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ismail Altuntaş
ismail Altuntaş
Verified email at cumhuriyet.edu.tr
Title
Cited by
Cited by
Year
The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/GaAs square quantum well
P Başer, I Altuntas, S Elagoz
Superlattices and Microstructures 92, 210-216, 2016
382016
Structural and electrical properties of nitrogen-doped ZnO thin films
ES Tuzemen, K Kara, S Elagoz, DK Takci, I Altuntas, R Esen
Applied Surface Science 318, 157-163, 2014
252014
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
I Altuntas, MN Kocak, G Yolcu, HF Budak, AE Kasapoğlu, S Horoz, E Gür, ...
Materials Science in Semiconductor Processing 127, 105733, 2021
192021
Optical and structural properties of In-rich InxGa1− xAs epitaxial layers on (1 0 0) InP for SWIR detectors
B Smiri, MB Arbia, D Ilkay, F Saidi, Z Othmen, B Dkhil, A Ismail, E Sezai, ...
Materials Science and Engineering: B 262, 114769, 2020
192020
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
V Sheremet, M Genç, M Elçi, N Sheremet, A Aydınlı, I Altuntaş, K Ding, ...
Superlattices and Microstructures 111, 1177-1194, 2017
192017
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
I Altuntas, H Dakhlaoui, ME Mora-Ramos, F Ungan
The European Physical Journal Plus 136 (11), 1174, 2021
152021
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural …
H Dakhlaoui, I Altuntas, ME Mora-Ramos, F Ungan
The European Physical Journal Plus 136 (8), 894, 2021
152021
Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential
I Altuntas
The European Physical Journal B 94 (9), 177, 2021
142021
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs
M Genç, V Sheremet, M Elçi, AE Kasapoğlu, İ Altuntaş, İ Demir, G Eğin, ...
Superlattices and Microstructures 128, 9-13, 2019
142019
The effects of two-stage HT-GaN growth with different V/III ratios during 3D–2D transition
I Altuntas, I Demir, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz
Journal of Physics D: Applied Physics 51 (3), 035105, 2017
142017
In concentration dependence of shallow impurity binding energy under the hydrostatic pressure
P Baser, I Altuntas, S Elagoz
Fen Bilimleri Dergisi 23 (4), 171, 2011
142011
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
V Sheremet, M Genç, N Gheshlaghi, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 113, 623-634, 2018
132018
Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
I Demir, I Altuntas, B Bulut, M Ezzedini, Y Ergun, S Elagoz
Semiconductor Science and Technology 33 (5), 055005, 2018
112018
InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
V Sheremet, N Gheshlaghi, M Sözen, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 116, 253-261, 2018
112018
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
I Simsek, G Yolcu, MN Koçak, K Pürlü, I Altuntas, I Demir
Journal of Materials Science: Materials in Electronics 32, 25507-25515, 2021
102021
In-situ and ex-situ face-to-face annealing of epitaxial AlN
MN Koçak, KM Pürlü, İ Perkitel, İ Altuntaş, İ Demir
Vacuum 203, 111284, 2022
82022
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
KM Pürlü, MN Kocak, G Yolcu, I Perkitel, İ Altuntaş, I Demir
Materials Science in Semiconductor Processing 142, 106464, 2022
82022
The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
İ PERKİTEL, İ ALTUNTAS, İ DEMİR
Gazi University Journal of Science, 1-1, 2021
82021
Microstructural evolution of MOVPE grown GaN by the carrier gas
I Demir, I Altuntas, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz
Semiconductors 52, 2030-2038, 2018
82018
Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature
HM M. B. Ullah, V. Avrutin, T. Nakagawara, S. Hafiz, I. Altuntaş, Ü. Özgür
Journal of Applied Physics 121 (18), 185704, 2017
82017
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Articles 1–20