Randall Feenstra

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Jörg NeugebauerDirector, Max-Planck-Institut für EisenforschungVerified email at mpie.de
Joseph A. StroscioCenter for Nanoscale Science and Technology, National Institute of Standards and TechnologyVerified email at nist.gov
Nishtha SrivastavaIntel, Senior Process EngineerVerified email at andrew.cmu.edu
Gong Guthe University of Tennessee, KnoxvilleVerified email at utk.edu
Jerry WoodallUC DavisVerified email at ucdavis.edu
Marek SkowronskiCarnegie Mellon UniversityVerified email at cmu.edu
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityVerified email at psu.edu
Sergio C. de la BarreraAssistant Professor, University of TorontoVerified email at utoronto.ca
Wendy SarneyCCDC Army Research LabVerified email at mail.mil
Yifan NieLawrence Berkeley National Laboratory, Synopsys Inc.Verified email at lbl.gov
Debdeep JenaCornell UniversityVerified email at cornell.edu
Ivan VlassioukOak Ridge National LaboratoryVerified email at ornl.gov
Yu-Chuan LinMaterials Science and Engineering, National Yang Ming Chiao Tung University (NYCU)Verified email at nycu.edu.tw
Michael WidomProfessor of Physics, Carnegie Mellon UniversityVerified email at cmu.edu
Jun LiResearch Assistant, Physics, Carnegie Mellon UniversityVerified email at alumni.cmu.edu
Lourdes G Salamanca-RibaUniversity of MarylandVerified email at umd.edu
Luxmi PuriIntel CorporationVerified email at intel.com
Bhakti JariwalaPostdoc FellowVerified email at psu.edu
Patricia MooneyProfessor Emerita of Physics, Simon Fraser UniversityVerified email at sfu.ca
Huili Grace XingProf. of ECE & MSE, Cornell UniversityVerified email at cornell.edu

Randall Feenstra

Professor of Physics, Carnegie Mellon University

Verified email at cmu.edu - Homepage

surfaces and interfaces semiconductor materials 2D materials


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Tunneling spectroscopy of the Si (111) 2× 1 surface RM Feenstra, JA Stroscio, AP Fein Surface science 181 (1-2), 295-306, 1987	873	1987
Atom-selective imaging of the GaAs (110) surface RM Feenstra, JA Stroscio, J Tersoff, AP Fein Physical Review Letters 58 (12), 1192, 1987	813	1987
Electronic structure of the Si (111) 2× 1 surface by scanning-tunneling microscopy JA Stroscio, RM Feenstra, AP Fein Physical review letters 57 (20), 2579, 1986	813	1986
Tunneling spectroscopy of the GaAs (110) surface RM Feenstra, JA Stroscio Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987	538	1987
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors RM Feenstra Physical Review B 50 (7), 4561, 1994	530	1994
Reconstructions of the GaN (000 1) surface AR Smith, RM Feenstra, DW Greve, J Neugebauer, JE Northrup Physical review letters 79 (20), 3934, 1997	435	1997
Structure of GaN (0001): The laterally contracted Ga bilayer model JE Northrup, J Neugebauer, RM Feenstra, AR Smith Physical Review B 61 (15), 9932, 2000	421	2000
Determination of wurtzite GaN lattice polarity based on surface reconstruction AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Applied physics letters 72 (17), 2114-2116, 1998	406	1998
Adatom kinetics on and below the surface: The existence of a new diffusion channel J Neugebauer, TK Zywietz, M Scheffler, JE Northrup, H Chen, ... Physical review letters 90 (5), 056101, 2003	367	2003
Real-space observation of π-bonded chains and surface disorder on Si (111) 2× 1 RM Feenstra, WA Thompson, AP Fein Physical review letters 56 (6), 608, 1986	328	1986
Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998	302	1998
Geometric and electronic structure of antimony on the GaAs (110) surface studied by scanning tunneling microscopy P Mårtensson, RM Feenstra Physical Review B 39 (11), 7744, 1989	301	1989
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching V Ramachandran, MF Brady, AR Smith, RM Feenstra, DW Greve Journal of Electronic Materials 27, 308-312, 1998	282	1998
Inversion of wurtzite GaN (0001) by exposure to magnesium V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ... Applied Physics Letters 75 (6), 808-810, 1999	271	1999
Local state density and long-range screening of adsorbed oxygen atoms on the GaAs (110) surface JA Stroscio, RM Feenstra, AP Fein Physical review letters 58 (16), 1668, 1987	268	1987
Scanning tunneling spectroscopy RM Feenstra Surface science 299, 965-979, 1994	260	1994
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs RM Feenstra, JM Woodall, GD Pettit Physical review letters 71 (8), 1176, 1993	252	1993
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ... Journal of applied physics 64 (10), 4843-4852, 1988	251	1988
Fermi-level pinning at the Sb/GaAs (110) surface studied by scanning tunneling spectroscopy RM Feenstra, P Mårtensson Physical review letters 61 (4), 447, 1988	249	1988
Influence of misfit dislocations on the surface morphology of Si_1−xGe_x films MA Lutz, RM Feenstra, FK LeGoues, PM Mooney, JO Chu Applied Physics Letters 66 (6), 724-726, 1995	237	1995

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