The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/GaAs square quantum well P Başer, I Altuntas, S Elagoz Superlattices and Microstructures 92, 210-216, 2016 | 40 | 2016 |
Structural and electrical properties of nitrogen-doped ZnO thin films ES Tuzemen, K Kara, S Elagoz, DK Takci, I Altuntas, R Esen Applied Surface Science 318, 157-163, 2014 | 26 | 2014 |
Optical and structural properties of In-rich InxGa1− xAs epitaxial layers on (1 0 0) InP for SWIR detectors B Smiri, MB Arbia, D Ilkay, F Saidi, Z Othmen, B Dkhil, A Ismail, E Sezai, ... Materials Science and Engineering: B 262, 114769, 2020 | 24 | 2020 |
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111) I Altuntas, MN Kocak, G Yolcu, HF Budak, AE Kasapoğlu, S Horoz, E Gür, ... Materials Science in Semiconductor Processing 127, 105733, 2021 | 23 | 2021 |
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes V Sheremet, M Genç, M Elçi, N Sheremet, A Aydınlı, I Altuntaş, K Ding, ... Superlattices and Microstructures 111, 1177-1194, 2017 | 21 | 2017 |
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural … H Dakhlaoui, I Altuntas, ME Mora-Ramos, F Ungan The European Physical Journal Plus 136 (8), 894, 2021 | 17 | 2021 |
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential I Altuntas, H Dakhlaoui, ME Mora-Ramos, F Ungan The European Physical Journal Plus 136 (11), 1174, 2021 | 16 | 2021 |
Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential I Altuntas The European Physical Journal B 94 (9), 177, 2021 | 15 | 2021 |
In concentration dependence of shallow impurity binding energy under the hydrostatic pressure P Baser, I Altuntas, S Elagoz Fen Bilimleri Dergisi 23 (4), 171, 2011 | 15 | 2011 |
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs M Genç, V Sheremet, M Elçi, AE Kasapoğlu, İ Altuntaş, İ Demir, G Eğin, ... Superlattices and Microstructures 128, 9-13, 2019 | 14 | 2019 |
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors V Sheremet, M Genç, N Gheshlaghi, M Elçi, N Sheremet, A Aydınlı, ... Superlattices and Microstructures 113, 623-634, 2018 | 14 | 2018 |
The effects of two-stage HT-GaN growth with different V/III ratios during 3D–2D transition I Altuntas, I Demir, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz Journal of Physics D: Applied Physics 51 (3), 035105, 2017 | 14 | 2017 |
InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors V Sheremet, N Gheshlaghi, M Sözen, M Elçi, N Sheremet, A Aydınlı, ... Superlattices and Microstructures 116, 253-261, 2018 | 13 | 2018 |
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy I Simsek, G Yolcu, MN Koçak, K Pürlü, I Altuntas, I Demir Journal of Materials Science: Materials in Electronics 32, 25507-25515, 2021 | 12 | 2021 |
Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications I Demir, I Altuntas, B Bulut, M Ezzedini, Y Ergun, S Elagoz Semiconductor Science and Technology 33 (5), 055005, 2018 | 12 | 2018 |
The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN İ PERKİTEL, İ ALTUNTAS, İ DEMİR Gazi University Journal of Science, 1-1, 2021 | 10 | 2021 |
In-situ and ex-situ face-to-face annealing of epitaxial AlN MN Koçak, KM Pürlü, I Perkitel, İ Altuntaş, İ Demir Vacuum 203, 111284, 2022 | 9 | 2022 |
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE KM Pürlü, MN Kocak, G Yolcu, I Perkitel, İ Altuntaş, I Demir Materials Science in Semiconductor Processing 142, 106464, 2022 | 9 | 2022 |
Microstructural evolution of MOVPE grown GaN by the carrier gas I Demir, I Altuntas, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz Semiconductors 52, 2030-2038, 2018 | 8 | 2018 |
Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature HM M. B. Ullah, V. Avrutin, T. Nakagawara, S. Hafiz, I. Altuntaş, Ü. Özgür Journal of Applied Physics 121 (18), 185704, 2017 | 8 | 2017 |