| “Leaky Dielectric” Model for the Suppression of Dynamic in Carbon-Doped AlGaN/GaN HEMTs MJ Uren, S Karboyan, I Chatterjee, A Pooth, P Moens, A Banerjee, ... IEEE Transactions on Electron Devices 64 (7), 2826-2834, 2017 | 218 | 2017 |
| Impact of technology scaling on SRAM soft error rates I Chatterjee, B Narasimham, NN Mahatme, BL Bhuva, RA Reed, ... IEEE Transactions on Nuclear Science 61 (6), 3512-3518, 2014 | 95 | 2014 |
| Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs P Moens, A Banerjee, MJ Uren, M Meneghini, S Karboyan, I Chatterjee, ... 2015 IEEE International Electron Devices Meeting (IEDM), 35.2.1 - 35.2.4, 2015 | 92 | 2015 |
| Geometry dependence of total-dose effects in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ... IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014 | 78 | 2014 |
| Impact of technology scaling on the combinational logic soft error rate NN Mahatme, NJ Gaspard, T Assis, S Jagannathan, I Chatterjee, ... 2014 IEEE international reliability physics symposium, 5F. 2.1-5F. 2.6, 2014 | 69 | 2014 |
| Bias dependence of total-dose effects in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, MA Alles, RD Schrimpf, DM Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4476-4482, 2013 | 53 | 2013 |
| Single-event charge collection and upset in 40-nm dual-and triple-well bulk CMOS SRAMs I Chatterjee, B Narasimham, NN Mahatme, BL Bhuva, RD Schrimpf, ... IEEE Transactions on Nuclear Science 58 (6), 2761-2767, 2011 | 50 | 2011 |
| Analysis of soft error rates in combinational and sequential logic and implications of hardening for advanced technologies NN Mahatme, I Chatterjee, BL Bhuva, J Ahlbin, LW Massengill, R Shuler 2010 IEEE International Reliability Physics Symposium, 1031-1035, 2010 | 49 | 2010 |
| Bias dependence of single-event upsets in 16 nm FinFET D-flip-flops B Narasimham, S Hatami, A Anvar, DM Harris, A Lin, JK Wang, ... IEEE Transactions on Nuclear Science 62 (6), 2578-2584, 2015 | 47 | 2015 |
| Lateral charge transport in the carbon-doped buffer in AlGaN/GaN-on-Si HEMTs I Chatterjee, MJ Uren, S Karboyan, A Pooth, P Moens, A Banerjee, ... IEEE Transactions on Electron Devices 64 (3), 977-983, 2017 | 42 | 2017 |
| Multi-cell soft errors at advanced technology nodes BL Bhuva, N Tam, LW Massengill, D Ball, I Chatterjee, M McCurdy, ... IEEE Transactions on Nuclear Science 62 (6), 2585-2591, 2015 | 42 | 2015 |
| (Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective P Moens, A Banerjee, A Constant, P Coppens, M Caesar, Z Li, ... ECS Transactions 72 (4), 65-76, 2016 | 24 | 2016 |
| Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, DM Fleetwood, YP Fang, A Oates Reliability Physics Symposium (IRPS), 2013 IEEE International, SE.8.1 - SE.8.6, 2013 | 22 | 2013 |
| Multi-cell soft errors at the 16-nm FinFET technology node N Tam, BL Bhuva, LW Massengill, D Ball, M McCurdy, ML Alles, ... 2015 IEEE International Reliability Physics Symposium, 4B. 3.1-4B. 3.5, 2015 | 19 | 2015 |
| An efficient technique to select logic nodes for single event transient pulse-width reduction NN Mahatme, I Chatterjee, A Patki, DB Limbrick, BL Bhuva, RD Schrimpf, ... Microelectronics Reliability 53 (1), 114-117, 2013 | 13 | 2013 |
| Effects of total-ionizing-dose irradiation on single-event response for flip-flop designs at a 14-/16-nm bulk FinFET technology node H Zhang, H Jiang, X Fan, JS Kauppila, I Chatterjee, BL Bhuva, ... IEEE Transactions on Nuclear Science 65 (8), 1928-1934, 2017 | 11 | 2017 |
| Influence of supply voltage on the multi-cell upset soft error sensitivity of dual-and triple-well 28 nm CMOS SRAMs B Narasimham, JK Wang, N Vedula, S Gupta, B Bartz, C Monzel, ... 2015 IEEE International Reliability Physics Symposium, 2C. 4.1-2C. 4.5, 2015 | 11 | 2015 |
| Kernel-based circuit partition approach to mitigate combinational logic soft errors NN Mahatme, NJ Gaspard, T Assis, I Chatterjee, TD Loveless, BL Bhuva, ... IEEE Transactions on Nuclear Science 61 (6), 3274-3281, 2014 | 9 | 2014 |
| Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs. S Karboyan, MJ Uren, S Martin Horcajo, JW Pomeroy, I Chatterjee, ... International Conference on Compound Semiconductor Manufacturing Technology …, 2016 | 8 | 2016 |
| Effects of charge confinement and angular strikes in 40 nm dual-and triple-well bulk CMOS SRAMs I Chatterjee, BL Bhuva, RD Schrimpf, B Narasimham, JK Wang, B Bartz, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 5B. 3.1-5B. 3.7, 2012 | 8 | 2012 |
Bharat BhuvaVanderbilt UniversityVerified email at vanderbilt.edu
