Joydeep Ghosh
Joydeep Ghosh
Micron India
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Transfer learning-based artificial intelligence-integrated physical modeling to enable failure analysis for 3 nanometer and smaller silicon-based CMOS transistors
J Pan, KL Low, J Ghosh, S Jayavelu, MM Ferdaus, SY Lim, E Zamburg, ...
ACS Applied Nano Materials 4 (7), 6903-6915, 2021
Modelling of multipurpose spintronic devices
T Windbacher, J Ghosh, A Makarov, V Sverdlov, S Selberherr
International Journal of Nanotechnology 12 (3-4), 313-331, 2015
A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures
J Ghosh, S Das, S Mukherjee, S Ganguly, A Laha
Microelectronic Engineering 216, 111097, 2019
Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
Microelectronic Engineering 147, 89-91, 2015
Temperature dependent variability analysis of threshold voltage and on-current for optimum switching performance by Gallium Nitride-based junctionless FinFET
S Mukherjee, S Dutta, J Ghosh, D Saha, A Laha, S Ganguly
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 118-120, 2019
Spin injection in a semiconductor through a space-charge layer
J Ghosh, T Windbacher, V Sverdlov, S Selberherr
Solid-state electronics 101, 116-121, 2014
Spin injection and diffusion in silicon based devices from a space charge layer
J Ghosh, V Sverdlov, T Windbacher, S Selberherr
Journal of Applied Physics 115, 17C503, 2014
Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states
J Ghosh, S Ganguly
Japanese Journal of Applied Physics 57 (8), 080305, 2018
Physical insights into vacancy-based memtransistors: Toward power efficiency, reliable operation, and scalability
M Sivan, JF Leong, J Ghosh, B Tang, J Pan, E Zamburg, AVY Thean
ACS nano 16 (9), 14308-14322, 2022
Dependence of spin lifetime on spin injection orientation in strained silicon films
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
Significance of activation functions in developing an online classifier for semiconductor defect detection
MM Ferdaus, B Zhou, JW Yoon, KL Low, J Pan, J Ghosh, M Wu, X Li, ...
Knowledge-Based Systems 248, 108818, 2022
Modeling the effect of the two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure
J Ghosh, A Laha, D Saha, S Ganguly
Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International …, 2017
Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures
M Date, S Mukherjee, J Ghosh, D Saha, S Ganguly, A Laha, P Ghosh
Japanese Journal of Applied Physics 58 (9), 094001, 2019
Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study
J Ghosh, D Saha, S Ganguly, A Laha
International Journal of RF and Microwave Computer‐Aided Engineering 28 (8 …, 2018
CMOS-compatible spintronic devices
V Sverdlov, J Ghosh, A Makarov, T Windbacher, S Selberherr
2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2015
Variation of spin lifetime with spin injection orientation in strained thin silicon films
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
ECS Transactions 66 (5), 233, 2015
Innovative use of TCAD Process Simulation for Device Failure Analysis
SY Lim, J Ghosh, A Thean
2021 IEEE International Symposium on the Physical and Failure Analysis of …, 2021
Analytical modeling of 2DEG and surface barrier height in GaN/AlGaN/GaN heterostructures
J Ghosh, N Goyal, S Ganguly
Proc. in Intl. Conf. of Emerg. Elect., 2016
Enhancement of electron spin relaxation time in thin SOI films by spin injection orientation and uniaxial stress
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
Journal of Nano Research 39, 34-42, 2016
Injection direction sensitive spin lifetime model in a strained thin silicon film
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
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