sylvain bollaert
sylvain bollaert
Iemn université Lille 1
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Cited by
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Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
W Knap, J Lusakowski, T Parenty, S Bollaert, A Cappy, VV Popov, ...
Applied Physics Letters 84 (13), 2331-2333, 2004
Resonant and voltage-tunable terahertz detection in nanometer transistors
A El Fatimy, F Teppe, N Dyakonova, W Knap, D Seliuta, G Valušis, ...
Applied physics letters 89 (13), 131926, 2006
Room-temperature terahertz emission from nanometer field-effect transistors
N Dyakonova, A El Fatimy, J Łusakowski, W Knap, MI Dyakonov, ...
Applied physics letters 88 (14), 141906, 2006
Voltage tuneable terahertz emission from a ballistic nanometer transistor
J Lusakowski, W Knap, N Dyakonova, L Varani, J Mateos, T Gonzalez, ...
Journal of applied physics 97 (6), 064307, 2005
Microscopic modeling of nonlinear transport in ballistic nanodevices
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, S Bollaert, ...
IEEE Transactions on Electron Devices 50 (9), 1897-1905, 2003
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ...
Nanotechnology 14 (2), 117, 2003
Imaging and controlling electron transport inside a quantum ring
B Hackens, F Martins, T Ouisse, H Sellier, S Bollaert, X Wallart, A Cappy, ...
Nature Physics 2 (12), 826-830, 2006
Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors
F Teppe, M Orlov, A El Fatimy, A Tiberj, W Knap, J Torres, V Gavrilenko, ...
Applied Physics Letters 89 (22), 222109, 2006
Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
N Dyakonova, F Teppe, J Łusakowski, W Knap, M Levinshtein, ...
Journal of applied physics 97 (11), 114313, 2005
Imaging electron wave functions inside open quantum rings
F Martins, B Hackens, MG Pala, T Ouisse, H Sellier, X Wallart, S Bollaert, ...
Physical review letters 99 (13), 136807, 2007
Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs
BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ...
IEEE Transactions on Electron Devices 54 (11), 2815-2822, 2007
Metamorphic In_< 0.4> Al_< 0.6> As/In_< 0.4> Ga_< 0.6> As HEMTs on GaAs substrate
S Bollaert
IEEE Electron Device Lett. 20, 123-125, 1999
Current driven resonant plasma wave detection of terahertz radiation: Toward the Dyakonov–Shur instability
S Boubanga-Tombet, F Teppe, D Coquillat, S Nadar, N Dyakonova, ...
Applied Physics Letters 92 (21), 212101, 2008
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations
I Iñiguez-De-La-Torre, J Mateos, T González, D Pardo, JS Galloo, ...
Semiconductor science and technology 22 (6), 663, 2007
Nonlinear effects in T-branch junctions
J Mateos, BG Vasallo, D Pardo, T González, E Pichonat, JS Galloo, ...
IEEE Electron Device Letters 25 (5), 235-237, 2004
Oblique modes effect on terahertz plasma wave resonant detection in multichannel transistors
A Shchepetov, C Gardès, Y Roelens, A Cappy, S Bollaert, ...
Applied Physics Letters 92 (24), 242105, 2008
Dwell-time-limited coherence in open quantum dots
B Hackens, S Faniel, C Gustin, X Wallart, S Bollaert, A Cappy, V Bayot
Physical review letters 94 (14), 146802, 2005
The indium content in metamorphic InxAl1− xAs/InxGa1− xAs HEMTs on GaAs substrate: a new structure parameter
S Bollaert, Y Cordier, M Zaknoune, H Happy, V Hoel, S Lepilliet, D Théron, ...
Solid-State Electronics 44 (6), 1021-1027, 2000
InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: influence of indium content on material properties and device performance
Y Cordier, S Bollaert, M Zaknoune, J Dipersio, D Ferre
Japanese journal of applied physics 38 (2S), 1164, 1999
InAlAs-InGaAs double-gate HEMTs on transferred substrate
N Wichmann, I Duszynski, X Wallart, S Bollaert, A Cappy
IEEE Electron Device Letters 25 (6), 354-356, 2004
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