| One-dimensional electrical contact to a two-dimensional material L Wang, I Meric, PY Huang, Q Gao, Y Gao, H Tran, T Taniguchi, ... Science 342 (6158), 614-617, 2013 | 3111 | 2013 |
| Ballistic InAs nanowire transistors S Chuang, Q Gao, R Kapadia, AC Ford, J Guo, A Javey Nano letters 13 (2), 555-558, 2013 | 212 | 2013 |
| Quantum confinement effects in nanoscale-thickness InAs membranes K Takei, H Fang, SB Kumar, R Kapadia, Q Gao, M Madsen, HS Kim, ... Nano letters 11 (11), 5008-5012, 2011 | 120 | 2011 |
| Stabilized compositions and processes of their preparation R Nunes, M Heisey, G Downton, L Evers-Smith US Patent App. 10/014,364, 2003 | 30 | 2003 |
| Role of chemical termination in edge contact to graphene Q Gao, J Guo APL Materials 2 (5), 2014 | 26 | 2014 |
| Asymmetric formation of epi semiconductor material in source/drain regions of FinFET devices A Arya, B Greene, Q Gao, C Nassar, J Hong, V Chhabra US Patent 10,269,932, 2019 | 19 | 2019 |
| Barrier height determination of silicide-silicon contact by hybrid density functional simulation Q Gao, J Guo Applied Physics Letters 99 (18), 2011 | 14 | 2011 |
| Ab initio quantum transport simulation of silicide-silicon contacts Q Gao, J Guo Journal of Applied Physics 111 (1), 2012 | 13 | 2012 |
| Two-dimensional quantum mechanical modeling of silicide–silicon contact resistance for nanoscale silicon-on-insulator metal-oxide-semiconductor field effect transistor Q Gao, Y Ouyang, J Guo Journal of Applied Physics 109 (10), 2011 | 8 | 2011 |
| Dynamic On-resistance and Tunneling Based De-trapping in GaN HEMT L Zhu, KH Teo, Q Gao 2015 IEEE Conference on Electron Devices and Solid-State Circuits, 2015 | 5 | 2015 |
| Finfet device comprising a piezoelectric liner for generating a surface charge and methods of making such a device Q Gao, N Siddiqui, AI Chou US Patent App. 15/657,373, 2019 | 4 | 2019 |
| H. a. Bechtel, J. Guo, A. Javey K Takei, H Fang, SB Kumar, R Kapadia, Q Gao, M Madsen, HS Kim, ... Nano Lett 11, 5008, 2011 | 4 | 2011 |
| Method for analyzing discrete traps in semiconductor devices A Kniazev, Q Gao, KH Teo US Patent 9,691,861, 2017 | 3 | 2017 |
| An extrinsic device and leakage mechanism in advanced bulk FinFET SRAM RW Mann, M Zhao, S Parihar, Q Gao, A Arya, C Radens, SM Pandey, ... IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27 (8 …, 2019 | 2 | 2019 |
| Innovative use of FA techniques SCM and OBIRCH along with TCAD to resolve junction scaling issues at advanced technology nodes G Johnson, J Nxumalo, A Arya, J Johnson, Q Gao, B Greene 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2018 | 2 | 2018 |
| Fin reveal forming STI regions having convex shape between fins XU Yiheng, H Wang, Q Gao, S Beasor, KB Koo, A Arya US Patent 10,832,965, 2020 | 1 | 2020 |
| Fin-type transistors with spacers on the gates S Yanping, H Zang, HC Lo, Q Gao, J Ciavatti, Y Qi, W Hong, Y Shi, JG Lee, ... US Patent 10,636,894, 2020 | 1 | 2020 |
| Composite sacrificial gate with etch selective layer Q Gao, N Siddiqui, A Arya, JR Sporre US Patent 10,593,555, 2020 | 1 | 2020 |
| Gate skirt oxidation for improved finfet performance and method for producing the same Q Gao, C Nassar, S Krishnamurthy, DAF LUPPI, J Sporre, S Siddiqui, ... US Patent App. 15/943,272, 2019 | 1 | 2019 |
| First Principles Calculations of the Effect of Stress in the I-V Characteristics of the CoSi2/Si Interface OD Restrepo, Q Gao, SM Pandey, E Cruz-Silva, EM Bazizi 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 1 | 2018 |
