| Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee Applied Physics Letters 94 (6), 2009 | 1287 | 2009 |
| Spalling methods to form multi-junction photovoltaic structure SW Bedell, DK Sadana, D Shahrjerdi US Patent 8,927,318, 2015 | 370 | 2015 |
| Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys B Hekmatshoar-Tabari, M Hopstaken, DG Park, DK Sadana, GG Shahidi, ... US Patent 9,099,585, 2015 | 347 | 2015 |
| Heterojunction III-V photovoltaic cell fabrication SW Bedell, NS Cortes, KE Fogel, D Sadana, G Shahidi, D Shahrjerdi US Patent 8,802,477, 2014 | 253 | 2014 |
| Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic D Shahrjerdi, SW Bedell Nano letters 13 (1), 315-320, 2013 | 213 | 2013 |
| Kerf-less removal of Si, Ge, and III–V layers by controlled spalling to enable low-cost PV technologies SW Bedell, D Shahrjerdi, B Hekmatshoar, K Fogel, PA Lauro, JA Ott, ... IEEE Journal of Photovoltaics 2 (2), 141-147, 2012 | 206 | 2012 |
| Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ... 2009 IEEE international electron devices meeting (IEDM), 1-4, 2009 | 171 | 2009 |
| Variability in carbon nanotube transistors: Improving device-to-device consistency AD Franklin, GS Tulevski, SJ Han, D Shahrjerdi, Q Cao, HY Chen, ... ACS nano 6 (2), 1109-1115, 2012 | 144 | 2012 |
| Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric D Shahrjerdi, E Tutuc, SK Banerjee Applied Physics Letters 91 (6), 2007 | 142 | 2007 |
| Low-temperature selective epitaxial growth of silicon for device integration B Hekmatshoar-Tabari, A Khakifirooz, A Reznicek, DK Sadana, ... US Patent App. 14/711,403, 2015 | 130 | 2015 |
| Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography X Zheng, A Calò, E Albisetti, X Liu, ASM Alharbi, G Arefe, X Liu, M Spieser, ... Nature Electronics 2 (1), 17-25, 2019 | 127 | 2019 |
| High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology D Shahrjerdi, SW Bedell, C Ebert, C Bayram, B Hekmatshoar, K Fogel, ... Applied physics letters 100 (5), 2012 | 126 | 2012 |
| Layer transfer by controlled spalling SW Bedell, K Fogel, P Lauro, D Shahrjerdi, JA Ott, D Sadana Journal of Physics D: Applied Physics 46 (15), 152002, 2013 | 117 | 2013 |
| Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization D Shahrjerdi, MM Oye, AL Holmes, SK Banerjee Applied physics letters 89 (4), 2006 | 109 | 2006 |
| Low-temperature selective epitaxial growth of silicon for device integration B Hekmatshoar-Tabari, A Khakifirooz, A Reznicek, DK Sadana, ... US Patent 10,011,920, 2018 | 99* | 2018 |
| Ultralight High‐Efficiency Flexible InGaP/(In) GaAs Tandem Solar Cells on Plastic D Shahrjerdi, SW Bedell, C Bayram, CC Lubguban, K Fogel, P Lauro, ... Advanced Energy Materials 3 (5), 566-571, 2013 | 91 | 2013 |
| High-performance air-stable n-type carbon nanotube transistors with erbium contacts D Shahrjerdi, AD Franklin, S Oida, JA Ott, GS Tulevski, W Haensch ACS nano 7 (9), 8303-8308, 2013 | 86 | 2013 |
| A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee Applied Physics Letters 109 (22), 2016 | 73 | 2016 |
| Integrating active matrix inorganic light emitting diodes for display devices SW Bedell, B Hekmatshoartabari, DK Sadana, GG Shahidi, D Shahrjerdi US Patent 8,912,020, 2014 | 61 | 2014 |
| Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2 A Alharbi, D Armstrong, S Alharbi, D Shahrjerdi ACS nano 11 (12), 12772-12779, 2017 | 60 | 2017 |
