Max C. Lemme
Max C. Lemme
Professor, RWTH Aachen University, Germany, Director, AMO GmbH
Verified email at - Homepage
Cited by
Cited by
A graphene field-effect device
MC Lemme, TJ Echtermeyer, M Baus, H Kurz
IEEE Electron Device Letters 28 (4), 282-284, 2007
Efficient inkjet printing of graphene
J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Östling
Advanced Materials 25 (29), 3985-3992, 2013
Gate-activated photoresponse in a graphene p–n junction
MC Lemme, FHL Koppens, AL Falk, MS Rudner, H Park, LS Levitov, ...
Nano Letters 11 (10), 4134-4137, 2011
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2
V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ...
Physical review letters 102 (7), 076102, 2009
Precision cutting and patterning of graphene with helium ions
DC Bell, MC Lemme, LA Stern, JR Williams, CM Marcus
Nanotechnology 20 (45), 455301, 2009
Etching of graphene devices with a helium ion beam
MC Lemme, DC Bell, JR Williams, LA Stern, BWH Baugher, ...
ACS Nano 3 (9), 2674-2676, 2009
Electromechanical piezoresistive sensing in suspended graphene membranes
AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ...
Nano Letters 13 (7), 3237-3242, 2013
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS Nano 9 (5), 4776–4785, 2015
High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature
C Yim, K Lee, N McEvoy, M O'Brien, S Riazimehr, NC Berner, CP Cullen, ...
ACS Nano 10 (10), 9550–9558, 2016
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano Letters 13 (4), 1435-1439, 2013
Resistive graphene humidity sensors with rapid and direct electrical readout
AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ...
Nanoscale 7 (45), 19099-19109, 2015
Non-volatile switching in graphene field effect devices
TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz
IEEE Electron Device Letters 29 (8), 952-954, 2008
Inkjet Printing of MoS2
J Li, MM Naiini, S Vaziri, MC Lemme, M Östling
Advanced Functional Materials 24 (41), 6524-6531, 2014
Vertical graphene base transistor
W Mehr, JC Scheytt, J Dabrowski, G Lippert, YH Xie, MC Lemme, ...
IEEE Electron Device Letters 33 (5), 691-693, 2012
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
Graphene-enabled wireless communication for massive multicore architectures
S Abadal, E Alarcón, A Cabellos-Aparicio, MC Lemme, M Nemirovsky
IEEE Communications Magazine 51 (11), 137-143, 2013
Mobility in graphene double gate field effect transistors
MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ...
Solid-State Electronics 52 (4), 514-518, 2008
Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide
T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ...
Nano Letters 10 (2), 461-465, 2010
Current status of graphene transistors
MC Lemme
Solid State Phenomena 156, 499-509, 2010
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