RakeshGnana David Jeyasingh
RakeshGnana David Jeyasingh
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Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
D Kuzum, RGD Jeyasingh, B Lee, HSP Wong
Nano letters 12 (5), 2179-2186, 2012
An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation
S Yu, Y Wu, R Jeyasingh, D Kuzum, HSP Wong
IEEE Transactions on Electron Devices 58 (8), 2729-2737, 2011
Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array
SB Eryilmaz, D Kuzum, R Jeyasingh, SB Kim, M BrightSky, C Lam, ...
Frontiers in neuroscience 8, 205, 2014
Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase
R Jeyasingh, SW Fong, J Lee, Z Li, KW Chang, D Mantegazza, M Asheghi, ...
Nano letters 14 (6), 3419-3426, 2014
Low-energy robust neuromorphic computation using synaptic devices
D Kuzum, RGD Jeyasingh, S Yu, HSP Wong
IEEE Transactions on Electron Devices 59 (12), 3489-3494, 2012
An ultra-low reset current cross-point phase change memory with carbon nanotube electrodes
J Liang, RGD Jeyasingh, HY Chen, HSP Wong
IEEE transactions on electron devices 59 (4), 1155-1163, 2012
Nanoscale phase change memory materials
MA Caldwell, RGD Jeyasingh, HSP Wong, DJ Milliron
Nanoscale 4 (15), 4382-4392, 2012
Energy efficient programming of nanoelectronic synaptic devices for large-scale implementation of associative and temporal sequence learning
D Kuzum, RGD Jeyasingh, HSP Wong
2011 International Electron Devices Meeting, 30.3. 1-30.3. 4, 2011
Electronic and optical switching of solution-phase deposited SnSe2 phase change memory material
RY Wang, MA Caldwell, RGD Jeyasingh, S Aloni, RM Shelby, HSP Wong, ...
Journal of Applied Physics 109 (11), 2011
A 1.4 ľA reset current phase change memory cell with integrated carbon nanotube electrodes for cross-point memory application
J Liang, RGD Jeyasingh, HY Chen, HSP Wong
2011 Symposium on VLSI Technology-Digest of Technical Papers, 100-101, 2011
Adaptive keeper design for dynamic logic circuits using rate sensing technique
RGD Jeyasingh, N Bhat, B Amrutur
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 19 (2), 295-304, 2009
Experimental demonstration of array-level learning with phase change synaptic devices
SB Eryilmaz, D Kuzum, RGD Jeyasingh, SB Kim, M BrightSky, C Lam, ...
2013 IEEE International Electron Devices Meeting, 25.5. 1-25.5. 4, 2013
Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO 2
S Yu, R Jeyasingh, Y Wu, HSP Wong
Physical Review B 85 (4), 045324, 2012
Ultrafast terahertz-induced response of GeSbTe phase-change materials
MJ Shu, P Zalden, F Chen, B Weems, I Chatzakis, F Xiong, R Jeyasingh, ...
Applied Physics Letters 104 (25), 2014
AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory
S Yu, R Jeyasingh, Y Wu, HS Philip Wong
Applied Physics Letters 99 (23), 2011
Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis
S Yu, R Jeyasingh, Y Wu, HSP Wong
2011 International Electron Devices Meeting, 12.1. 1-12.1. 4, 2011
One-Dimensional Thickness Scaling Study of Phase Change Material Using a Pseudo 3-Terminal Device
SB Kim, BJ Bae, Y Zhang, RGD Jeyasingh, Y Kim, IG Baek, S Park, ...
IEEE Transactions on Electron Devices 58 (5), 1483-1489, 2011
Microthermal stage for electrothermal characterization of phase-change memory
J Lee, SB Kim, R Jeyasingh, M Asheghi, HSP Wong, KE Goodson
IEEE electron device letters 32 (7), 952-954, 2011
Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)
HSP Wong, SB Kim, B Lee, MA Caldwell, J Liang, Y Wu, RGD Jeyasingh, ...
2010 10th IEEE International Conference on Solid-State and Integrated …, 2010
Grain boundaries, phase impurities, and anisotropic thermal conduction in phase-change memory
Z Li, J Lee, JP Reifenberg, M Asheghi, RGD Jeyasingh, HSP Wong, ...
IEEE electron device letters 32 (7), 961-963, 2011
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