| Characterization and modeling of 10-kV silicon carbide modules for naval applications AN Lemmon, RC Graves, RL Kini, MR Hontz, R Khanna IEEE Journal of Emerging and Selected Topics in Power Electronics 5 (1), 309-322, 2016 | 46 | 2016 |
| An analytical model for predicting turn-ON overshoot in normally-OFF GaN HEMTs JP Kozak, A Barchowsky, MR Hontz, NB Koganti, WE Stanchina, GF Reed, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 99-110, 2019 | 24 | 2019 |
| Analytical and experimental optimization of external gate resistance for safe rapid turn on of normally off GaN HFETs A Barchowsky, JP Kozak, MR Hontz, WE Stanchina, GF Reed, ZH Mao, ... 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 1958-1963, 2017 | 22 | 2017 |
| A simple edge termination design for vertical GaN PN diodes P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ... IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022 | 17 | 2022 |
| Modeling and characterization of vertical GaN Schottky diodes with AlGaN cap layers MR Hontz, Y Cao, M Chen, R Li, A Garrido, R Chu, R Khanna IEEE Transactions on electron devices 64 (5), 2172-2178, 2017 | 17 | 2017 |
| Effects of parasitic inductance on performance of 600-V GaN devices AJ Sellers, C Tine, RL Kini, MR Hontz, R Khanna, AN Lemmon, ... 2017 IEEE Electric Ship Technologies Symposium (ESTS), 50-55, 2017 | 14 | 2017 |
| Comparison of GaN and Si-based photovoltaic power conversion circuits using various maximum power point tracking algorithms RL Kini, AJ Sellers, MR Hontz, MR Kabir, R Khanna 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2977-2982, 2017 | 14 | 2017 |
| TCAD modeling of a lateral GaN HEMT using empirical data MR Hontz, R Chu, R Khanna 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 244-248, 2018 | 12 | 2018 |
| An automated model tuning procedure for optimizing prediction of transient and dispersive behavior in wide bandgap semiconductor FETs AJ Sellers, MR Hontz, R Khanna, AN Lemmon, BT DeBoi, A Shahabi IEEE Transactions on Power Electronics 35 (11), 12252-12263, 2020 | 10 | 2020 |
| Comparison of methods for switching loss estimation in WBG systems C New, AN Lemmon, BT DeBoi, MR Hontz, AJ Sellers, R Khanna 2019 IEEE Electric Ship Technologies Symposium (ESTS), 569-576, 2019 | 9 | 2019 |
| An automated SPICE modeling procedure utilizing static and dynamic characterization of power FETs AJ Sellers, MR Hontz, R Khanna, AN Lemmon, A Shahabi 2018 IEEE applied power electronics conference and exposition (APEC), 255-262, 2018 | 9 | 2018 |
| Hybrid edge termination in vertical GaN: approximating beveled edge termination via Discrete Implantations T Nelson, P Pandey, DG Georgiev, MR Hontz, AD Koehler, KD Hobart, ... IEEE Transactions on Electron Devices 69 (12), 6940-6947, 2022 | 7 | 2022 |
| An investigation of frequency dependent reliability and failure mechanism of pGaN gated GaN HEMTs RL Kini, S Dhakal, S Mahmud, AJ Sellers, MR Hontz, CA Tine, R Khanna IEEE Access 8, 137312-137321, 2020 | 7 | 2020 |
| An optimization framework for GaN power device design and applications MR Hontz, W Collings, A Courtay, R Khanna 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 5 | 2019 |
| Effect of substrate choice on transient performance of lateral GaN FETs MR Hontz, R Chu, R Khanna IEEE Journal of the Electron Devices Society 8, 331-335, 2020 | 4 | 2020 |
| Isolated/non-isolated quad-inverter configuration for multilevel symmetrical/asymmetrical dual six-phase star-winding converter S Padmanaban, MR Hontz, R Khanna, PW Wheeler, F Blaabjerg, JO Ojo 2016 IEEE 25th International Symposium on Industrial Electronics (ISIE), 498-503, 2016 | 4 | 2016 |
| Examination of trapping effects on single-event transients in GaN HEMTs T Nelson, DG Georgiev, MR Hontz, R Khanna, A Ildefonso, AD Koehler, ... IEEE Transactions on Nuclear Science 70 (4), 328-335, 2022 | 3 | 2022 |
| Effects of control-FET gate resistance on false turn-on in GaN based point of load converter NB Koganti, S Dhakal, RL Kini, MR Hontz, R Khanna NAECON 2018-IEEE National Aerospace and Electronics Conference, 339-343, 2018 | 3 | 2018 |
| Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance P Pandey, TM Nelson, MR Hontz, DG Georgiev, R Khanna, AG Jacobs, ... IEEE Transactions on Electron Devices, 2024 | 1 | 2024 |
| Scaled Projections of Empirically Verified Hybrid Edge Terminated Vertical GaN Diodes to 20 kV T Nelson, P Pandey, DG Georgiev, R Khanna, MR Hontz, AG Jacobs, ... 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2023 | 1 | 2023 |
Raghav KhannaUniversity of ToledoVerified email at utoledo.edu
