| GaN: Processing, defects, and devices SJ Pearton, JC Zolper, RJ Shul, F Ren Journal of applied physics 86 (1), 1-78, 1999 | 2306 | 1999 |
| A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro Applied Physics Reviews 5 (1), 2018 | 2283 | 2018 |
| Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ... Journal of Applied Physics 93 (1), 1-13, 2003 | 1213 | 2003 |
| Hydrogen-selective sensing at room temperature with ZnO nanorods HT Wang, BS Kang, F Ren, LC Tien, PW Sadik, DP Norton, SJ Pearton, ... Applied Physics Letters 86 (24), 2005 | 703 | 2005 |
| Fabrication and performance of GaN electronic devices SJ Pearton, F Ren, AP Zhang, KP Lee Materials Science and Engineering: R: Reports 30 (3-6), 55-212, 2000 | 638 | 2000 |
| ZnO nanowire growth and devices YW Heo, DP Norton, LC Tien, Y Kwon, BS Kang, F Ren, SJ Pearton, ... Materials Science and Engineering: R: Reports 47 (1-2), 1-47, 2004 | 576 | 2004 |
| Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim Journal of Applied Physics 124 (22), 2018 | 537 | 2018 |
| Site-specific growth of ZnO nanorods using catalysis-driven molecular-beam epitaxy YW Heo, V Varadarajan, M Kaufman, K Kim, DP Norton, F Ren, ... Applied physics letters 81 (16), 3046-3048, 2002 | 486 | 2002 |
| Magnetic properties of n-GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ... Applied Physics Letters 80 (21), 3964-3966, 2002 | 451 | 2002 |
| Perspective—opportunities and future directions for Ga2O3 MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 6 (5), P356, 2017 | 448 | 2017 |
| GaN-based diodes and transistors for chemical, gas, biological and pressure sensing SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ... Journal of Physics: Condensed Matter 16 (29), R961, 2004 | 436 | 2004 |
| Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods LC Tien, PW Sadik, DP Norton, LF Voss, SJ Pearton, HT Wang, BS Kang, ... Applied Physics Letters 87 (22), 2005 | 354 | 2005 |
| Ionizing radiation damage effects on GaN devices SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov ECS Journal of solid state science and technology 5 (2), Q35, 2015 | 335 | 2015 |
| Depletion-mode ZnO nanowire field-effect transistor YW Heo, LC Tien, Y Kwon, DP Norton, SJ Pearton, BS Kang, F Ren Applied Physics Letters 85 (12), 2274-2276, 2004 | 335 | 2004 |
| A survey of ohmic contacts to III-V compound semiconductors AG Baca, F Ren, JC Zolper, RD Briggs, SJ Pearton Thin solid films 308, 599-606, 1997 | 330 | 1997 |
| Recent advances in wide bandgap semiconductor biological and gas sensors SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ... Progress in Materials Science 55 (1), 1-59, 2010 | 322 | 2010 |
| Effect of temperature on metal–oxide–semiconductor field-effect transistors F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ... Applied Physics Letters 73 (26), 3893-3895, 1998 | 285 | 1998 |
| GaN electronics SJ Pearton, F Ren Advanced Materials 12 (21), 1571-1580, 2000 | 280 | 2000 |
| Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy CR Abernathy, SJ Pearton, R Caruso, F Ren, J Kovalchik Applied Physics Letters 55 (17), 1750-1752, 1989 | 266 | 1989 |
| Electrical effects of plasma damage in XA Cao, SJ Pearton, AP Zhang, GT Dang, F Ren, RJ Shul, L Zhang, ... Applied physics letters 75 (17), 2569-2571, 1999 | 254 | 1999 |
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaVerified email at mse.ufl.edu
