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SON T. LE
SON T. LE
Laboratory for Physical Sciences & National Institute of Standards and Technology
Verified email at lps.umd.edu
Title
Cited by
Cited by
Year
How to report and benchmark emerging field-effect transistors
Z Cheng, CS Pang, P Wang, ST Le, Y Wu, D Shahrjerdi, I Radu, ...
Nature Electronics 5 (7), 416-423, 2022
1412022
High-efficiency silicon-compatible photodetectors based on Ge quantum dots
S Cosentino, P Liu, ST Le, S Lee, D Paine, A Zaslavsky, D Pacifici, ...
Applied Physics Letters 98 (22), 2011
742011
Edge-state transport in graphene junctions in the quantum Hall regime
NN Klimov, ST Le, J Yan, P Agnihotri, E Comfort, JU Lee, DB Newell, ...
Physical Review B 92 (24), 241301, 2015
572015
Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors
P Liu, S Cosentino, ST Le, S Lee, D Paine, A Zaslavsky, D Pacifici, ...
Journal of Applied Physics 112 (8), 2012
532012
Axial SiGe heteronanowire tunneling field-effect transistors
ST Le, P Jannaty, X Luo, A Zaslavsky, DE Perea, SA Dayeh, ST Picraux
Nano letters 12 (11), 5850-5855, 2012
502012
Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering
S Zhang, ST Le, CA Richter, CA Hacker
Applied physics letters 115 (7), 2019
462019
Edge channels of broken-symmetry quantum Hall states in graphene visualized by atomic force microscopy
S Kim, J Schwenk, D Walkup, Y Zeng, F Ghahari, ST Le, MR Slot, ...
Nature Communications 12 (1), 2852, 2021
432021
Substrate-mediated hyperbolic phonon polaritons in MoO3
JJ Schwartz, ST Le, S Krylyuk, CA Richter, AV Davydov, A Centrone
Nanophotonics 10 (5), 1517-1527, 2021
372021
Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function
JR Hajzus, AJ Biacchi, ST Le, CA Richter, ARH Walker, LM Porter
Nanoscale 10 (1), 319-327, 2018
302018
Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing
NB Guros, ST Le, S Zhang, BA Sperling, JB Klauda, CA Richter, ...
ACS applied materials & interfaces 11 (18), 16683-16692, 2019
292019
Achieving μeV tunneling resolution in an in-operando scanning tunneling microscopy, atomic force microscopy, and magnetotransport system for quantum materials research
J Schwenk, S Kim, J Berwanger, F Ghahari, D Walkup, MR Slot, ST Le, ...
Review of Scientific Instruments 91 (7), 2020
282020
Growth, electrical rectification, and gate control in axial in situ doped pn junction germanium nanowires
ST Le, P Jannaty, A Zaslavsky, SA Dayeh, ST Picraux
Applied Physics Letters 96 (26), 2010
282010
Are 2D interfaces really flat?
Z Cheng, H Zhang, ST Le, H Abuzaid, G Li, L Cao, AV Davydov, ...
ACS nano 16 (4), 5316-5324, 2022
252022
Contact and noncontact measurement of electronic transport in individual 2d SnS colloidal semiconductor nanocrystals
AJ Biacchi, ST Le, BG Alberding, JA Hagmann, SJ Pookpanratana, ...
ACS nano 12 (10), 10045-10060, 2018
232018
Thermal neutron cross-section and resonance integral of the 186W( n, γ) 187W reaction
NV Do, PD Khue, KT Thanh, LT Son, G Kim, YS Lee, Y Oh, HS Lee, ...
Nuclear Instruments and Methods in Physics Research B 266 (6), 863-871, 2008
222008
Quantum capacitance-limited MoS 2 biosensors enable remote label-free enzyme measurements
ST Le, NB Guros, RC Bruce, A Cardone, ND Amin, S Zhang, JB Klauda, ...
Nanoscale 11 (33), 15622-15632, 2019
182019
Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology
S Cosentino, S Mirabella, P Liu, ST Le, M Miritello, S Lee, I Crupi, ...
Thin Solid Films 548, 551-555, 2013
182013
Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor
P Zhang, ST Le, X Hou, A Zaslavsky, DE Perea, SA Dayeh, ST Picraux
Applied Physics Letters 105 (6), 2014
152014
Measurement of thermal neutron cross-sections and resonance integrals for 179Hf(n,γ)180mHf and 180Hf(n,γ)181Hf reactions at the Pohang neutron facility
WN Van Do Nguyen, Duc Khue Pham, Tien Thanh Kim, Truong Son Le, Young Seok ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
102008
Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping
S Zhang, HJ Chuang, ST Le, CA Richter, KM McCreary, BT Jonker, ...
AIP Advances 12 (8), 2022
92022
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Articles 1–20