Follow
Mengwei Si(司梦维)
Title
Cited by
Cited by
Year
Steep-slope hysteresis-free negative capacitance MoS2 transistors
M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ...
Nature Nanotechnology 13 (1), 24-28, 2017
3972017
Molecular Doping of Multilayer MoS₂ Field-Effect Transistors: Reduction in Sheet and Contact Resistances
Y Du, H Liu, AT Neal, M Si, PD Ye
IEEE Electron Device Letters 34 (10), 1328 - 1330, 2013
2632013
Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers
H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye
ACS Nano 8 (1), 1031-1038, 2014
2622014
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
2562016
One-dimensional van der Waals material tellurium: Raman spectroscopy under strain and magneto-transport
Y Du, G Qiu, Y Wang, M Si, X Xu, W Wu, PD Ye
Nano letters 17 (6), 3965-3973, 2017
2402017
Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye
Nano Letters 13 (6), 2640-2646, 2013
239*2013
A ferroelectric semiconductor field-effect transistor
M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ...
Nature Electronics 2 (12), 580-586, 2019
1922019
Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional Van der Waals Heterostructure
M Si, PY Liao, G Qiu, Y Duan, PD Ye
ACS nano 12 (7), 6700–6705, 2018
1842018
The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
H Liu, AT Neal, M Si, Y Du, PD Ye
IEEE Electron Device Letters 35 (7), 795 - 797, 2014
1832014
A critical review of recent progress on negative capacitance field-effect transistors
MA Alam, M Si, PD Ye
Applied Physics Letters 114 (9), 090401, 2019
1442019
Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing
H Zhou, S Alghmadi, M Si, G Qiu, DY Peide
IEEE Electron Device Letters 37 (11), 1411-1414, 2016
962016
Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor
M Si, C Jiang, W Chung, Y Du, MA Alam, PD Ye
Nano letters 18 (8), 3682–3687, 2018
932018
Performance Potential and Limit of MoS2 Transistors
X Li, L Yang, M Si, S Li, M Huang, P Ye, Y Wu
Advanced Materials 27 (9), 1547-1552, 2015
912015
Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes
JK Qin, PY Liao, M Si, S Gao, G Qiu, J Jian, Q Wang, SQ Zhang, S Huang, ...
Nature electronics 3 (3), 141-147, 2020
832020
Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs
SH Shin, MA Wahab, M Masuduzzaman, K Maize, J Gu, M Si, A Shakouri, ...
IEEE Transactions on Electron Devices 62 (11), 3516-3523, 2015
772015
Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide
M Si, X Lyu, PR Shrestha, X Sun, H Wang, KP Cheung, PD Ye
Applied Physics Letters 115 (7), 072107, 2019
612019
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors
M Si, Y Hu, Z Lin, X Sun, A Charnas, D Zheng, X Lyu, H Wang, K Cho, ...
Nano Letters 21 (1), 500-506, 2020
602020
Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack
M Si, X Lyu, PD Ye
ACS Appl. Electron. Mater. 1 (5), 745-751, 2019
592019
Hysteresis-free negative capacitance germanium CMOS FinFETs with bi-directional sub-60 mV/dec
W Chung, M Si, DY Peide
2017 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2017
552017
Sub-60 mV/dec ferroelectric HZO MoS2negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance
M Si, C Jiang, CJ Su, YT Tang, L Yang, W Chung, MA Alam, PD Ye
2017 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2017
492017
The system can't perform the operation now. Try again later.
Articles 1–20