Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Müller, TS Böscke, S Müller, E Yurchuk, P Polakowski, J Paul, D Martin, ... 2013 IEEE International Electron Devices Meeting, 10.8. 1-10.8. 4, 2013 | 458 | 2013 |
Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications P Polakowski, S Riedel, W Weinreich, M Rudolf, J Sundqvist, K Seidel, ... 2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014 | 120 | 2014 |
Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics V Yanev, M Rommel, M Lemberger, S Petersen, B Amon, T Erlbacher, ... Applied Physics Letters 92 (25), 2008 | 95 | 2008 |
Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo G Jegert, A Kersch, W Weinreich, U Schröder, P Lugli Applied Physics Letters 96 (6), 2010 | 84 | 2010 |
Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping W Weinreich, L Wilde, J Müller, J Sundqvist, E Erben, J Heitmann, ... Journal of Vacuum Science & Technology A 31 (1), 2013 | 77* | 2013 |
Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr (1− x) AlxO2 films W Weinreich, R Reiche, M Lemberger, G Jegert, J Müller, L Wilde, ... Microelectronic engineering 86 (7-9), 1826-1829, 2009 | 75 | 2009 |
Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2 C Mart, T Kämpfe, S Zybell, W Weinreich Applied Physics Letters 112 (5), 2018 | 69 | 2018 |
Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes W Weinreich, A Shariq, K Seidel, J Sundqvist, A Paskaleva, M Lemberger, ... Journal of Vacuum Science & Technology B 31 (1), 2013 | 62 | 2013 |
Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films C Mart, K Kühnel, T Kämpfe, S Zybell, W Weinreich Applied Physics Letters 114 (10), 2019 | 60 | 2019 |
Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates D Martin, M Grube, W Weinreich, J Müller, WM Weber, U Schröder, ... Journal of Applied Physics 113 (19), 2013 | 54 | 2013 |
Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition J Müller, TS Böscke, U Schröder, M Reinicke, L Oberbeck, D Zhou, ... Microelectronic engineering 86 (7-9), 1818-1821, 2009 | 51 | 2009 |
Doping concentration dependent piezoelectric behavior of Si: HfO2 thin-films S Kirbach, M Lederer, S Eßlinger, C Mart, M Czernohorsky, W Weinreich, ... Applied Physics Letters 118 (1), 2021 | 45 | 2021 |
Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors D Zhou, U Schroeder, J Xu, J Heitmann, G Jegert, W Weinreich, M Kerber, ... Journal of Applied Physics 108 (12), 2010 | 44 | 2010 |
Monte Carlo Simulation of Leakage Currents inCapacitors G Jegert, A Kersch, W Weinreich, P Lugli IEEE Transactions on Electron Devices 58 (2), 327-334, 2010 | 43 | 2010 |
Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness G Jegert, A Kersch, W Weinreich, P Lugli Journal of Applied Physics 109 (1), 2011 | 42 | 2011 |
High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates K Kühnel, M Czernohorsky, C Mart, W Weinreich Journal of Vacuum Science & Technology B 37 (2), 2019 | 40 | 2019 |
Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles C Mart, T Kämpfe, R Hoffmann, S Eßlinger, S Kirbach, K Kühnel, ... Advanced Electronic Materials 6 (3), 1901015, 2020 | 39 | 2020 |
Influence of the amorphous/crystalline phase of Zr1− xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks A Paskaleva, M Lemberger, AJ Bauer, W Weinreich, J Heitmann, E Erben, ... Journal of Applied Physics 106 (5), 2009 | 31 | 2009 |
Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO2) Thin Films on Area‐Enhanced Substrates B Hanrahan, C Mart, T Kämpfe, M Czernohorsky, W Weinreich, A Smith Energy Technology 7 (10), 1900515, 2019 | 28 | 2019 |
Doping ferroelectric hafnium oxide by in-situ precursor mixing C Mart, K Kühnel, T Kämpfe, M Czernohorsky, M Wiatr, S Kolodinski, ... ACS Applied Electronic Materials 1 (12), 2612-2618, 2019 | 26 | 2019 |