| Behavioral study of single-event burnout in power devices for natural radiation environment applications M Zerarka, P Austin, G Toulon, F Morancho, H Arbess, J Tasselli IEEE Transactions on Electron Devices 59 (12), 3482-3488, 2012 | 45 | 2012 |
| An IoT-based intelligent system for real-time parking monitoring and automatic billing R Kanan, H Arbess 2020 IEEE International Conference on Informatics, IoT, and Enabling …, 2020 | 24 | 2020 |
| Micro-fabricated RTD based sensor for breathing analysis and monitoring B Neji, N Ferko, R Ghandour, AS Karar, H Arbess Sensors 21 (1), 318, 2021 | 23 | 2021 |
| Combined MOS–IGBT–SCR structure for a compact high-robustness ESD power clamp in smart power SOI technology H Arbess, M Bafleur, D Trémouilles, M Zerarka IEEE Transactions on Device and Materials Reliability 14 (1), 432-440, 2013 | 18 | 2013 |
| Original field plate to decrease the maximum electric field peak for high-voltage diamond Schottky diode H Arbess, K Isoird, S Hamady, M Zerarka, D Planson IEEE Transactions on Electron Devices 62 (9), 2945-2951, 2015 | 17 | 2015 |
| Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors M Zerarka, P Austin, F Morancho, K Isoird, H Arbess, J Tasselli IET Circuits, Devices & Systems 8 (3), 197-204, 2014 | 15 | 2014 |
| High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power SOI technology H Arbess, D Trémouilles, M Bafleur EOS/ESD Symposium Proceedings, 1-8, 2011 | 14 | 2011 |
| Mechanical stress investigation after technological process in Deep Trench Termination DT2 using BenzoCycloButene as dielectric material H Arbess, F Baccar, L Theolier, S Azzopardi, E Woirgard Microelectronics Reliability 55 (9-10), 2017-2021, 2015 | 7 | 2015 |
| Optimization of a MOS–IGBT–SCR ESD protection component in smart power SOI technology H Arbess, M Bafleur, D Trémouilles, M Zerarka Microelectronics Reliability 55 (9-10), 1476-1480, 2015 | 4 | 2015 |
| Transient-TLP (T-TLP): a simple method for accurate ESD protection transient behavior measurement D Trémouilles, A Delmas, N Mauran, N Nolhier, H Arbess, M Bafleur 2013 35th Electrical Overstress/Electrostatic Discharge Symposium, 1-10, 2013 | 4 | 2013 |
| MOS-IGBT power devices for high-temperature operation in smart power SOI technology H Arbess, M Bafleur Microelectronics Reliability 51 (9-11), 1980-1984, 2011 | 4 | 2011 |
| High termination efficiency using polyimide trench for high voltage diamond Schottky diode H Arbess, K Isoird, M Zerarka, H Schneider, ML Locatelli, D Planson Diamond and Related Materials 58, 149-154, 2015 | 3 | 2015 |
| Field plate termination for high voltage diamond Schottky diode H Arbess, K Isoird 2013 25th International Conference on Microelectronics (ICM), 1-4, 2013 | 3 | 2013 |
| Structures MOS-IGBT sur technologie SOI en vue de l'amélioration des performances à haute température de composants de puissance et de protections ESD H Arbess Université Paul Sabatier-Toulouse III, 2012 | 3 | 2012 |
| New simulation method for Deep Trench Termination diode (DT2) using mixed-mode TCAD sentaurus F Baccar, H Arbess, L Theolier, S Azzopardi, E Woirgard 2015 16th International Conference on Thermal, Mechanical and Multi-Physics …, 2015 | 2 | 2015 |
| New termination architecture for 1700 V diamond Schottky diode H Arbess, K Isoird, S Hamady 2013 15th European Conference on Power Electronics and Applications (EPE), 1-8, 2013 | 2 | 2013 |
| Ageing mechanisms in Deep Trench Termination (DT2) Diode F Baccar, H Arbess, L Theolier, S Azzopardi, E Woirgard Microelectronics Reliability 55 (9-10), 1981-1987, 2015 | 1 | 2015 |
| Optimisation de la terminaison d'une diode Schottky diamant haute tension H Arbess, K Isoird, D Planson, LV Phung Symposium de Génie Electrique (SGE'14), 2014 | | 2014 |
| Structures mixtes MOS-IGBT pour l’amélioration de la protection ESD à haute température en technologie SOI H ARBESS | | |
