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douglas c. hall
douglas c. hall
Department of Electrical Engineering, University of Notre Dame
Verified email at nd.edu
Title
Cited by
Cited by
Year
High-stability Er/sup 3+/-doped superfluorescent fiber sources
DC Hall, WK Burns, RP Moeller
Journal of lightwave technology 13 (7), 1452-1460, 1995
1611995
High-power, near-diffraction-limited large-area traveling-wave semiconductor amplifiers
L Goldberg, D Mehuys, MR Surette, DC Hall
IEEE journal of quantum electronics 29 (6), 2028-2043, 1993
1121993
Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe
DC Hall, L Goldberg, D Mehuys
Applied physics letters 61 (4), 384-386, 1992
1091992
High-power disorder-defined coupled stripe Al/sub/ital y//Ga/sub 1/minus///sub/ital y//As-GaAs-In/sub/ital x//Ga/sub 1/minus///sub/ital x//As quantum well heterostructure lasers
DC Hall, LJ Guido, P Gavrilovic, K Meehan, JE Williams, W Stutius
Appl. Phys. Lett.;(United States) 55 (3), 1989
731989
GaAs MOSFET using InAlP native oxide as gate dielectric
X Li, Y Cao, DC Hall, P Fay, B Han, A Wibowo, N Pan
IEEE Electron Device Letters 25 (12), 772-774, 2004
652004
3.3 W CW diffraction limited broad area semiconductor amplifier
L Goldberg, D Mehuys, DC Hall
Electronics Letters 12 (28), 1082-1084, 1992
571992
Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers
LJ Guido, GS Jackson, DC Hall, WE Plano, N Holonyak Jr
Applied physics letters 52 (7), 522-524, 1988
521988
Wavelength stability optimization in Er (3+)-doped superfluorescent fibre sources
DC Hall, WK Burns
Electronics letters 30 (8), 653-654, 1994
511994
Nonselective wet oxidation of AlGaAs heterostructure waveguides through controlled addition of oxygen
Y Luo, DC Hall
IEEE Journal of Selected Topics in Quantum Electronics 11 (6), 1284-1291, 2005
432005
Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy
KA Wang, Y Cao, J Simon, J Zhang, A Mintairov, J Merz, D Hall, T Kosel, ...
Applied physics letters 89 (16), 2006
422006
Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications
Y Cao, J Zhang, X Li, TH Kosel, P Fay, DC Hall, XB Zhang, RD Dupuis, ...
Applied Physics Letters 86 (6), 2005
422005
Room-temperature 1.5 μm photoluminescence of -doped native oxides
L Kou, DC Hall, H Wu
Applied physics letters 72 (26), 3411-3413, 1998
391998
High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation
GS Jackson, DC Hall, LJ Guido, WE Plano, N Pan, N Holonyak Jr, ...
Applied physics letters 52 (9), 691-693, 1988
381988
Ultra-high-stability two-stage superfluorescent fibre sources for fibre optic gyroscopes
PZ Zatta, DC Hall
Electronics letters 38 (9), 1, 2002
362002
Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric
Y Cao, X Li, J Zhang, P Fay, TH Kosel, DC Hall
IEEE Electron Device Letters 27 (5), 317-319, 2006
332006
Oxidized heterostructure planar waveguides
Y Luo, DC Hall, L Kou, L Steingart, JH Jackson, O Blum, H Hou
Applied physics letters 75 (20), 3078-3080, 1999
331999
Effects of microcracking on AlxGa1− xAs‐GaAs quantum well lasers grown on Si
DG Deppe, DC Hall, N Holonyak, RJ Matyi, H Shichijo, JE Epler
Applied physics letters 53 (10), 874-876, 1988
331988
Native‐oxide‐defined coupled‐stripe AlxGa1−xAs‐GaAs quantum well heterostructure lasers
JM Dallesasse, N Holonyak Jr, DC Hall, N El‐Zein, AR Sugg, SC Smith, ...
Applied physics letters 58 (8), 834-836, 1991
321991
High‐power disorder‐defined coupled stripe AlyGa1− yAs‐GaAs‐InxGa1− xAs quantum well heterostructure lasers
JS Major, DC Hall, LJ Guido, N Holonyak, P Gavrilovic, K Meehan, ...
Applied physics letters 55 (3), 271-273, 1989
301989
Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si
DC Hall, DG Deppe, N Holonyak Jr, RJ Matyi, H Shichijo, JE Epler
Journal of applied physics 64 (6), 2854-2860, 1988
301988
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