Patrick Fay
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
300-ghz inaln/gan hemts with ingan back barrier
DS Lee, X Gao, S Guo, D Kopp, P Fay, T Palacios
IEEE Electron Device Letters 32 (11), 1525-1527, 2011
AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance
T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing
IEEE Electron Device Letters 29 (7), 661-664, 2008
245-GHz InAlN/GaN HEMTs with oxygen plasma treatment
DS Lee, JW Chung, H Wang, X Gao, S Guo, P Fay, T Palacios
IEEE Electron Device Letters 32 (6), 755-757, 2011
Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V
G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V
R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-mS/mm transconductance
R Wang, P Saunier, X Xing, C Lian, X Gao, S Guo, G Snider, P Fay, ...
IEEE electron device letters 31 (12), 1383-1385, 2010
Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures
J Simon, Z Zhang, K Goodman, H Xing, T Kosel, P Fay, D Jena
Physical review letters 103 (2), 026801, 2009
Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes
JA Bean, B Tiwari, GH Bernstein, P Fay, W Porod
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
210-GHz InAlN/GaN HEMTs with dielectric-free passivation
R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ...
IEEE electron device letters 32 (7), 892-894, 2011
Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned
Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ...
IEEE Electron Device Letters 33 (5), 655-657, 2012
Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18Noise Equivalent Power
Z Zhang, R Rajavel, P Deelman, P Fay
IEEE Microwave and Wireless Components Letters 21 (5), 267-269, 2011
Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design
D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ...
physica status solidi (a) 208 (7), 1511-1516, 2011
Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz
ML Schuette, A Ketterson, B Song, E Beam, TM Chou, M Pilla, HQ Tserng, ...
IEEE Electron Device Letters 34 (6), 741-743, 2013
InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and Ratio Near
G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ...
IEEE electron device letters 33 (6), 782-784, 2012
Breaking the efficiency barrier for ambient microwave power harvesting with heterojunction backward tunnel diodes
CHP Lorenz, S Hemour, W Li, Y Xie, J Gauthier, P Fay, K Wu
IEEE Transactions on Microwave Theory and Techniques 63 (12), 4544-4555, 2015
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
Sb-heterostructure millimeter-wave detectors with reduced capacitance and noise equivalent power
N Su, R Rajavel, P Deelman, JN Schulman, P Fay
IEEE Electron Device Letters 29 (6), 536-539, 2008
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