| Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation C De Santi, M Fregolent, M Buffolo, MH Wong, M Higashiwaki, ... Applied Physics Letters 117 (26), 2020 | 26 | 2020 |
| Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy M Fregolent, M Buffolo, C De Santi, S Hasegawa, J Matsumura, ... Journal of Physics D: Applied Physics 54 (34), 345109, 2021 | 15 | 2021 |
| Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations N Roccato, F Piva, C De Santi, M Buffolo, M Fregolent, M Pilati, N Susilo, ... Applied Physics Letters 122 (16), 2023 | 13 | 2023 |
| Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling M Fregolent, E Brusaterra, C De Santi, K Tetzner, J Würfl, G Meneghesso, ... Applied Physics Letters 120 (16), 2022 | 12 | 2022 |
| Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs N Modolo, M Fregolent, F Masin, A Benato, A Bettini, M Buffolo, ... Microelectronics Reliability 138, 114708, 2022 | 8 | 2022 |
| Review on the degradation of GaN-based lateral power transistors C De Santi, M Buffolo, I Rossetto, T Bordignon, E Brusaterra, A Caria, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 1, 100018, 2021 | 7 | 2021 |
| Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes M Fregolent, C De Santi, M Buffolo, M Higashiwaki, G Meneghesso, ... Journal of Applied Physics 130 (24), 2021 | 4 | 2021 |
| Trapping in MOScaps investigated by fast capacitive techniques M Fregolent, A Marcuzzi, C De Santi, EB Treidel, G Meneghesso, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023 | 3 | 2023 |
| Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs M Fregolent, E Brusaterra, C De Santi, K Tetzner, J Würfl, G Meneghesso, ... Oxide-based Materials and Devices XIII 12002, 40-45, 2022 | 3 | 2022 |
| Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate M Fregolent, A Del Fiol, C De Santi, C Huber, G Meneghesso, E Zanoni, ... Microelectronics Reliability 150, 115130, 2023 | 2 | 2023 |
| Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD N Zagni, M Fregolent, A Del Fiol, D Favero, F Bergamin, G Verzellesi, ... Journal of Semiconductors 45 (3), 032501-1-032501-8, 2024 | 1 | 2024 |
| Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric M Fregolent, E Brusaterra, C De Santi, K Tetzner, J Würfl, G Meneghesso, ... Applied Physics Letters 123 (10), 2023 | 1 | 2023 |
| Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack C De Santi, M Fregolent, E Brusaterra, K Tetzner, J Würfl, M Buffolo, ... Oxide-based Materials and Devices XV 12887, 57-60, 2024 | | 2024 |
| Gallium Oxide and Gallium Nitride-based devices for high-power applications: characterization, reliability, and modelling M Fregolent Università degli studi di Padova, 2024 | | 2024 |
| Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical AlO/GaN MOS Capacitors N Zagni, M Fregolent, G Verzellesi, A Marcuzzi, C De Santi, ... IEEE Transactions on Electron Devices, 2023 | | 2023 |
| GaN Vertical Devices: challenges for high performance and stability M Meneghini, M Fregolent, N Zagni, C DE SANTI, EB Treidel, ... Proceedings of ICNS-14 conference, 2023 | | 2023 |
| Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD N Zagni, M Fregolent, A Del Fiol, D Favero, F Bergamin, G Verzellesi, ... Journal of Semiconductors 45, -1--8, 2023 | | 2023 |
| Novel models for the analysis of the dynamic performance of wide bandgap devices C DE SANTI, M Fregolent, N Modolo, M Buffolo, F Rampazzo, ... Proceedings of the 37th Reliability of Compound Semiconductors Workshop …, 2023 | | 2023 |
| Isolation properties and failure mechanisms of vertical Pt/n-GaN SBDs M Fregolent, M Boito, A Marcuzzi, C De Santi, F Chiocchetta, EB Treidel, ... Microelectronics Reliability 138, 114644, 2022 | | 2022 |
| Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes C De Santi, M Fregolent, M Buffolo, M Higashiwaki, G Meneghesso, ... Oxide-based Materials and Devices XIII 12002, 60-65, 2022 | | 2022 |
Carlo De SantiAssistant professor, UNIPDVerified email at unipd.it
