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Chuan Xu
Chuan Xu
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Cited by
Cited by
Year
Carbon nanomaterials for next-generation interconnects and passives: physics, status, and prospects
H Li, C Xu, N Srivastava, K Banerjee
IEEE transactions on electron devices 56 (9), 1799-1821, 2009
5162009
Modeling, analysis, and design of graphene nano-ribbon interconnects
C Xu, H Li, K Banerjee
IEEE transactions on electron devices 56 (8), 1567-1578, 2009
3982009
Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition
W Liu, H Li, C Xu, Y Khatami, K Banerjee
Carbon 49 (13), 4122-4130, 2011
3712011
Compact AC modeling and performance analysis of through-silicon vias in 3-D ICs
C Xu, H Li, R Suaya, K Banerjee
Electron Devices, IEEE Transactions on 57 (12), 3405-3417, 2010
2952010
Carbon nanomaterials: The ideal interconnect technology for next-generation ICs
H Li, C Xu, K Banerjee
Design & Test of Computers, IEEE 27 (4), 20-31, 2010
1082010
High-frequency behavior of graphene-based interconnects—Part I: Impedance modeling
D Sarkar, C Xu, H Li, K Banerjee
IEEE Transactions on Electron Devices 58 (3), 843-852, 2011
752011
Metal-to-multilayer-graphene contact—Part I: Contact resistance modeling
Y Khatami, H Li, C Xu, K Banerjee
IEEE Transactions on Electron Devices 59 (9), 2444-2452, 2012
732012
Graphene nano-ribbon (GNR) interconnects: A genuine contender or a delusive dream?
C Xu, H Li, K Banerjee
2008 IEEE International Electron Devices Meeting, 1-4, 2008
732008
Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability
C Xu, SK Kolluri, K Endo, K Banerjee
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2013
632013
High-frequency behavior of graphene-based interconnects—Part II: Impedance analysis and implications for inductor design
D Sarkar, C Xu, H Li, K Banerjee
IEEE Transactions on Electron Devices 58 (3), 853-859, 2011
602011
Compact AC modeling and analysis of Cu, W, and CNT based through-silicon vias (TSVs) in 3-D ICs
C Xu, H Li, R Suaya, K Banerjee
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
602009
The leakage current of the Schottky contact on the mesa edge of AlGaN/GaN heterostructure
C Xu, J Wang, H Chen, F Xu, Z Dong, Y Hao, CP Wen
IEEE Electron Device Letters 28 (11), 942-944, 2007
452007
Compact modeling and analysis of through-Si-via-induced electrical noise coupling in three-dimensional ICs
C Xu, R Suaya, K Banerjee
IEEE Transactions on Electron Devices 58 (11), 4024-4034, 2011
422011
Metal-to-multilayer-graphene contact—Part II: Analysis of contact resistance
Y Khatami, H Li, C Xu, K Banerjee
IEEE Transactions on Electron Devices 59 (9), 2453-2460, 2012
372012
A fully analytical model for the series impedance of through-silicon vias with consideration of substrate effects and coupling with horizontal interconnects
C Xu, V Kourkoulos, R Suaya, K Banerjee
IEEE Transactions on Electron Devices 58 (10), 3529-3540, 2011
332011
Fast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologies
C Xu, L Jiang, SK Kolluri, BJ Rubin, A Deutsch, H Smith, K Banerjee
Proceedings of the 2009 International Conference on Computer-Aided Design …, 2009
302009
Reeves’s circular transmission line model and its scope of application to extract specific contact resistance
C Xu, J Wang, M Wang, H Jin, Y Hao, CP Wen
Solid-state electronics 50 (5), 843-847, 2006
302006
Compact modeling and analysis of coupling noise induced by through-Si-vias in 3-D ICs
C Xu, R Suaya, K Banerjee
2010 International Electron Devices Meeting, 8.1. 1-8.1. 4, 2010
172010
Graphene based heterostructure tunnel-FETs for low-voltage/high-performance ICs
Y Khatami, M Krall, H Li, C Xu, K Banerjee
68th Device Research Conference, 65-66, 2010
172010
A thermal simulation process based on electrical modeling for complex interconnect, packaging, and 3DI structures
L Jiang, C Xu, BJ Rubin, AJ Weger, A Deutsch, H Smith, A Caron, ...
IEEE Transactions on Advanced Packaging 33 (4), 777-786, 2010
142010
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Articles 1–20