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Yang Lu
Yang Lu
Schonfeld Strategic Advisors LLC
Verified email at schonfeld.com
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Year
Physical mechanisms of endurance degradation in TMO-RRAM
B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ...
Electron Devices Meeting (IEDM), 2011 IEEE International, 12.3. 1-12.3. 4, 2011
1372011
A physical based analytic model of RRAM operation for circuit simulation
P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ...
2012 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2012
492012
An electronic silicon-based memristor with a high switching uniformity
Y Lu, A Alvarez, CH Kao, JS Bow, SY Chen, IW Chen
Nature Electronics 2 (2), 66-74, 2019
412019
A simplified model for resistive switching of oxide-based resistive random access memory devices
Y Lu, B Gao, Y Fu, B Chen, L Liu, X Liu, J Kang
Electron Device Letters, IEEE 33 (3), 306-308, 2012
402012
Scalability of voltage-controlled filamentary and nanometallic resistance memory devices
Y Lu, JH Lee, IW Chen
Nanoscale 9 (34), 12690-12697, 2017
262017
Nanofilament Dynamics in Resistance Memory: Model and Validation
Y Lu, JH Lee, IW Chen
ACS nano 9 (7), 7649-7660, 2015
262015
Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect
Y Lu, B Chen, B Gao, Z Fang, YH Fu, JQ Yang, LF Liu, XY Liu, HY Yu, ...
2012 IEEE International Reliability Physics Symposium (IRPS), MY. 4.1-MY. 4.4, 2012
172012
Purely electronic nanometallic resistance switching random-access memory
Y Lu, JH Yoon, Y Dong, IW Chen
MRS Bulletin 43 (5), 358-364, 2018
122018
Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test
Y Lu, JH Lee, X Yang, IW Chen
Nanoscale 8 (42), 18113-18120, 2016
112016
Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory
X Yang, Y Lu, J Lee, IW Chen
Applied Physics Letters 108 (1), 013506, 2016
72016
Probing material conductivity in two-terminal devices by resistance difference
Y Lu, IW Chen
Applied Physics Letters 111 (8), 083501, 2017
42017
Quantum Electronic Interference in Nano Amorphous Silicon and Other Thin Film Resistance Memory
Y Lu
University of Pennsylvania, 2017
32017
Scaling behavior of pcm cells in off-state conduction
J Chen, RGD Jeyasingh, B Gao, Y Lu, YX Deng, XY Liu, JF Kang, ...
Proceedings of Technical Program of 2012 VLSI Technology, System and …, 2012
32012
Non-volatile resistance switching devices
IW Chen, Y Lu
US Patent App. 15/312,196, 2017
22017
Conducting Electrons in Amorphous Si Nanostructures: Coherent Interference and Metal-Insulator Transitions Mediated by Local Structures
Y Lu, IW Chen
arXiv preprint arXiv:1703.02203, 2017
22017
Pressure-Induced Insulator-to-Metal Transition Provides Evidence for Negative- Centers in Large-Gap Disordered Insulators
Y Lu, IW Chen
arXiv preprint arXiv:1703.02003, 2017
22017
Mechanical forming of resistive memory devices
IW Chen, Y Lu
US Patent 10,224,481, 2019
12019
Purely electronic nanometallic ReRAM
Y Lu, JH Yoon, Y Dong, IW Chen
arXiv preprint arXiv:1804.03302, 2018
12018
Probing Intrinsic Material Conductivity in Two-Terminal Devices: A Resistance-Difference Method
Y Lu, IW Chen
arXiv preprint arXiv:1610.07666, 2016
12016
Probing Intrinsic Material Conductivity in Two-Terminal Devices: A Resistance-Difference Method
Y Lu, IW Chen
arXiv preprint arXiv:1610.07666, 2016
12016
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