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Dr. Katja Puschkarsky; Dr. Katja Waschneck
Dr. Katja Puschkarsky; Dr. Katja Waschneck
TU Wien, Infineon
Verified email at infineon.com
Title
Cited by
Cited by
Year
Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability
K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger
IEEE Transactions on Electron Devices 66 (11), 4604-4616, 2019
782019
Understanding BTI in SiC MOSFETs and its impact on circuit operation
K Puschkarsky, H Reisinger, T Aichinger, W Gustin, T Grasser
IEEE Transactions on device and materials reliability 18 (2), 144-153, 2018
662018
Investigation of threshold voltage stability of SiC MOSFETs
D Peters, T Aichinger, T Basler, G Rescher, K Puschkarsky, H Reisinger
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
532018
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs
K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger
2018 IEEE International Reliability Physics Symposium (IRPS), 3B. 5-1-3B. 5-10, 2018
332018
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental
B Ullmann, M Jech, K Puschkarsky, GA Rott, M Waltl, Y Illarionov, ...
IEEE Transactions on Electron Devices 66 (1), 232-240, 2018
222018
Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation
K Puschkarsky, H Reisinger, T Aichinger, W Gustin, T Grasser
2017 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2017
222017
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
T Grasser, M Waltl, K Puschkarsky, B Stampfer, G Rzepa, G Pobegen, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 6A-2.1-6A-2.6, 2017
212017
The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects
B Ullmann, M Jech, S Tyaginov, M Waltl, Y Illarionov, A Grill, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-10.1-XT-10.6, 2017
132017
Physical modeling of charge trapping in 4H-SiC DMOSFET technologies
C Schleich, D Waldhoer, K Waschneck, MW Feil, H Reisinger, T Grasser, ...
IEEE Transactions on Electron Devices 68 (8), 4016-4021, 2021
122021
Evaluation of advanced MOSFET threshold voltage drift measurement techniques
B Ullmann, K Puschkarsky, M Waltl, H Reisinger, T Grasser
IEEE Transactions on Device and Materials Reliability 19 (2), 358-362, 2019
122019
NBTI degradation and recovery in analog circuits: Accurate and efficient circuit-level modeling
KU Giering, K Puschkarsky, H Reisinger, G Rzepa, G Rott, R Vollertsen, ...
IEEE Transactions on Electron Devices 66 (4), 1662-1668, 2019
122019
Circuit relevant HCS lifetime assessments at single transistors with emulated variable loads
C Schlünder, F Proebster, J Berthold, K Puschkarsky, G Georgakos, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 2D-2.1-2D-2.7, 2017
122017
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
T Grasser, B Stampfer, M Waltl, G Rzepa, K Rupp, F Schanovsky, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 2A. 2-1-2A. 2-10, 2018
112018
An efficient analog compact NBTI model for stress and recovery based on activation energy maps
K Puschkarsky, H Reisinger, GA Rott, C Schluender, W Gustin, T Grasser
IEEE Transactions on Electron Devices 66 (11), 4623-4630, 2019
102019
Voltage-dependent activation energy maps for analytic lifetime modeling of NBTI without time extrapolation
K Puschkarsky, H Reisinger, C Schluender, W Gustin, T Grasser
IEEE Transactions on Electron Devices 65 (11), 4764-4771, 2018
102018
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation
P Salmen, MW Feil, K Waschneck, H Reisinger, G Rescher, T Aichinger
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
82021
On the physical meaning of single-value activation energies for BTI in Si and SiC MOSFET devices
MW Feil, K Puschkarsky, W Gustin, H Reisinger, T Grasser
IEEE Transactions on Electron Devices 68 (1), 236-243, 2020
62020
The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
MW Feil, A Huerner, K Puschkarsky, C Schleich, T Aichinger, W Gustin, ...
Crystals 10 (12), 1143, 2020
52020
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI
K Puschkarsky, H Reisinger, C Schlünder, W Gustin, T Grasser
2018 48th European Solid-State Device Research Conference (ESSDERC), 218-221, 2018
42018
From device aging physics to automated circuit reliability sign off
C Schlünder, K Waschneck, P Rotter, S Lachenmann, H Reisinger, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-12, 2019
32019
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