| Why is nonvolatile ferroelectric memory field-effect transistor still elusive? TP Ma, JP Han IEEE Electron Device Letters 23 (7), 386-388, 2002 | 552 | 2002 |
| Ferroelectric field effect transistors for memory applications J Hoffman, X Pan, JW Reiner, FJ Walker, JP Han, CH Ahn, TP Ma Advanced materials 22 (26‐27), 2957-2961, 2010 | 308 | 2010 |
| Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics W Zhu, JP Han, TP Ma IEEE Transactions on Electron Devices 51 (1), 98-105, 2004 | 299 | 2004 |
| NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning S Kim, M Ishii, S Lewis, T Perri, M BrightSky, W Kim, R Jordan, GW Burr, ... 2015 IEEE international electron devices meeting (IEDM), 17.1. 1-17.1. 4, 2015 | 195 | 2015 |
| Electrode dependence of hydrogen-induced degradation in ferroelectric and thin films JP Han, TP Ma Applied physics letters 71 (9), 1267-1269, 1997 | 182 | 1997 |
| A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process X Chen, S Samavedam, V Narayanan, K Stein, C Hobbs, C Baiocco, W Li, ... 2008 symposium on vlsi technology, 88-89, 2008 | 130 | 2008 |
| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011 | 129 | 2011 |
| memory capacitor on Si with a silicon nitride buffer JP Han, TP Ma Applied physics letters 72 (10), 1185-1186, 1998 | 123 | 1998 |
| Ferroelectric dynamic random access memory TP Ma, JP Han US Patent 6,067,244, 2000 | 120 | 2000 |
| High inversion current in silicon nanowire field effect transistors SM Koo, A Fujiwara, JP Han, EM Vogel, CA Richter, JE Bonevich Nano Letters 4 (11), 2197-2201, 2004 | 116 | 2004 |
| Ferroelectric DRAM (FEDRAM) FET with metal/SrBi2Ta2O/sub 9//SiN/Si gate structure KH Kim, JP Han, SW Jung, TP Ma IEEE Electron Device Letters 23 (2), 82-84, 2002 | 89 | 2002 |
| Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications L Manchanda, ML Green, RB Van Dover, MD Morris, A Kerber, Y Hu, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 84 | 2000 |
| Competitive and cost effective high-k based 28nm CMOS technology for low power applications F Arnaud, A Thean, M Eller, M Lipinski, YW Teh, M Ostermayr, K Kang, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 67 | 2009 |
| Fabrication of 50–100 nm patterned InGaN blue light emitting heterostructures L Chen, A Yin, JS Im, AV Nurmikko, JM Xu, J Han physica status solidi (a) 188 (1), 135-138, 2001 | 64 | 2001 |
| Transistor mismatch properties in deep-submicrometer CMOS technologies X Yuan, T Shimizu, U Mahalingam, JS Brown, KZ Habib, DG Tekleab, ... IEEE Transactions on Electron Devices 58 (2), 335-342, 2011 | 57 | 2011 |
| Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ... 2019 Symposium on VLSI Technology, T66-T67, 2019 | 56 | 2019 |
| Asymmetric energy distribution of interface traps in n-and p-MOSFETs with HfO/sub 2/gate dielectricon ultrathin SiON buffer layer JP Han, EM Vogel, EP Gusev, C D'Emic, CA Richter, DW Heh, JS Suehle IEEE Electron Device Letters 25 (3), 126-128, 2004 | 46 | 2004 |
| Biodiversifying bioinspiration R Müller, N Abaid, JB Boreyko, C Fowlkes, AK Goel, C Grimm, S Jung, ... Bioinspiration & Biomimetics 13 (5), 053001, 2018 | 41 | 2018 |
| JVD silicon nitride as tunnel dielectric in p-channel flash memory M She, TJ King, C Hu, W Zhu, Z Luo, JP Han, TP Ma IEEE Electron Device Letters 23 (2), 91-93, 2002 | 41 | 2002 |
| Methods of fabricating semiconductor devices and structures thereof K Stahrenberg, JP Han US Patent 8,252,649, 2012 | 37 | 2012 |
