Michel Houssa
Michel Houssa
Professor, KU Leuven
Verified email at - Homepage
Cited by
Cited by
Buckled two-dimensional Xene sheets
A Molle, J Goldberger, M Houssa, Y Xu, SC Zhang, D Akinwande
Nature materials 16 (2), 163-169, 2017
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
E Scalise, M Houssa, G Pourtois, V Afanas’ ev, A Stesmans
Nano Research 5, 43-48, 2012
Electronic properties of hydrogenated silicene and germanene
M Houssa, E Scalise, K Sankaran, G Pourtois, VV Afanas’Ev, A Stesmans
Applied Physics Letters 98 (22), 2011
Trap-assisted tunneling in high permittivity gate dielectric stacks
M Houssa, M Tuominen, M Naili, V Afanas’ ev, A Stesmans, S Haukka, ...
Journal of Applied Physics 87 (12), 8615-8620, 2000
High k gate dielectrics
M Houssa
CRC Press, 2003
Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface
D Chiappe, E Scalise, E Cinquanta, C Grazianetti, B van den Broek, ...
Advanced Materials 26 (13), 2096-2101, 2014
Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide
A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ...
Applied physics letters 91 (8), 2007
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
Variation in the fixed charge density of gate dielectric stacks during postdeposition oxidation
M Houssa, VV Afanas’ ev, A Stesmans, MM Heyns
Applied Physics Letters 77 (12), 1885-1887, 2000
Can silicon behave like graphene? A first-principles study
M Houssa, G Pourtois, VV Afanas’Ev, A Stesmans
Applied Physics Letters 97 (11), 2010
Silicene: a review of recent experimental and theoretical investigations
M Houssa, A Dimoulas, A Molle
Journal of Physics: Condensed Matter 27 (25), 253002, 2015
Band alignments in metal–oxide–silicon structures with atomic-layer deposited and
VV Afanas’ ev, M Houssa, A Stesmans, MM Heyns
Journal of applied physics 91 (5), 3079-3084, 2002
Polarity effect on the temperature dependence of leakage current through gate dielectric stacks
Z Xu, M Houssa, S De Gendt, M Heyns
Applied physics letters 80 (11), 1975-1977, 2002
Getting through the Nature of Silicene: An sp2–sp3 Two-Dimensional Silicon Nanosheet
E Cinquanta, E Scalise, D Chiappe, C Grazianetti, B van den Broek, ...
The Journal of Physical Chemistry C 117 (32), 16719-16724, 2013
Electron energy barriers between (100)Si and ultrathin stacks of and insulators
VV Afanas’ ev, M Houssa, A Stesmans, MM Heyns
Applied Physics Letters 78 (20), 3073-3075, 2001
HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
A Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ...
Applied Physics Letters 86 (3), 2005
Passivation of Ge (100)∕ GeO2∕ high-κ gate stacks using thermal oxide treatments
F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ...
Journal of the Electrochemical Society 155 (2), G33, 2007
Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown
M Houssa, T Nigam, PW Mertens, MM Heyns
Journal of Applied Physics 84 (8), 4351-4355, 1998
Electronic properties of two-dimensional hexagonal germanium
M Houssa, G Pourtois, VV Afanas’Ev, A Stesmans
Applied Physics Letters 96 (8), 2010
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