| Germanium-based technologies: from materials to devices C Claeys, E Simoen elsevier, 2011 | 829 | 2011 |
| Radiation effects in advanced semiconductor materials and devices C Claeys, E Simoen Springer Science & Business Media, 2002 | 622 | 2002 |
| Silicon-on-insulator'gate-all-around device' JP Colinge, MH Gao, A Romano-Rodriguez, H Maes, C Claeys International Technical Digest on Electron Devices, 595-598, 1990 | 497 | 1990 |
| On the flicker noise in submicron silicon MOSFETs E Simoen, C Claeys Solid-State Electronics 43 (5), 865-882, 1999 | 352 | 1999 |
| Low temperature electronics: physics, devices, circuits, and applications EA Gutierrez-D, J Deen, C Claeys Elsevier, 2000 | 253 | 2000 |
| A foveated retina-like sensor using CCD technology J Van der Spiegel, G Kreider, C Claeys, I Debusschere, G Sandini, ... Analog VLSI implementation of neural systems, 189-211, 1989 | 179 | 1989 |
| Explaining the amplitude of RTS noise in submicrometer MOSFETs E Simoen, B Dierickx, CL Claeys, GJ Declerck IEEE Transactions on Electron Devices 39 (2), 422-429, 1992 | 174 | 1992 |
| Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ... IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009 | 131 | 2009 |
| Radiation effects in advanced multiple gate and silicon-on-insulator transistors E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ... IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013 | 128 | 2013 |
| Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness E Simoen, A Mercha, L Pantisano, C Claeys, E Young IEEE transactions on electron devices 51 (5), 780-784, 2004 | 127 | 2004 |
| A 1006 element hybrid silicon pixel detector with strobed binary output F Anghinolfi, P Aspell, K Bass, W Beusch, L Bosisio, C Boutonnet, ... IEEE transactions on nuclear science 39 (4), 654-661, 1992 | 125 | 1992 |
| Impact strain engineering on gate stack quality and reliability C Claeys, E Simoen, S Put, G Giusi, F Crupi Solid-State Electronics 52 (8), 1115-1126, 2008 | 107 | 2008 |
| Impact of oxygen related extended defects on silicon diode characteristics J Vanhellemont, E Simoen, A Kaniava, M Libezny, C Claeys Journal of Applied Physics 77 (11), 5669-5676, 1995 | 104 | 1995 |
| Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n Junctions G Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ... IEEE transactions on electron devices 55 (9), 2287-2296, 2008 | 101 | 2008 |
| Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates ALP Rotondaro, TQ Hurd, A Kaniava, J Vanhellemont, E Simoen, ... Journal of the Electrochemical Society 143 (9), 3014, 1996 | 94 | 1996 |
| New technologies for learning: Contribution of ICT to innovation in education R Dillemans, J Lowyck, G Van derPerre, C Claeys, J Elen Leuven University Press; Leuven, 1998 | 91 | 1998 |
| Challenges and opportunities in advanced Ge pMOSFETs E Simoen, J Mitard, G Hellings, G Eneman, B De Jaeger, L Witters, ... Materials Science in Semiconductor Processing 15 (6), 588-600, 2012 | 89 | 2012 |
| Random Telegraph Signal: a local probe for single point defect studies in solid-state devices E Simoen, C Claeys Materials Science and Engineering: B 91, 136-143, 2002 | 83 | 2002 |
| Border traps in Ge/III–V channel devices: Analysis and reliability aspects E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ... IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013 | 82 | 2013 |
| Laser-and heavy ion-induced charge collection in bulk FinFETs F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011 | 82 | 2011 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityVerified email at vanderbilt.edu
