Follow
Samaresh Das, Prof.
Samaresh Das, Prof.
Indian institute of technology, Tyndall National Institute, Hitachi Cambridge Lab
Verified email at care.iitd.ac.in - Homepage
Title
Cited by
Cited by
Year
High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors
V Dhyani, S Das
Scientific reports 7 (1), 44243, 2017
1432017
Nanocrystals for silicon-based light-emitting and memory devices
SK Ray, S Maikap, W Banerjee, S Das
Journal of Physics D: Applied Physics 46 (15), 153001, 2013
1412013
Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors
RD Trevisoli, RT Doria, M de Souza, S Das, I Ferain, MA Pavanello
IEEE Transactions on Electron Devices 59 (12), 3510-3518, 2012
1232012
High efficiency Si/CdS radial nanowire heterojunction photodetectors using etched Si nanowire templates
S Manna, S Das, SP Mondal, R Singha, SK Ray
The Journal of Physical Chemistry C 116 (12), 7126-7133, 2012
1202012
Wafer-Scale Synthesized MoS2/Porous Silicon Nanostructures for Efficient and Selective Ethanol Sensing at Room Temperature
P Dwivedi, S Das, S Dhanekar
ACS applied materials & interfaces 9 (24), 21017-21024, 2017
622017
Scalable fabrication of prototype sensor for selective and sub-ppm level ethanol sensing based on TiO2 nanotubes decorated porous silicon
P Dwivedi, N Chauhan, P Vivekanandan, S Das, DS Kumar, S Dhanekar
Sensors and Actuators B: Chemical 249, 602-610, 2017
582017
Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices
S Das, K Das, RK Singha, A Dhar, SK Ray
Applied Physics Letters 91 (23), 233118, 2007
562007
Studies on conduction mechanisms of pentacene based diodes using impedance spectroscopy
VS Reddy, S Das, SK Ray, A Dhar
Journal of Physics D: Applied Physics 40 (24), 7687, 2007
562007
MoS2/TiO2 Hybrid Nanostructure‐Based Field‐Effect Transistor for Highly Sensitive, Selective, and Rapid Detection of Gram‐Positive Bacteria
A Moudgil, S Singh, N Mishra, P Mishra, S Das
Advanced Materials Technologies 5 (1), 1900615, 2020
522020
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi
Applied Physics Letters 101 (21), 213502, 2012
512012
Structural and optical properties of germanium nanostructures on Si (100) and embedded in high-k oxides
SK Ray, S Das, RK Singha, S Manna, A Dhar
Nanoscale research letters 6 (1), 224, 2011
502011
Vancomycin functionalized WO3 thin film-based impedance sensor for efficient capture and highly selective detection of Gram-positive bacteria
S Singh, A Moudgil, N Mishra, S Das, P Mishra
Biosensors and Bioelectronics, 2019
492019
Self-powered room temperature broadband infrared photodetector based on MoSe2/germanium heterojunction with 35 A/W responsivity at 1550 nm
V Dhyani, M Das, W Uddin, PK Muduli, S Das
Applied Physics Letters 114 (12), 121101, 2019
492019
Optical and electrical properties of undoped and doped Ge nanocrystals
S Das, R Aluguri, S Manna, R Singha, A Dhar, L Pavesi, SK Ray
Nanoscale research letters 7 (1), 143, 2012
472012
Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy
RK Singha, S Manna, S Das, A Dhar, SK Ray
Applied Physics Letters 96 (23), 233113, 2010
442010
Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range
JW John, V Dhyani, S Maity, S Mukherjee, SK Ray, V Kumar, S Das
Nanotechnology 31 (45), 455208, 2020
432020
Optically Pumped Broadband Terahertz Modulator Based on Nanostructured PtSe2 Thin Films
A Jakhar, P Kumar, A Moudgil, V Dhyani, S Das
Advanced Optical Materials, 1901714, 2020
432020
Synthesis of α-MoO3 nano-flakes by dry oxidation of RF sputtered Mo thin films and their application in gas sensing
P Dwivedi, S Dhanekar, S Das
Semiconductor Science and Technology 31 (11), 115010, 2016
392016
The zero temperature coefficient in junctionless nanowire transistors
R Doria Trevisoli, R Trevisoli Doria, M de Souza, S Das, I Ferain, ...
Applied Physics Letters 101 (6), 062101, 2012
392012
Impact ionization induced dynamic floating body effect in junctionless transistors
R Yu, AN Nazarov, VS Lysenko, S Das, I Ferain, P Razavi, M Shayesteh, ...
Solid-State Electronics 90, 28-33, 2013
362013
The system can't perform the operation now. Try again later.
Articles 1–20