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V.P. Markevich
V.P. Markevich
Verified email at manchester.ac.uk
Title
Cited by
Cited by
Year
Experimental evidence of the oxygen dimer in silicon
LI Murin, T Hallberg, VP Markevich, JL Lindström
Physical review letters 80 (1), 93, 1998
1671998
Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
VP Markevich, ID Hawkins, AR Peaker, KV Emtsev, VV Emtsev, ...
Physical Review B—Condensed Matter and Materials Physics 70 (23), 235213, 2004
1472004
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
AR Peaker, VP Markevich, J Coutinho
Journal of Applied Physics 123 (16), 2018
1202018
Hydrogen–oxygen interaction in silicon at around 50 C
VP Markevich, M Suezawa
Journal of applied physics 83 (6), 2988-2993, 1998
1141998
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)–Rapid Research Letters 10 (6), 443-447, 2016
1092016
I6nterstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si
J Coutinho, R Jones, PR Briddon, S Öberg, LI Murin, VP Markevich, ...
Physical Review B 65 (1), 014109, 2001
1032001
Defect engineering in Czochralski silicon by electron irradiation at different temperatures
JL Lindström, LI Murin, T Hallberg, VP Markevich, BG Svensson, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
982002
Electronic properties of antimony-vacancy complex in Ge crystals
VP Markevich, AR Peaker, VV Litvinov, VV Emtsev, LI Murin
Journal of Applied Physics 95 (8), 4078-4083, 2004
922004
Defect reactions associated with divacancy elimination in silicon
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, JL Lindström
Journal of Physics: Condensed Matter 15 (39), S2779, 2003
922003
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
882016
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ...
Physical Review B—Condensed Matter and Materials Physics 80 (23), 235207, 2009
872009
Electronic properties of vacancy–oxygen complex in Ge crystals
VP Markevich, ID Hawkins, AR Peaker, VV Litvinov, LI Murin, ...
Applied Physics Letters 81 (10), 1821-1823, 2002
782002
Electrical and optical characterization of thermal donors in silicon
YAI Latushko, LF Makarenko, VP Markevich, LI Murin
physica status solidi (a) 93 (2), K181-K184, 1986
651986
The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
LI Murin, EA Tolkacheva, VP Markevich, AR Peaker, B Hamilton, ...
Applied Physics Letters 98 (18), 2011
622011
Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films
AY Liu, C Sun, VP Markevich, AR Peaker, JD Murphy, D MacDonald
Journal of Applied Physics 120 (19), 2016
602016
Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon
JL Lindström, LI Murin, VP Markevich, T Hallberg, BG Svensson
Physica B: Condensed Matter 273, 291-295, 1999
591999
Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells
M Vaqueiro-Contreras, VP Markevich, J Coutinho, P Santos, IF Crowe, ...
Journal of Applied Physics 125 (18), 2019
572019
Graphene oxide films for field effect surface passivation of silicon for solar cells
M Vaqueiro-Contreras, C Bartlam, RS Bonilla, VP Markevich, MP Halsall, ...
Solar Energy Materials and Solar Cells 187, 189-193, 2018
562018
The VO2* defect in silicon
JL Lindström, LI Murin, BG Svensson, VP Markevich, T Hallberg
Physica B: Condensed Matter 340, 509-513, 2003
562003
Radiation‐induced shallow donors in Czochralski‐grown silicon crystals saturated with hydrogen
VP Markevich, M Suezawa, K Sumino, LI Murin
Journal of applied physics 76 (11), 7347-7350, 1994
551994
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