| Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors M Si, Y Hu, Z Lin, X Sun, A Charnas, D Zheng, X Lyu, H Wang, K Cho, ... Nano Letters 21 (1), 500-506, 2020 | 119 | 2020 |
| Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide M Si, X Lyu, PR Shrestha, X Sun, H Wang, KP Cheung, PD Ye Applied Physics Letters 115 (7), 2019 | 86 | 2019 |
| Indium–tin-oxide transistors with one nanometer thick channel and ferroelectric gating M Si, J Andler, X Lyu, C Niu, S Datta, R Agrawal, PD Ye ACS nano 14 (9), 11542-11547, 2020 | 85 | 2020 |
| Ferroelectric polarization switching of hafnium zirconium oxide in a ferroelectric/dielectric stack M Si, X Lyu, PD Ye ACS Applied Electronic Materials 1 (5), 745-751, 2019 | 84 | 2019 |
| First direct measurement of sub-nanosecond polarization switching in ferroelectric hafnium zirconium oxide X Lyu, M Si, PR Shrestha, KP Cheung, PD Ye 2019 IEEE International Electron Devices Meeting (IEDM), 15.2. 1-15.2. 4, 2019 | 73 | 2019 |
| Ferroelectric and anti-ferroelectric hafnium zirconium oxide: Scaling limit, switching speed and record high polarization density X Lyu, M Si, X Sun, MA Capano, H Wang, PD Ye 2019 Symposium on VLSI Technology, T44-T45, 2019 | 66 | 2019 |
| Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction H Bae, A Charnas, X Sun, J Noh, M Si, W Chung, G Qiu, X Lyu, ... ACS omega 4 (24), 20756-20761, 2019 | 35 | 2019 |
| BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of … M Si, A Murray, Z Lin, J Andler, J Li, J Noh, S Alajlouni, C Niu, X Lyu, ... IEEE Transactions on Electron Devices 68 (7), 3195-3199, 2021 | 27 | 2021 |
| High-performance few-layer tellurium CMOS devices enabled by atomic layer deposited dielectric doping technique G Qiu, M Si, Y Wang, X Lyu, W Wu, DY Peide 2018 76th Device Research Conference (DRC), 1-2, 2018 | 24 | 2018 |
| Quantitative characterization of interface traps in ferroelectric/dielectric stack using conductance method Y Qu, J Li, M Si, X Lyu, DY Peide IEEE Transactions on Electron Devices 67 (12), 5315-5321, 2020 | 23 | 2020 |
| Multi-probe characterization of ferroelectric/dielectric interface by CV, PV and conductance methods J Li, Y Qu, M Si, X Lyu, DY Peide 2020 IEEE symposium on VLSI technology, 1-2, 2020 | 19 | 2020 |
| Quantitative characterization of ferroelectric/dielectric interface traps by pulse measurements J Li, M Si, Y Qu, X Lyu, DY Peide IEEE Transactions on Electron Devices 68 (3), 1214-1220, 2021 | 18 | 2021 |
| High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with … Z Lin, M Si, YC Luo, X Lyu, A Charnas, Z Chen, Z Yu, W Tsai, PC McIntyre, ... 2021 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2021 | 17 | 2021 |
| Record fast polarization switching observed in ferroelectric hafnium oxide crossbar arrays X Lyu, M Si, PR Shrestha, JP Campbell, KP Cheung, DY Peide 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 7-8, 2020 | 7 | 2020 |
| Variation and stochasticity in polycrystalline HZO based MFIM: Grain-growth coupled 3D phase field model based analysis R Koduru, AK Saha, M Si, X Lyu, PD Ye, SK Gupta 2021 IEEE International Electron Devices Meeting (IEDM), 15.2. 1-15.2. 4, 2021 | 5 | 2021 |
| ACS Nano 14, 11542 (2020) M Si, J Andler, X Lyu, C Niu, S Datta, R Agrawal, PD Ye | 5 | |
| Interfacial layer engineering in sub-5-nm HZO: Enabling low-temperature process, low-voltage operation, and high robustness E Yu, X Lyu, M Si, DY Peide, K Roy IEEE Transactions on Electron Devices, 2023 | 4 | 2023 |
| High-Performance In₂O₃-Based 1T1R FET for BEOL Memory Application Z Lin, M Si, X Lyu, P Ye IEEE Transactions on Electron Devices 68 (8), 3775-3779, 2021 | 4 | 2021 |
| Ultrathin transparent Copper (I) oxide films grown by plasma-enhanced atomic layer deposition for Back-end-of-line p-Type transistors H Bae, A Charnas, W Chung, M Si, X Lyu, X Sun, J Park, H Wang, ... Nano Express 2 (2), 020023, 2021 | 4 | 2021 |
| Determination of domain wall velocity and nucleation time by switching dynamics studies of ferroelectric hafnium zirconium oxide X Lyu, PR Shrestha, M Si, P Wang, J Li, KP Cheung, S Yu, DY Peide 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 3 | 2022 |
