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Sergey Ivanov
Sergey Ivanov
Director, Ioffe Institute
Verified email at beam.ioffe.ru - Homepage
Title
Cited by
Cited by
Year
Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
physica status solidi (b) 229 (3), r1-r3, 2002
14182002
Band gap of hexagonal InN and InGaN alloys
VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ...
physica status solidi (b) 234 (3), 787-795, 2002
4462002
Band Gap of InN and In‐Rich InxGa1—xN alloys (0.36 < x < 1)
VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ...
physica status solidi (b) 230 (2), R4-R6, 2002
4372002
Radiative recombination in type‐II GaSb/GaAs quantum dots
F Hatami, NN Ledentsov, M Grundmann, J Böhrer, F Heinrichsdorff, ...
Applied physics letters 67 (5), 656-658, 1995
4131995
Experimental and theoretical studies of phonons in hexagonal InN
VY Davydov, VV Emtsev, IN Goncharuk, AN Smirnov, VD Petrikov, ...
Applied physics letters 75 (21), 3297-3299, 1999
3431999
Physical properties of InN with the band gap energy of 1.1 eV
T Inushima, VV Mamutin, VA Vekshin, SV Ivanov, T Sakon, M Motokawa, ...
Journal of crystal growth 227, 481-485, 2001
2882001
Mie resonances, infrared emission, and the band gap of InN
TV Shubina, SV Ivanov, VN Jmerik, DD Solnyshkov, VA Vekshin, ...
Physical Review Letters 92 (11), 117407, 2004
2862004
Radiative states in type-II GaSb/GaAs quantum wells
NN Ledentsov, J Böhrer, M Beer, F Heinrichsdorff, M Grundmann, ...
Physical Review B 52 (19), 14058, 1995
2711995
Structural and chemical analysis of CdSe/ZnSe nanostructures by transmission electron microscopy
N Peranio, A Rosenauer, D Gerthsen, SV Sorokin, IV Sedova, SV Ivanov
Physical Review B 61 (23), 16015, 2000
1592000
Infrared asymptotics of perturbative QCD. Contour gauges
SV Ivanov, GP Korchemskij, AV Radyushkin
Joint Inst. for Nuclear Research, 1985
1571985
Magnetic property investigations on Mn-doped ZnO Layers on sapphire
AC Mofor, A El-Shaer, A Bakin, A Waag, H Ahlers, U Siegner, S Sievers, ...
Applied Physics Letters 87 (6), 2005
1432005
Current oscillation in superlattices with different miniband widths
E Schomburg, T Blomeier, K Hofbeck, J Grenzer, S Brandl, I Lingott, ...
Physical Review B 58 (7), 4035, 1998
1381998
Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix
NN Ledentsov, IL Krestnikov, MV Maximov, SV Ivanov, SL Sorokin, ...
Applied physics letters 69 (10), 1343-1345, 1996
1371996
Growth and excitonic properties of single fractional monolayer CdSe/ZnSe structures
SV Ivanov, AA Toropov, TV Shubina, SV Sorokin, AV Lebedev, IV Sedova, ...
Journal of applied physics 83 (6), 3168-3171, 1998
1361998
High-frequency self-sustained current oscillation in an Esaki-Tsu superlattice monitored via microwave emission
K Hofbeck, J Grenzer, E Schomburg, AA Ignatov, KF Renk, DG Pavel'ev, ...
Physics Letters A 218 (3-6), 349-353, 1996
1271996
Downregulation of SMG-1 in HPV-positive head and neck squamous cell carcinoma due to promoter hypermethylation correlates with improved survival
E Gubanova, B Brown, SV Ivanov, T Helleday, GB Mills, WG Yarbrough, ...
Clinical cancer research 18 (5), 1257-1267, 2012
1222012
Phys. Status Solidi B https://doi. org/10.1002/1521-3951 (200202) 229: 3< R1:: AID-PSSB99991> 3.0. CO; 2-O 229
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
R1, 2002
1192002
CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers
SV Ivanov, AA Toropov, SV Sorokin, TV Shubina, IV Sedova, AA Sitnikova, ...
Applied physics letters 74 (4), 498-500, 1999
1161999
Quasistatic and dynamic interaction of high-frequency fields with miniband electrons in semiconductor superlattices
S Winnerl, E Schomburg, J Grenzer, HJ Regl, AA Ignatov, AD Semenov, ...
Physical Review B 56 (16), 10303, 1997
891997
Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys
SV Ivanov, SV Sorokin, PS Kop'ev, JR Kim, HD Jung, HS Park
Journal of crystal growth 159 (1-4), 16-20, 1996
841996
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