| Divacancy acceptor levels in ion-irradiated silicon BG Svensson, B Mohadjeri, A Hallén, JH Svensson, JW Corbett Physical Review B 43 (3), 2292, 1991 | 246 | 1991 |
| Lifetime in proton irradiated silicon A Hallén, N Keskitalo, F Masszi, V Nágl Journal of Applied Physics 79 (8), 3906-3914, 1996 | 224 | 1996 |
| Helium bubble distributions in a nanostructured ferritic alloy PD Edmondson, CM Parish, Y Zhang, A Hallén, MK Miller Journal of Nuclear Materials 434 (1-3), 210-216, 2013 | 128 | 2013 |
| Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon P Pellegrino, P Lévęque, J Lalita, A Hallén, C Jagadish, BG Svensson Physical Review B 64 (19), 195211, 2001 | 123 | 2001 |
| Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon BG Svensson, C Jagadish, A Hallén, J Lalita Physical Review B 55 (16), 10498, 1997 | 117 | 1997 |
| Pseudodonor nature of the DI defect in 4H-SiC L Storasta, FHC Carlsson, SG Sridhara, JP Bergman, A Henry, T Egilsson, ... Applied Physics Letters 78 (1), 46-48, 2001 | 113 | 2001 |
| Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC Y Zhang, WJ Weber, W Jiang, CM Wang, V Shutthanandan, A Hallen Journal of applied physics 95 (8), 4012-4018, 2004 | 110 | 2004 |
| Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis Y Zhang, WJ Weber, W Jiang, A Hallén, G Possnert Journal of applied physics 91 (10), 6388-6395, 2002 | 106 | 2002 |
| Bandgap widening in thermochromic Mg-doped VO2 thin films: Quantitative data based on optical absorption SY Li, NR Mlyuka, D Primetzhofer, A Hallén, G Possnert, GA Niklasson, ... Applied physics letters 103 (16), 2013 | 104 | 2013 |
| Helium entrapment in a nanostructured ferritic alloy PD Edmondson, CM Parish, Y Zhang, A Hallén, MK Miller Scripta Materialia 65 (8), 731-734, 2011 | 100 | 2011 |
| Electrically active defects in irradiated 4H-SiC ML David, G Alfieri, EM Monakhov, A Hallén, C Blanchard, BG Svensson, ... Journal of applied physics 95 (9), 4728-4733, 2004 | 95 | 2004 |
| Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers D Ĺberg, A Hallén, P Pellegrino, BG Svensson Applied Physics Letters 78 (19), 2908-2910, 2001 | 95* | 2001 |
| Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si EV Monakhov, BS Avset, A Hallén, BG Svensson Physical Review B 65 (23), 233207, 2002 | 88 | 2002 |
| New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector MK Linnarsson, A Hallén, J Ĺström, D Primetzhofer, S Legendre, ... Review of Scientific Instruments 83 (9), 2012 | 83 | 2012 |
| Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures HM Ayedh, R Nipoti, A Hallén, BG Svensson Applied Physics Letters 107 (25), 2015 | 77 | 2015 |
| Ion implantation of silicon carbide A Hallén, MS Janson, AY Kuznetsov, D Ĺberg, MK Linnarsson, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 75 | 2002 |
| Formation of carbon vacancy in 4H silicon carbide during high-temperature processing HM Ayedh, V Bobal, R Nipoti, A Hallén, BG Svensson Journal of Applied Physics 115 (1), 2014 | 74 | 2014 |
| Radiation damage features on mica and L-valine probed by scanning force microscopy DDNB Daya, A Hallén, J Eriksson, J Kopniczky, R Papaléo, CT Reimann, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 71 | 1995 |
| The influence of ion flux on defect production in MeV proton‐irradiated silicon A Hallén, D Fenyö, BUR Sundqvist, RE Johnson, BG Svensson Journal of applied physics 70 (6), 3025-3030, 1991 | 71 | 1991 |
| Deep level transient spectroscopy analysis of fast ion tracks in silicon A Hallén, BUR Sundqvist, Z Paska, BG Svensson, M Rosling, J Tirén Journal of applied physics 67 (3), 1266-1271, 1990 | 70 | 1990 |
