| Modeling of the lateral emitter-current crowding effect in SiGe HBTs S Yadav, A Chakravorty, M Schroter IEEE Transactions on Electron Devices 63 (11), 4160-4166, 2016 | 12 | 2016 |
| A pragmatic approach to modeling self-heating effects in SiGe HBTs S Yadav, A Chakravorty IEEE Transactions on Electron Devices 64 (12), 4844-4849, 2017 | 9 | 2017 |
| Demonstration and modelling of excellent RF switch performance of 22nm FD-SOI technology for millimeter-wave applications S Yadav, A Bellaouar, JS Wong, T Chen, S Sekine, C Schwan, MS Chin, ... ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 8 | 2019 |
| Small-signal modeling of the lateral NQS effect in SiGe HBTs S Yadav, A Chakravorty, M Schröter 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 203-206, 2014 | 8 | 2014 |
| ESD HBM discharge model in RF GaN-on-Si (MIS) HEMTs WM Wu, SH Chen, A Sibaja-Hernandez, S Yadav, U Peralagu, H Yu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2021 | 6 | 2021 |
| An efficient thermal model for multifinger SiGe HBTs under real operating condition K Nidhin, S Pande, S Yadav, S Balanethiram, DR Nair, S Fregonese, ... IEEE Transactions on Electron Devices 67 (11), 5069-5075, 2020 | 4 | 2020 |
| Static thermal coupling factors in multi-finger bipolar transistors: Part I—model development A Gupta, K Nidhin, S Balanethiram, S Yadav, A Chakravorty, S Fregonese, ... Electronics 9 (9), 1333, 2020 | 4 | 2020 |
| Static thermal coupling factors in multi-finger bipolar transistors: Part II-experimental validation A Gupta, K Nidhin, S Balanethiram, S Yadav, A Chakravorty, S Fregonese, ... Electronics 9 (9), 1365, 2020 | 3 | 2020 |
| Hybrid small-signal π-model for the lateral NQS effect in SiGe HBTs S Yadav, A Chakravorty, M Schroter 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 154-157, 2016 | 2 | 2016 |
| Optimizing Finger Spacing in Multifinger Bipolar Transistors for Minimal Electrothermal Coupling A Gupta, K Nidhin, S Balanethiram, S Yadav, S Fregonese, T Zimmer, ... IEEE Transactions on Electron Devices 69 (12), 6535-6540, 2022 | 1 | 2022 |
| Modeling dynamic lateral current crowding in SiGe HBTs S Ghosh, S Yadav, A Chakravorty 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022 | 1 | 2022 |
| Compact 2-RC Model for Lateral NQS Effects in SiGe HBTs S Ghosh, S Yadav, A Chakravorty 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022 | | 2022 |
| III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance A Vais, S Yadav, Y Mols, B Vermeersch, KV Kodandarama, ... ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | | 2022 |
| Substrate effects in GaN-on-Si HEMT technology for RF FEM applications S Yadav, P Cardinael, M Zhao, K Vondkar, U Peralagu, A Alian, ... GaN 60 (40), 20, 2022 | | 2022 |
| Transistor modelling for mm-Wave technology pathfinding B Parvais, R ElKashlan, H Yu, A Sibaja-Hernandez, B Vermeersch, ... 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | | 2021 |
| GaN on Si: substrate RF modelling P Cardinael, S Yadav, M Zhao, K Vondkar, A Khaled, R Rodriguez, ... IMEC Partner Technical Week–PTW’20, 2020 | | 2020 |
| Hybrid two-section model for the small-signal current crowding effect in SiGe HBTs S Yadav, A Chakravorty IEEE International Conference on Emerging Electronics (ICEE), 2016 | | 2016 |
| Analysis and implementation of the π- and extended π-EC models for lateral NQS effect in SiGe HBTs S Yadav, A Chakravorty International Workshop on Physics of Semiconductor Devices (IWPSD), 2015 | | 2015 |
