| Sub-10 nm carbon nanotube transistor AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ... Nano letters 12 (2), 758-762, 2012 | 1040 | 2012 |
| Atomistic simulation of nanowires in the s p 3 d 5 s* tight-binding formalism: From boundary conditions to strain calculations M Luisier, A Schenk, W Fichtner, G Klimeck Physical Review B 74 (20), 205323, 2006 | 470 | 2006 |
| Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering M Luisier, G Klimeck Physical Review B 80 (15), 155430, 2009 | 265 | 2009 |
| Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling M Luisier, G Klimeck Journal of Applied Physics 107 (8), 084507, 2010 | 213 | 2010 |
| On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients C Jeong, R Kim, M Luisier, S Datta, M Lundstrom Journal of Applied Physics 107 (2), 023707, 2010 | 208 | 2010 |
| Fast methods for computing selected elements of the Green’s function in massively parallel nanoelectronic device simulations A Kuzmin, M Luisier, O Schenk Euro-Par 2013 Parallel Processing: 19th International Conference, Aachen …, 2013 | 185 | 2013 |
| Atomistic full-band design study of InAs band-to-band tunneling field-effect transistors M Luisier, G Klimeck IEEE Electron Device Letters 30 (6), 602-604, 2009 | 179 | 2009 |
| Quantum transport in two-and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism M Luisier, A Schenk, W Fichtner Journal of Applied physics 100 (4), 043713, 2006 | 164 | 2006 |
| Soft surfaces of nanomaterials enable strong phonon interactions D Bozyigit, N Yazdani, M Yarema, O Yarema, WMM Lin, S Volk, ... Nature 531, 618-622, 2016 | 147 | 2016 |
| Atomic Scale Plasmonic Switch A Emboras, J Niegemann, P Ma, C Haffner, A Pedersen, M Luisier, ... Nano letters 16, 709-714, 2016 | 134 | 2016 |
| Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures M Luisier, G Klimeck 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 112 | 2009 |
| Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness M Luisier, G Klimeck Applied Physics Letters 94 (22), 223505, 2009 | 100 | 2009 |
| The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021 | 97 | 2021 |
| Performance comparisons of III–V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm) SH Park, Y Liu, N Kharche, MS Jelodar, G Klimeck, MS Lundstrom, ... IEEE Transactions on Electron Devices 59 (8), 2107-2114, 2012 | 95 | 2012 |
| Microscopic analysis of optical gain in quantum wells B Witzigmann, V Laino, M Luisier, UT Schwarz, G Feicht, W Wegscheider, ... Applied Physics Letters 88 (2), 021104, 2006 | 92 | 2006 |
| Leakage-reduction design concepts for low-power vertical tunneling field-effect transistors S Agarwal, G Klimeck, M Luisier IEEE Electron Device Letters 31 (6), 621-623, 2010 | 90 | 2010 |
| Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations M Luisier, A Schenk, W Fichtner Applied Physics Letters 90 (10), 102103, 2007 | 87 | 2007 |
| Ab initio simulation of single- and few-layer transistors: Effect of electron-phonon scattering Á Szabó, R Rhyner, M Luisier Physical Review B 92 (3), 035435, 2015 | 86 | 2015 |
| Ab-initio simulation of van der Waals MoTe2-SnS2 heterojunction TFETs for low power electronics A Szabo, S Koester, M Luisier IEEE Electron Device Letters, 2015 | 86 | 2015 |
| Ultimate device scaling: Intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length M Luisier, M Lundstrom, DA Antoniadis, J Bokor 2011 International Electron Devices Meeting, 11.2. 1-11.2. 4, 2011 | 85 | 2011 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
