Alexandros I. Georgakilas
Alexandros I. Georgakilas
Professor of Applied Physics, University of Crete & FORTH, Greece
Verified email at - Homepage
Cited by
Cited by
Nitride semiconductors
P Ruterana, M Albrecht, J Neugebauer
Handbook on Materials and Devices, 2003
Electromigration and electronic device degradation
A Christou
(No Title), 1994
InAlN/GaN HEMTs: A first insight into technological optimization
J Kuzmik, A Kostopoulos, G Konstantinidis, JF Carlin, A Georgakilas, ...
IEEE transactions on electron devices 53 (3), 422-426, 2006
Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry
E Iliopoulos, A Adikimenakis, C Giesen, M Heuken, A Georgakilas
Applied Physics Letters 92 (19), 2008
Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
E Dimakis, E Iliopoulos, K Tsagaraki, T Kehagias, P Komninou, ...
Journal of applied physics 97 (11), 2005
Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy
A Georgakilas, P Panayotatos, J Stoemenos, JL Mourrain, A Christou
Journal of applied physics 71 (6), 2679-2701, 1992
Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy
T Kehagias, GP Dimitrakopulos, J Kioseoglou, H Kirmse, C Giesen, ...
Applied Physics Letters 95 (7), 2009
Realistic end-to-end simulation of the optoelectronic links and comparison with the electrical interconnections for system-on-chip applications
ED Kyriakis-Bitzaros, N Haralabidis, M Lagadas, A Georgakilas, ...
Journal of lightwave technology 19 (10), 1532, 2001
Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth
E Iliopoulos, A Adikimenakis, E Dimakis, K Tsagaraki, G Konstantinidis, ...
Journal of crystal growth 278 (1-4), 426-430, 2005
Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy
E Dimakis, E Iliopoulos, K Tsagaraki, A Adikimenakis, A Georgakilas
Applied physics letters 88 (19), 2006
InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy
E Iliopoulos, A Georgakilas, E Dimakis, A Adikimenakis, K Tsagaraki, ...
physica status solidi (a) 203 (1), 102-105, 2006
Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of (0001) substrates
S Mikroulis, A Georgakilas, A Kostopoulos, V Cimalla, E Dimakis, ...
Applied Physics Letters 80 (16), 2886-2888, 2002
Gate‐lag and drain‐lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs
J Kuzmik, JF Carlin, M Gonschorek, A Kostopoulos, G Konstantinidis, ...
physica status solidi (a) 204 (6), 2019-2022, 2007
Micro-Raman characterization of heterostructures
AG Kontos, YS Raptis, NT Pelekanos, A Georgakilas, E Bellet-Amalric, ...
Physical Review B 72 (15), 155336, 2005
Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy
A Georgakilas, J Stoemenos, K Tsagaraki, P Komninou, N Flevaris, ...
Journal of materials research 8 (8), 1908-1921, 1993
Temperature dependence of GaN Schottky diodes I–V characteristics
J Osvald, J Kuzmik, G Konstantinidis, P Lobotka, A Georgakilas
Microelectronic Engineering 81 (2-4), 181-187, 2005
Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy
SL Sahonta, GP Dimitrakopulos, T Kehagias, J Kioseoglou, ...
Applied Physics Letters 95 (2), 2009
Bowing of the band gap pressure coefficient in InxGa1− xN alloys
G Franssen, I Gorczyca, T Suski, A Kamińska, J Pereiro, E Munoz, ...
Journal of Applied Physics 103 (3), 2008
Gallium nitride-based potentiometric anion sensor
NA Chaniotakis, Y Alifragis, G Konstantinidis, A Georgakilas
Analytical chemistry 76 (18), 5552-5556, 2004
Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy
E Dimakis, E Iliopoulos, K Tsagaraki, A Georgakilas
Applied Physics Letters 86 (13), 2005
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