Mingda Zhu
Mingda Zhu
Finisar Corporation
Verified email at
Cited by
Cited by
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators
B Sensale-Rodriguez, R Yan, S Rafique, M Zhu, W Li, X Liang, ...
Nano letters 12 (9), 4518-4522, 2012
1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon
M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ...
Applied Physics Letters 107 (24), 243501, 2015
1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability
K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ...
IEEE Electron Device Letters 37 (2), 161-164, 2015
Terahertz imaging employing graphene modulator arrays
B Sensale-Rodriguez, S Rafique, R Yan, M Zhu, V Protasenko, D Jena, ...
Optics express 21 (2), 2324-2330, 2013
Efficient terahertz electro-absorption modulation employing graphene plasmonic structures
B Sensale-Rodriguez, R Yan, M Zhu, D Jena, L Liu, H Grace Xing
Applied Physics Letters 101 (26), 261115, 2012
1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy
Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing
IEEE Electron Device Letters 38 (8), 1071-1074, 2017
GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2
K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ...
2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015
High breakdown single-crystal GaN pn diodes by molecular beam epitaxy
M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107 (23), 232101, 2015
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ...
Applied physics letters 104 (19), 193506, 2014
Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts
B Song, M Zhu, Z Hu, M Qi, K Nomoto, X Yan, Y Cao, D Jena, HG Xing
IEEE electron Device letters 37 (1), 16-19, 2015
Strained GaN quantum-well FETs on single crystal bulk AlN substrates
M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ...
Applied Physics Letters 110 (6), 063501, 2017
Development of GaN vertical trench-MOSFET with MBE regrown channel
W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ...
IEEE Transactions on Electron Devices 65 (6), 2558-2564, 2018
Activation of buried p-GaN in MOCVD-regrown vertical structures
W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, J Xie, M Pilla, ...
Applied Physics Letters 113 (6), 062105, 2018
Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs
Z Hu, Y Yue, M Zhu, B Song, S Ganguly, J Bergman, D Jena, HG Xing
Applied Physics Express 7 (3), 031002, 2014
AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz
S Ganguly, B Song, WS Hwang, Z Hu, M Zhu, J Verma, H Xing, D Jena
physica status solidi (c) 11 (3‐4), 887-889, 2014
Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes
M Qi, G Li, V Protasenko, P Zhao, J Verma, B Song, S Ganguly, M Zhu, ...
Applied Physics Letters 106 (4), 041906, 2015
Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases
Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ...
Applied Physics Letters 105 (17), 173508, 2014
Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms
W Li, K Nomoto, A Sundar, K Lee, M Zhu, Z Hu, E Beam, J Xie, M Pilla, ...
Japanese Journal of Applied Physics 58 (SC), SCCD15, 2019
600 V GaN vertical V-trench MOSFET with MBE regrown channel
W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
The system can't perform the operation now. Try again later.
Articles 1–20