|Bipolar Cu/HfO 2/p++ Si memristors by sol-gel spin coating method and their application to environmental sensing|
SA Hadi, KM Humood, M Abi Jaoude, H Abunahla, HF Al Shehhi, ...
Scientific reports 9 (1), 1-15, 2019
|On‐chip tunable Memristor‐based flash‐ADC converter for artificial intelligence applications|
K Humood, B Mohammad, H Abunahla, A Azzam
IET Circuits, Devices & Systems 14 (1), 107-114, 2020
|Silver/(sub-10 nm) hafnium-oxide-based resistive switching devices on silicon: Characteristics and switching mechanism|
S Saylan, M Abi Jaoude, K Humood, F Ravaux, HF Al Shehhi, ...
Nanotechnology 31 (16), 165202, 2020
|Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si|
S Saylan, HM Aldosari, K Humood, M Abi Jaoude, F Ravaux, ...
Scientific reports 10 (1), 1-8, 2020
|High-Density ReRAM Crossbar with Selector Device for Sneak Path Reduction|
K Humood, SA Hadi, B Mohammad, M Abi Jaoude, A Alazzam, ...
2019 31st International Conference on Microelectronics (ICM), 244-248, 2019
|Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices|
K Humood, S Saylan, B Mohammad, M Abi Jaoude
Journal of Electronic Materials, 2021
|DTRNG: Low Cost and Robust True Random Number Generator Using DRAM Weak Write Scheme|
K Humood, B Mohammad, H Abunahla
IEEE International Symposium on Circuits and Systems (ISCAS) Daegu, Korea 2021, 2021
|Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode|
K Humood, S Saylan, M Abi Jaoude, B Mohammad, F Ravaux
Materials Science and Engineering: B 271, 115267, 2021
|SecureMem: efficient flexible Pt/GO/Cu memristor for true random number generation|
H Abunahla, K Humood, A Alazzam, B Mohammad
Flexible and Printed Electronics 6 (3), 035004, 2021