| Development of nano-spherical RuO2 active material on AISI 317 steel substrate via pulse electrodeposition for supercapacitors R Arunachalam, RM Gnanamuthu, M Al Ahmad, S Mohan, RP Raj, ... Surface and Coatings Technology 276, 336-340, 2015 | 20 | 2015 |
| Characterization of m-GaN and a-GaN crystallographic planes after being chemically etched in TMAH solution N Al Taradeh, E Frayssinet, C Rodriguez, F Morancho, C Sonneville, ... Energies 14 (14), 4241, 2021 | 18 | 2021 |
| Non‐invasive piezoelectric detection of heartbeat rate and blood pressure N Al Taradeh, N Bastaki, I Saadat, M Al Ahmad Electronics Letters 51 (6), 452-454, 2015 | 15 | 2015 |
| Drain induced barrier lowering (DIBL) accurate model for nanoscale Si-MOSFET transistor MF Al-Mistarihi, A Rjoub, NR Al-Taradeh 2013 25th International Conference on Microelectronics (ICM), 1-4, 2013 | 14 | 2013 |
| Gate leakage current accurate models for nanoscale MOSFET transistors A Rjoub, N Al Taradeh, MF Al-Mistarihi 2014 24th International Workshop on Power and Timing Modeling, Optimization …, 2014 | 3 | 2014 |
| Accurate leakage current models for MOSFET nanoscale devices A Rjoub, M Mistarihi, N Al Taradeh International Journal of Electrical and Computer Engineering 10 (3), 2313, 2020 | 2 | 2020 |
| Observations in ZnO thin films based pressure sensors M Al Ahmad, N Al Taradeh 2015 IEEE 8th GCC Conference & Exhibition, 1-5, 2015 | 2 | 2015 |
| Backscattering coefficient accurate model for nanoscale Si-MOSFET transistor A Rjoub, MF Al-Mistarihi, NR Al-Taradeh 2013 IEEE Faible Tension Faible Consommation, 1-4, 2013 | 2 | 2013 |
| R3-Noria-methanesulfonate: A Molecular Cage with Superior Hyperpolarized Xenon-129 MRI Contrast Y Shepelytskyi, V Grynko, V Batarchuk, CL Hasselbrink, AH Kovacs, ... ACS Sensors 8 (12), 4707-4715, 2023 | 1 | 2023 |
| Accurate subthreshold leakage model for nanoscale MOSFET transistor A Rjoub, NR Al-Taradeh, MF Al-Mistarihi 2013 IEEE 20th International Conference on Electronics, Circuits, and …, 2013 | 1 | 2013 |
| Transport Mobility and Injection Velocity Model for Nanoscale MOSFET Transistor MF Al-Mistarihi, A Rjoub, NR Al-Taradeh | 1 | 2013 |
| Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices Z Zaidan, N Al Taradeh, C Rodriguez, A Jaouad, A Soltani, J Tasselli, ... Conférence Euro-méditerranéenne Matériaux, Composants et Systèmes EMCM-DS, 2022 | | 2022 |
| Design and Optimization of New Enhanced Vertical GaN Nanowire Transistor Using Sentaurus TCAD for Power Applications M Benjelloun, N Al Taradeh, C Rodriguez, N Gogneau, A Soltani, ... 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | | 2022 |
| Design and fabrication of normally-off vertical GaN power FinFET N Al Taradeh Université de Sherbrooke (Québec, Canada), 2021 | | 2021 |
| 2021 International Conference on Microelectronics (ICM) A Ababneh, M Abd El, A Abdallah, U Arab, A Abdel-Hamid, AAK Egypt, ... 2021 International Conference on Microelectronics (ICM), 2021 | | 2021 |
| Nanowires piezoelectric constants determination using current-voltage measurements M Al Ahmad, N Al Taradeh, I Saadat 2015 Joint IEEE International Symposium on the Applications of Ferroelectric …, 2015 | | 2015 |
| Accurate modeling for CMOS inverter overshooting time in nanoscale paradigm NR Al-Taradeh, A Rjoub, MF Al-Mistarihi 2013 25th International Conference on Microelectronics (ICM), 1-4, 2013 | | 2013 |
| 2013 25th International Conference on Microelectronics (ICM) MF Al-Mistarihi, A Rjoub, NR Al-Taradeh The 25th international conference on microelectronics (ICM 2013), 2013 | | 2013 |
| Recent Transport Models in Nanoscale MOSFET Transistor-Study and Analysis A Rjoub, MF Al-Mistarihi, NR Al-Taradeh | | 2013 |
| Modeling in Nanoscale CMOS technology: Challenges and Design Requirements. A Rjoub, N Al-Taradeh, MF Al-Mistarihi | | 2012 |
Abdoul RjoubJordan University of Science and TechnologyVerified email at purdue.edu
