Udayan Ganguly

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Sandip LashkareAssistant Professor, IIT GandhinagarVerified email at iitgn.ac.in
Saurabh LodhaProfessor, Electrical Engineering, IIT BombayVerified email at ee.iitb.ac.in
Pankaj KumbhareYield Engineering Systems, Bengaluru, IndiaVerified email at yieldengineering.com
Sushant MittalComputational Process, Lam ResearchVerified email at lamresearch.com
Tuo-Hung (Alex) HouInstitute of Electronics; National Yang Ming Chiao Tung UniversityVerified email at nycu.edu.tw
Aneesh NainaniStanford Univeristy, Applied MaterialsVerified email at stanford.edu
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)Verified email at ee.iitb.ac.in
Bipin RajendranProfessor of Intelligent Computing Systems at King's College LondonVerified email at kcl.ac.uk
Raju MandapatiResearch Scholar, IIT BombayVerified email at iitb.ac.in
Sandhya ChandrashekharGoogleVerified email at ee.iitb.ac.in
Indranil ChakrabortyHardware Engineer, GoogleVerified email at google.com
Ravi Kesh MishraIndian Institute of Science, BangaloreVerified email at iisc.ac.in
Apurba LahaProfessor, Department of Electrical Engineering, Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
Saurabh ChopraApplied MaterialsVerified email at amat.com
Shashank GuptaLightmatterVerified email at lightmatter.co
Sanchit DeshmukhPhD, Stanford UniversityVerified email at alumni.stanford.edu
BHASKAR DASPhD student, IIT BombayVerified email at iitb.ac.in
Ravi Chandra Raju. NagiriSenior Process Development Engineer, The University of Queensland AustraliaVerified email at uq.edu.au
Punyashloka DebashisComponents Research, Intel Corp.Verified email at intel.com
Pawan Kishore SinghCypress SemiconductorVerified email at cypress.com

Udayan Ganguly

Professor, Electrical Engineering, IIT Bombay

Verified email at ee.iitb.ac.in - Homepage

Non-Volatile Memory RRAM Transistors Variability Neuromorphic Engineering


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Apparatus and Methods for Cyclical Oxidation and Etching U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ... US Patent App. 12/720,957, 2011	695	2011
Apparatus and Methods for Cyclical Oxidation and Etching U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ... US Patent App. 12/720,942, 2011	210	2011
Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof U Ganguly, Y Yokota, J Tang, S Thirupapuliyur, CS Olsen, S Sun, ... US Patent 8,871,645, 2014	199	2014
Leaky integrate and fire neuron by charge-discharge dynamics in floating-body MOSFET S Dutta, V Kumar, A Shukla, NR Mohapatra, U Ganguly Scientific reports 7 (1), 8257, 2017	191	2017
Apparatus and methods for cyclical oxidation and etching U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ...	189	2011
Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer P Paramahans Manik, R Kesh Mishra, V Pavan Kishore, P Ray, A Nainani, ... Applied Physics Letters 101 (18), 2012	136	2012
PCMO RRAM for integrate-and-fire neuron in spiking neural networks S Lashkare, S Chouhan, T Chavan, A Bhat, P Kumbhare, U Ganguly IEEE Electron Device Letters 39 (4), 484-487, 2018	125	2018
Punchthrough-diode-based bipolar RRAM selector by Si epitaxy VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ... IEEE Electron Device Letters 33 (10), 1396-1398, 2012	111	2012
Design optimization of metal nanocrystal memory—Part I: Nanocrystal array engineering TH Hou, C Lee, V Narayanan, U Ganguly, EC Kan IEEE transactions on electron devices 53 (12), 3095-3102, 2006	92	2006
Nanotube-and nanocrystal-based non-volatile memory Y Zhang, U Ganguly, E Kan US Patent 7,262,991, 2007	69	2007
Arbitrary spike time dependent plasticity (STDP) in memristor by analog waveform engineering N Panwar, B Rajendran, U Ganguly IEEE Electron Device Letters 38 (6), 740-743, 2017	68	2017
Asymmetric electric field enhancement in nanocrystal memories C Lee, U Ganguly, V Narayanan, TH Hou, J Kim, EC Kan IEEE electron device letters 26 (12), 879-881, 2005	56	2005
Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals U Ganguly, EC Kan, Y Zhang Applied Physics Letters 87 (4), 2005	55	2005
PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly IEEE Electron Device Letters 38 (9), 1212-1215, 2017	50	2017
Band gap bowing and band offsets in relaxed and strained Si1− xGex alloys by employing a new nonlinear interpolation scheme S Sant, S Lodha, U Ganguly, S Mahapatra, FO Heinz, L Smith, V Moroz, ... Journal of Applied Physics 113 (3), 2013	46	2013
Threshold voltage variability in nanosheet GAA transistors PH Vardhan, S Ganguly, U Ganguly IEEE Transactions on Electron Devices 66 (10), 4433-4438, 2019	45	2019
Modification of charge trap silicon nitride with oxygen plasma CS Olsen, TW Poon, U Ganguly, J Swenberg US Patent 8,198,671, 2012	40	2012
Design optimization of metal nanocrystal memory—Part II: Gate-stack engineering TH Hou, C Lee, V Narayanan, U Ganguly, EC Kan IEEE transactions on electron devices 53 (12), 3103-3109, 2006	38	2006
Band-to-band tunneling based ultra-energy-efficient silicon neuron T Chavan, S Dutta, NR Mohapatra, U Ganguly IEEE Transactions on Electron Devices 67 (6), 2614-2620, 2020	37	2020
Ultra-low energy LIF neuron using Si NIPIN diode for spiking neural networks B Das, J Schulze, U Ganguly IEEE Electron Device Letters 39 (12), 1832-1835, 2018	37	2018

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