Follow
C. Claeys
Title
Cited by
Cited by
Year
Germanium-based technologies: from materials to devices
C Claeys, E Simoen
elsevier, 2011
7922011
Radiation effects in advanced semiconductor materials and devices
C Claeys, E Simoen
Springer Science & Business Media, 2002
5972002
Silicon-on-insulator'gate-all-around device'
JP Colinge, MH Gao, A Romano-Rodriguez, H Maes, C Claeys
International Technical Digest on Electron Devices, 595-598, 1990
4771990
On the flicker noise in submicron silicon MOSFETs
E Simoen, C Claeys
Solid-State Electronics 43 (5), 865-882, 1999
3401999
Low temperature electronics: physics, devices, circuits, and applications
EA Gutierrez-D, J Deen, C Claeys
Elsevier, 2000
2372000
Explaining the amplitude of RTS noise in submicrometer MOSFETs
E Simoen, B Dierickx, CL Claeys, GJ Declerck
IEEE Transactions on Electron Devices 39 (2), 422-429, 1992
1751992
A foveated retina-like sensor using CCD technology
J Spiegel, G Kreider, C Claeys, I Debusschere, G Sandini, P Dario, ...
Analog VLSI implementation of neural systems, 189-211, 1989
1731989
Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks
P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
1272009
A 1006 element hybrid silicon pixel detector with strobed binary output
F Anghinolfi, P Aspell, K Bass, W Beusch, L Bosisio, C Boutonnet, ...
IEEE transactions on nuclear science 39 (4), 654-661, 1992
1251992
Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
E Simoen, A Mercha, L Pantisano, C Claeys, E Young
IEEE transactions on electron devices 51 (5), 780-784, 2004
1222004
Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013
1152013
Impact strain engineering on gate stack quality and reliability
C Claeys, E Simoen, S Put, G Giusi, F Crupi
Solid-State Electronics 52 (8), 1115-1126, 2008
1032008
Impact of oxygen related extended defects on silicon diode characteristics
J Vanhellemont, E Simoen, A Kaniava, M Libezny, C Claeys
Journal of applied physics 77 (11), 5669-5676, 1995
1011995
Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n Junctions
G Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ...
IEEE transactions on electron devices 55 (9), 2287-2296, 2008
982008
New technologies for learning: Contribution of ICT to innovation in education
R Dillemans, J Lowyck, G Van derPerre, C Claeys, J Elen
Leuven University Press; Leuven, 1998
921998
Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates
ALP Rotondaro, TQ Hurd, A Kaniava, J Vanhellemont, E Simoen, ...
Journal of the Electrochemical Society 143 (9), 3014, 1996
911996
Challenges and opportunities in advanced Ge pMOSFETs
E Simoen, J Mitard, G Hellings, G Eneman, B De Jaeger, L Witters, ...
Materials Science in Semiconductor Processing 15 (6), 588-600, 2012
872012
Random Telegraph Signal: a local probe for single point defect studies in solid-state devices
E Simoen, C Claeys
Materials Science and Engineering: B 91, 136-143, 2002
812002
Laser-and heavy ion-induced charge collection in bulk FinFETs
F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011
782011
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013
772013
The system can't perform the operation now. Try again later.
Articles 1–20