R Opila
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Nucleation and growth of CdSe on ZnS quantum crystallite seeds, and vice versa, in inverse micelle media
AR Kortan, R Hull, RL Opila, MG Bawendi, ML Steigerwald, PJ Carroll, ...
Journal of the American Chemical Society 112 (4), 1327-1332, 1990
Promising Thermoelectric Properties of Commercial PEDOT:PSS Materials and Their Bi2Te3 Powder Composites
B Zhang, J Sun, HE Katz, F Fang, RL Opila
ACS applied materials & interfaces 2 (11), 3170-3178, 2010
Properties of high κ gate dielectrics and for Si
J Kwo, M Hong, AR Kortan, KL Queeney, YJ Chabal, RL Opila Jr, ...
Journal of Applied Physics 89 (7), 3920-3927, 2001
Infrared spectroscopic analysis of the interface structure of thermally oxidized silicon
KT Queeney, MK Weldon, JP Chang, YJ Chabal, AB Gurevich, J Sapjeta, ...
Journal of Applied Physics 87 (3), 1322-1330, 2000
Aluminum substitution in Y
T Siegrist, LF Schneemeyer, JV Waszczak, NP Singh, RL Opila, B Batlogg, ...
Physical Review B 36 (16), 8365, 1987
Bond insertion, complexation, and penetration pathways of vapor-deposited aluminum atoms with HO-and CH3O-terminated organic monolayers
GL Fisher, AV Walker, AE Hooper, TB Tighe, KB Bahnck, HT Skriba, ...
Journal of the American Chemical Society 124 (19), 5528-5541, 2002
The Role of Carbonyl Groups in the Photoluminescence of Poly (p-phenylenevinylene)
F Papadimitrakopoulos, K Konstadinidis, TM Miller, R Opila, ...
Chemistry of materials 6 (9), 1563-1568, 1994
Dielectric properties of electron‐beam deposited Ga2O3 films
M Passlack, NEJ Hunt, EF Schubert, GJ Zydzik, M Hong, JP Mannaerts, ...
Applied physics letters 64 (20), 2715-2717, 1994
Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
M Passlack, M Hong, JP Mannaerts, RL Opila, SNG Chu, N Moriya, F Ren, ...
IEEE Transactions on Electron Devices 44 (2), 214-225, 1997
Chemical effects of methyl and methyl ester groups on the nucleation and growth of vapor-deposited aluminum films
A Hooper, GL Fisher, K Konstadinidis, D Jung, H Nguyen, R Opila, ...
Journal of the American Chemical Society 121 (35), 8052-8064, 1999
The Interaction of Vapor-Deposited Al Atoms with CO2H Groups at the Surface of a Self-Assembled Alkanethiolate Monolayer on Gold
GL Fisher, AE Hooper, RL Opila, DL Allara, N Winograd
The Journal of Physical Chemistry B 104 (14), 3267-3273, 2000
Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
JP Chang, ML Green, VM Donnelly, RL Opila, J Eng Jr, J Sapjeta, ...
Journal of Applied Physics 87 (9), 4449-4455, 2000
Growth and structural characterization of superconducting Ba1–xKxBiO3 single crystals
LF Schneemeyer, JK Thomas, T Siegrist, B Batlogg, LW Rupp, RL Opila, ...
Nature 335 (6189), 421-423, 1988
Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2
DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ...
Journal of Vacuum Science & Technology A 28 (5), 1060-1072, 2010
An in-situ X-ray photoelectron study of the interaction between vapor-deposited Ti atoms and functional groups at the surfaces of self-assembled monolayers
K Konstadinidis, P Zhang, RL Opila, DL Allara
Surface science 338 (1-3), 300-312, 1995
Gate quality doped high K films for CMOS beyond 100 nm: 3-10 nm Al/sub 2/O/sub 3/with low leakage and low interface states
L Manchanda, WH Lee, JE Bower, FH Baumann, WL Brown, CJ Case, ...
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
Photoemission study of Zr-and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface charge
RL Opila, GD Wilk, MA Alam, RB Van Dover, BW Busch
Applied Physics Letters 81 (10), 1788-1790, 2002
Epitaxial growth and magnetic behavior of NiFe2O4 thin films
S Venzke, RB Van Dover, JM Phillips, EM Gyorgy, T Siegrist, CH Chen, ...
Journal of materials research 11, 1187-1198, 1996
Thermal desorption of Xe from the W (110) plane
R Opila, R Gomer
Surface Science 112 (1-2), 1-22, 1981
Thin films and interfaces in microelectronics: composition and chemistry as function of depth
RL Opila, J Eng Jr
Progress in Surface Science 69 (4-6), 125-163, 2002
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