A physics-based compact model of metal-oxide-based RRAM DC and AC operations P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ... IEEE transactions on electron devices 60 (12), 4090-4097, 2013 | 209 | 2013 |
Mixed-mode analysis of different mode silicon nanowire transistors-based inverter J Wang, G Du, K Wei, K Zhao, L Zeng, X Zhang, X Liu IEEE Transactions on Nanotechnology 13 (2), 362-367, 2014 | 24 | 2014 |
Physically based evaluation of electron mobility in ultrathin-body double-gate junctionless transistors K Wei, L Zeng, J Wang, G Du, X Liu IEEE electron device letters 35 (8), 817-819, 2014 | 23 | 2014 |
Investigation of hole mobility in strained InSb ultrathin body pMOSFETs P Chang, X Liu, L Zeng, K Wei, G Du IEEE Transactions on Electron Devices 62 (3), 947-954, 2015 | 16 | 2015 |
Comparison of band-to-band tunneling models in Si and Si—Ge junctions Y Jiao, K Wei, T Wang, G Du, X Liu Journal of Semiconductors 34 (9), 092002, 2013 | 15 | 2013 |
Impact of Random Interface Traps and Random Dopants in High- /Metal Gate Junctionless FETs Y Wang, P Huang, K Wei, L Zeng, X Liu, G Du, X Zhang, J Kang IEEE Transactions on Nanotechnology 13 (3), 584-588, 2014 | 9 | 2014 |
Random interface trap induced fluctuation in 22nm high-k/metal gate junctionless and inversion-mode FinFETs Y Wang, K Wei, X Liu, G Du, J Kang 2013 International Symposium on VLSI Technology, Systems and Application …, 2013 | 9 | 2013 |
Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method W Kangliang, L Xiaoyan, D Gang, H Ruqi Journal of Semiconductors 31 (8), 084004, 2010 | 9 | 2010 |
Three-dimensional Monte Carlo simulation of bulk fin field effect transistor JC Wang, G Du, KL Wei, X Zhang, XY Liu Chinese Physics B 21 (11), 117308, 2012 | 7 | 2012 |
Strain affected electronic properties of bilayer tungsten disulfide Z Xin, L Zeng, Y Wang, K Wei, G Du, J Kang, X Liu Japanese Journal of Applied Physics 53 (4S), 04EN06, 2014 | 6 | 2014 |
Local heating effect on negative bias temperature instability in multiple-fin SOI FinFETs H Jiang, K Wei, J Wang, B Chen, N Xu, Y He, G Du, X Liu, X Zhang 2014 Silicon Nanoelectronics Workshop (SNW), 1-2, 2014 | 4 | 2014 |
Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric KL Wei, J Egley, XY Liu, G Du Science China Information Sciences 57, 1-9, 2014 | 4 | 2014 |
Calculation of the valence band structure in strained In0.7Ga0.3As devices with different surface orientation P Chang, L Zeng, X Liu, K Wei, J Qin, K Zhao, G Du, X Zhang 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 4 | 2013 |
An adaptive grid algorithm for self-consistent k· p Schrodinger and Poisson equations in UTB InSb-based pMOSFETs P Chang, X Liu, L Zeng, K Wei, G Du 2014 International Workshop on Computational Electronics (IWCE), 1-4, 2014 | 3 | 2014 |
Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors KL Wei, XY Liu, G Du Japanese Journal of Applied Physics 52 (4S), 04CC09, 2013 | 2 | 2013 |
Simulation of band-to-band tunneling in Si/Ge and Si/Si1−xGex heterojunctions by using Monte Carlo method K Wei, L Zeng, J Wang, Y Peng, G Du, X Liu 2012 IEEE 11th International Conference on Solid-State and Integrated …, 2012 | 2 | 2012 |
Hole mobility model for Si double-gate junctionless transistors F Chen, K Wei, EI Wei, JZ Huang 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium …, 2017 | 1 | 2017 |
Three dimemsional electro-thermal coupled Monte Carlo device simulation X Liu, K Wei, L Yin, G Du, H Jiang, K Zhao, L Zeng, X Zhang 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 1 | 2014 |
Influence of gate-source/drain misalignment on the performance of bulk FinFETs by a 3D full band Monte Carlo simulation J Wang, G Du, K Wei, L Zeng, X Zhang, X Liu Journal of Semiconductors 34 (4), 044005, 2013 | 1 | 2013 |
3D parallel full band ensemble Monte Carlo devices simulation for nano scale devices application X Liu, K Wei, G Du, W Zhang, P Zhang 2012 IEEE 11th International Conference on Solid-State and Integrated …, 2012 | 1 | 2012 |