Follow
Deniz Najafi
Title
Cited by
Cited by
Year
A single-ended low leakage and low voltage 10T SRAM cell with high yield
N Eslami, B Ebrahimi, E Shakouri, D Najafi
Analog Integrated Circuits and Signal Processing 105, 263-274, 2020
352020
A low-leakage 6T SRAM cell for in-memory computing with high stability
D Najafi, B Ebrahimi
2021 29th Iranian Conference on Electrical Engineering (ICEE), 98-102, 2021
42021
Accelerating Low Bit-width Neural Networks at the Edge, PIM or FPGA: A Comparative Study
N Kochar, L Ekiert, D Najafi, D Fan, S Angizi
Proceedings of the Great Lakes Symposium on VLSI 2023, 625-630, 2023
12023
Lightator: An Optical Near-Sensor Accelerator with Compressive Acquisition Enabling Versatile Image Processing
M Morsali, B Reidy, D Najafi, S Tabrizchi, M Imani, M Nikdast, A Roohi, ...
arXiv preprint arXiv:2403.05037, 2024
2024
Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design
D Najafi, M Morsali, R Zhou, A Roohi, A Marshall, D Misra, S Angizi
IEEE Transactions on Electron Devices 71 (4), 2742-2748, 2024
2024
PANDA: Processing in Magnetic Random-Access Memory-Accelerated de Bruijn Graph-Based DNA Assembly
S Angizi, NA Fahmi, D Najafi, W Zhang, D Fan
Journal of Low Power Electronics and Applications 14 (1), 9, 2024
2024
OISA: Architecting an Optical In-Sensor Accelerator for Efficient Visual Computing
M Morsali, S Tabrizchi, D Najafi, M Imani, M Nikdast, A Roohi, S Angizi
arXiv preprint arXiv:2311.18655, 2023
2023
ECE 394-DIGITAL SYSTEMS LAB
D Najafi
2023
FinFET SRAM cells Design and comparison for higher write stability
E Shakouri, B Ebrahimi, D Najafi
the 1st Iranian Conference of Microelectronic 1 (Civilica), 6, 2019
2019
The system can't perform the operation now. Try again later.
Articles 1–9