Davood Shahrjerdi
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Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee
Applied Physics Letters 94 (6), 2009
Spalling methods to form multi-junction photovoltaic structure
SW Bedell, DK Sadana, D Shahrjerdi
US Patent 8,927,318, 2015
Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
B Hekmatshoar-Tabari, M Hopstaken, DG Park, DK Sadana, GG Shahidi, ...
US Patent 9,099,585, 2015
Heterojunction III-V photovoltaic cell fabrication
SW Bedell, NS Cortes, KE Fogel, D Sadana, G Shahidi, D Shahrjerdi
US Patent 8,802,477, 2014
Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic
D Shahrjerdi, SW Bedell
Nano letters 13 (1), 315-320, 2013
Low-temperature selective epitaxial growth of silicon for device integration
B Hekmatshoar-Tabari, A Khakifirooz, A Reznicek, DK Sadana, ...
US Patent App. 14/711,403, 2015
Kerf-less removal of Si, Ge, and III–V layers by controlled spalling to enable low-cost PV technologies
SW Bedell, D Shahrjerdi, B Hekmatshoar, K Fogel, PA Lauro, JA Ott, ...
IEEE Journal of Photovoltaics 2 (2), 141-147, 2012
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ...
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
Variability in carbon nanotube transistors: Improving device-to-device consistency
AD Franklin, GS Tulevski, SJ Han, D Shahrjerdi, Q Cao, HY Chen, ...
ACS nano 6 (2), 1109-1115, 2012
Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric
D Shahrjerdi, E Tutuc, SK Banerjee
Applied Physics Letters 91 (6), 2007
Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography
X Zheng, A CalÚ, E Albisetti, X Liu, ASM Alharbi, G Arefe, X Liu, M Spieser, ...
Nature Electronics 2 (1), 17-25, 2019
High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology
D Shahrjerdi, SW Bedell, C Ebert, C Bayram, B Hekmatshoar, K Fogel, ...
Applied physics letters 100 (5), 2012
Layer transfer by controlled spalling
SW Bedell, K Fogel, P Lauro, D Shahrjerdi, JA Ott, D Sadana
Journal of Physics D: Applied Physics 46 (15), 152002, 2013
Functional simulation method
J Weaver, T Gowrishankar, G Martin, D Stewart
US Patent App. 10/011,920, 2002
Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization
D Shahrjerdi, MM Oye, AL Holmes, SK Banerjee
Applied physics letters 89 (4), 2006
Ultralight high-efficiency flexible InGaP/(In) GaAs tandem solar cells on plastic
D Shahrjerdi, SW Bedell, C Bayram, CC Lubguban, K Fogel, P Lauro, ...
Adv. Energy Mater 3 (5), 566-571, 2013
High-performance air-stable n-type carbon nanotube transistors with erbium contacts
D Shahrjerdi, AD Franklin, S Oida, JA Ott, GS Tulevski, W Haensch
ACS nano 7 (9), 8303-8308, 2013
How to report and benchmark emerging field-effect transistors
Z Cheng, CS Pang, P Wang, ST Le, Y Wu, D Shahrjerdi, I Radu, ...
Nature Electronics 5 (7), 416-423, 2022
A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee
Applied Physics Letters 109 (22), 2016
Quantitative principles for precise engineering of sensitivity in graphene electrochemical sensors
T Wu, A Alharbi, R Kiani, D Shahrjerdi
Advanced Materials 31 (6), 1805752, 2019
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