Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayers ML Green, MY Ho, B Busch, GD Wilk, T Sorsch, T Conard, B Brijs, ... Journal of Applied Physics 92 (12), 7168-7174, 2002 | 370 | 2002 |
Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ... Applied physics letters 91 (8), 2007 | 344 | 2007 |
High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 290 | 2009 |
Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization LÅ Ragnarsson, Z Li, J Tseng, T Schram, E Rohr, MJ Cho, T Kauerauf, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 278 | 2009 |
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy RL Puurunen, W Vandervorst, WFA Besling, O Richard, H Bender, ... Journal of applied physics 96 (9), 4878-4889, 2004 | 203 | 2004 |
Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy H Nohira, W Tsai, W Besling, E Young, J Pétry, T Conard, W Vandervorst, ... Journal of non-crystalline solids 303 (1), 83-87, 2002 | 202 | 2002 |
Organic and perovskite solar cells for space applications I Cardinaletti, T Vangerven, S Nagels, R Cornelissen, D Schreurs, J Hruby, ... Solar Energy Materials and Solar Cells 182, 121-127, 2018 | 165 | 2018 |
PET/MRI in head and neck cancer: initial experience I Platzek, B Beuthien-Baumann, M Schneider, V Gudziol, J Langner, ... European journal of nuclear medicine and molecular imaging 40, 6-11, 2013 | 162* | 2013 |
Passivation of Ge (100)∕ GeO2∕ high-κ gate stacks using thermal oxide treatments F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ... Journal of the Electrochemical Society 155 (2), G33, 2007 | 156 | 2007 |
Deposition of HfO2 on germanium and the impact of surface pretreatments S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ... Applied physics letters 85 (17), 3824-3826, 2004 | 136 | 2004 |
Atomic layer deposition of hafnium oxide on germanium substrates A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ... Journal of applied physics 97 (6), 2005 | 132 | 2005 |
Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties WFA Besling, E Young, T Conard, C Zhao, R Carter, W Vandervorst, ... Journal of Non-Crystalline Solids 303 (1), 123-133, 2002 | 123 | 2002 |
Characterization of Cu surface cleaning by hydrogen plasma MR Baklanov, DG Shamiryan, Z Tökei, GP Beyer, T Conard, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 113 | 2001 |
A study of the influence of typical wet chemical treatments on the germanium wafer surface B Onsia, T Conard, S De Gendt, M Heyns, I Hoflijk, P Mertens, M Meuris, ... Solid State Phenom. 103, 19-22, 2005 | 105 | 2005 |
Dielectric properties of dysprosium-and scandium-doped hafnium dioxide thin films C Adelmann, V Sriramkumar, S Van Elshocht, P Lehnen, T Conard, ... Applied Physics Letters 91 (16), 2007 | 101 | 2007 |
Low temperature deposition of 2D WS 2 layers from WF 6 and H 2 S precursors: impact of reducing agents A Delabie, M Caymax, B Groven, M Heyne, K Haesevoets, J Meersschaut, ... Chemical Communications 51 (86), 15692-15695, 2015 | 94 | 2015 |
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ... Chemistry of Materials 29 (7), 2927-2938, 2017 | 89 | 2017 |
HfO2 as gate dielectric on Ge: Interfaces and deposition techniques M Caymax, S Van Elshocht, M Houssa, A Delabie, T Conard, M Meuris, ... Materials Science and Engineering: B 135 (3), 256-260, 2006 | 87 | 2006 |
Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices S Van Elshocht, M Caymax, T Conard, S De Gendt, I Hoflijk, M Houssa, ... Applied physics letters 88 (14), 2006 | 86 | 2006 |
Complex admittance analysis for high-κ dielectric stacks G Apostolopoulos, G Vellianitis, A Dimoulas, JC Hooker, T Conard Applied physics letters 84 (2), 260-262, 2004 | 83 | 2004 |