Thierry Conard
Thierry Conard
Verified email at
Cited by
Cited by
Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayers
ML Green, MY Ho, B Busch, GD Wilk, T Sorsch, T Conard, B Brijs, ...
Journal of Applied Physics 92 (12), 7168-7174, 2002
Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide
A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ...
Applied physics letters 91 (8), 2007
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization
LÅ Ragnarsson, Z Li, J Tseng, T Schram, E Rohr, MJ Cho, T Kauerauf, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
RL Puurunen, W Vandervorst, WFA Besling, O Richard, H Bender, ...
Journal of applied physics 96 (9), 4878-4889, 2004
Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
H Nohira, W Tsai, W Besling, E Young, J Pétry, T Conard, W Vandervorst, ...
Journal of non-crystalline solids 303 (1), 83-87, 2002
Organic and perovskite solar cells for space applications
I Cardinaletti, T Vangerven, S Nagels, R Cornelissen, D Schreurs, J Hruby, ...
Solar Energy Materials and Solar Cells 182, 121-127, 2018
PET/MRI in head and neck cancer: initial experience
I Platzek, B Beuthien-Baumann, M Schneider, V Gudziol, J Langner, ...
European journal of nuclear medicine and molecular imaging 40, 6-11, 2013
Passivation of Ge (100)∕ GeO2∕ high-κ gate stacks using thermal oxide treatments
F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ...
Journal of the Electrochemical Society 155 (2), G33, 2007
Deposition of HfO2 on germanium and the impact of surface pretreatments
S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ...
Applied physics letters 85 (17), 3824-3826, 2004
Atomic layer deposition of hafnium oxide on germanium substrates
A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ...
Journal of applied physics 97 (6), 2005
Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties
WFA Besling, E Young, T Conard, C Zhao, R Carter, W Vandervorst, ...
Journal of Non-Crystalline Solids 303 (1), 123-133, 2002
Characterization of Cu surface cleaning by hydrogen plasma
MR Baklanov, DG Shamiryan, Z Tökei, GP Beyer, T Conard, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
A study of the influence of typical wet chemical treatments on the germanium wafer surface
B Onsia, T Conard, S De Gendt, M Heyns, I Hoflijk, P Mertens, M Meuris, ...
Solid State Phenom. 103, 19-22, 2005
Dielectric properties of dysprosium-and scandium-doped hafnium dioxide thin films
C Adelmann, V Sriramkumar, S Van Elshocht, P Lehnen, T Conard, ...
Applied Physics Letters 91 (16), 2007
Low temperature deposition of 2D WS 2 layers from WF 6 and H 2 S precursors: impact of reducing agents
A Delabie, M Caymax, B Groven, M Heyne, K Haesevoets, J Meersschaut, ...
Chemical Communications 51 (86), 15692-15695, 2015
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ...
Chemistry of Materials 29 (7), 2927-2938, 2017
HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
M Caymax, S Van Elshocht, M Houssa, A Delabie, T Conard, M Meuris, ...
Materials Science and Engineering: B 135 (3), 256-260, 2006
Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices
S Van Elshocht, M Caymax, T Conard, S De Gendt, I Hoflijk, M Houssa, ...
Applied physics letters 88 (14), 2006
Complex admittance analysis for high-κ dielectric stacks
G Apostolopoulos, G Vellianitis, A Dimoulas, JC Hooker, T Conard
Applied physics letters 84 (2), 260-262, 2004
The system can't perform the operation now. Try again later.
Articles 1–20