, L Ren, SD Pollard, P He, G Liang, KL Teo, ... Nature Electronics 3 (1), 37-42, 2020	121	2020
Single atomically sharp lateral monolayer p‐n heterojunction solar cells with extraordinarily high power conversion efficiency ML Tsai, MY Li, JRD Retamal, KT Lam, YC Lin, K Suenaga, LJ Chen, ... Advanced materials 29 (32), 1701168, 2017	113	2017
High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection S Lukman, L Ding, L Xu, Y Tao, AC Riis-Jensen, G Zhang, QYS Wu, ... Nature Nanotechnology 15 (8), 675-682, 2020	94	2020
Contact effects in graphene nanoribbon transistors G Liang, N Neophytou, MS Lundstrom, DE Nikonov Nano letters 8 (7), 1819-1824, 2008	88	2008
An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges KT Lam, G Liang Applied Physics Letters 92 (22), 223106, 2008	84	2008
Theoretical study on thermoelectric properties of kinked graphene nanoribbons W Huang, JS Wang, G Liang Physical Review B 84 (4), 045410, 2011	77	2011
A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel KT Lam, D Seah, SK Chin, SB Kumar, G Samudra, YC Yeo, G Liang IEEE Electron Device Letters 31 (6), 555-557, 2010	75	2010
Molecules on silicon: Self-consistent first-principles theory and calibration to experiments T Rakshit, GC Liang, AW Ghosh, MC Hersam, S Datta Physical Review B 72 (12), 125305, 2005	74	2005
Device physics and characteristics of graphene nanoribbon tunneling FETs SK Chin, D Seah, KT Lam, GS Samudra, G Liang IEEE transactions on electron devices 57 (11), 3144-3152, 2010	70	2010

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