| An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR O Jardel, F De Groote, T Reveyrand, JC Jacquet, C Charbonniaud, ... IEEE Transactions on Microwave Theory and Techniques 55 (12), 2660-2669, 2007 | 306 | 2007 |
| SThM temperature mapping and nonlinear thermal resistance evolution with bias on AlGaN/GaN HEMT devices R Aubry, JC Jacquet, J Weaver, O Durand, P Dobson, G Mills, ... IEEE transactions on electron devices 54 (3), 385-390, 2007 | 115 | 2007 |
| Process for producing magnetoresistive transducers JC Jacquet, T Valet US Patent 5,961,848, 1999 | 96 | 1999 |
| Surface potential of n-and p-type GaN measured by Kelvin force microscopy S Barbet, R Aubry, MA di Forte-Poisson, JC Jacquet, D Deresmes, T Melin, ... Applied Physics Letters 93 (21), 2008 | 90 | 2008 |
| A new magnetooptical effect discovered on magnetic multilayers: the magnetorefractive effect JC Jacquet, T Valet MRS Online Proceedings Library (OPL) 384, 477, 1995 | 81 | 1995 |
| 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers S Piotrowicz, Z Ouarch, E Chartier, R Aubry, G Callet, D Floriot, ... 2010 IEEE MTT-S International Microwave Symposium, 505-508, 2010 | 70 | 2010 |
| State of the art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers S Piotrowicz, E Morvan, R Aubry, S Bansropun, T Bouvet, E Chartier, ... 2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 1-4, 2008 | 65 | 2008 |
| ICP-CVD SiN passivation for high-power RF InAlGaN/GaN/SiC HEMT R Aubry, JC Jacquet, M Oualli, O Patard, S Piotrowicz, E Chartier, ... IEEE Electron Device Letters 37 (5), 629-632, 2016 | 50 | 2016 |
| Thermal characterization using optical methods of AlGaN/GaN HEMTs on SiC substrate in RF operating conditions L Baczkowski, JC Jacquet, O Jardel, C Gaquière, M Moreau, D Carisetti, ... IEEE Transactions on Electron Devices 62 (12), 3992-3998, 2015 | 49 | 2015 |
| Interplay between oscillatory exchange coupling and coercivities in giant magnetoresistive [Ni80Fe20/Cu/Co/Cu] multilayers T Valet, JC Jacquet, P Galtier, JM Coutellier, LG Pereira, R Morel, D Lottis, ... Applied physics letters 61 (26), 3187-3189, 1992 | 36 | 1992 |
| A new nonlinear HEMT model for AlGaN/GaN switch applications G Callet, J Faraj, O Jardel, C Charbonniaud, JC Jacquet, T Reveyrand, ... International journal of microwave and wireless technologies 2 (3-4), 283-291, 2010 | 35 | 2010 |
| Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process O Jardel, G Callet, J Dufraisse, M Piazza, N Sarazin, E Chartier, M Oualli, ... International Journal of Microwave and Wireless Technologies 3 (3), 301-309, 2011 | 34 | 2011 |
| Magnetic Ultrathin Films, Multilayers and Surfaces JC Jacquet, T Valet, E Marinero MRS Symp. Proc. 384 477, 1995 | 34 | 1995 |
| Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance C Potier, A Martin, M Campovecchio, S Laurent, R Quéré, JC Jacquet, ... 2014 44th European Microwave Conference, 1408-1411, 2014 | 30 | 2014 |
| A new nonlinear HEMT model for AlGaN/GaN switch applications O Jardel, G Callet, C Charbonniaud, JC Jacquet, N Sarazin, E Morvan, ... 2009 European Microwave Integrated Circuits Conference (EuMIC), 73-76, 2009 | 30 | 2009 |
| Magnetoresistance in rf‐sputtered (NiFe/Cu/Co/Cu) spin‐valve multilayers D Lottis, A Fert, R Morel, LG Pereira, JC Jacquet, P Galtier, JM Coutellier, ... Journal of applied physics 73 (10), 5515-5517, 1993 | 27 | 1993 |
| Correlation between giant magnetoresistance and the microstructure of [Ni80Fe20/Cu/Co] multilayers T Valet, P Galtier, JC Jacquet, C Mény, P Panissod Journal of magnetism and magnetic materials 121 (1-3), 402-405, 1993 | 26 | 1993 |
| Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters C Potier, JC Jacquet, C Dua, A Martin, M Campovecchio, M Oualli, ... International Journal of Microwave and Wireless Technologies 7 (3-4), 287-296, 2015 | 25 | 2015 |
| 12W/mm with 0.15 µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications S Piotrowicz, O Jardel, E Chartier, R Aubry, L Baczkowski, M Casbon, ... 2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-3, 2014 | 24 | 2014 |
| Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design S Heckmann, R Sommet, JM Nebus, JC Jacquet, D Floriot, P Auxemery, ... IEEE Transactions on Microwave theory and Techniques 50 (12), 2811-2819, 2002 | 21 | 2002 |
