High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD M Kopytko, A Kębłowski, W Gawron, P Madejczyk, A Kowalewski, ... Opto-Electronics Review 21 (4), 402-405, 2013 | 57 | 2013 |
LWIR HgCdTe barrier photodiode with Auger-suppression M Kopytko, A Kębłowski, W Gawron, W Pusz Semiconductor Science and Technology 31 (3), 035025, 2016 | 32 | 2016 |
MOCVD grown HgCdTe barrier structures for HOT conditions (July 2014) M Kopytko, A Kębłowski, W Gawron, A Kowalewski, A Rogalski IEEE Transactions on Electron Devices 61 (11), 3803-3807, 2014 | 28 | 2014 |
Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors M Kopytko, A Kębłowski, W Gawron, P Madejczyk Opto-Electronics Review 23 (2), 143-148, 2015 | 27 | 2015 |
MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors P Madejczyk, W Gawron, P Martyniuk, A Kębłowski, A Piotrowski, ... Semiconductor science and technology 28 (10), 105017, 2013 | 27 | 2013 |
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Optical and Quantum Electronics 48, 1-7, 2016 | 25 | 2016 |
Optimization of a HOT LWIR HgCdTe photodiode for fast response and high detectivity in zero-bias operation mode M Kopytko, A Kębłowski, P Madejczyk, P Martyniuk, J Piotrowski, ... Journal of Electronic Materials 46, 6045-6055, 2017 | 23 | 2017 |
Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy L Ciura, A Kolek, A Kębłowski, D Stanaszek, A Piotrowski, W Gawron, ... Semiconductor Science and Technology 31 (3), 035004, 2016 | 22 | 2016 |
Interfacial misfit array technique for GaSb growth on GaAs (001) substrate by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Journal of Electronic Materials 47, 299-304, 2018 | 21 | 2018 |
Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Opto-Electronics Review 24 (1), 40-45, 2016 | 20 | 2016 |
Numerical analysis of HgCdTe dual-band infrared detector M Kopytko, W Gawron, A Kębłowski, D Stępień, P Martyniuk, ... Optical and Quantum Electronics 51 (3), 62, 2019 | 19 | 2019 |
Electrical properties of midwave and longwave InAs/GaSb superlattices grown on GaAs substrates by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, J Boguski, A Kębłowski, ... Nanoscale Research Letters 13, 1-7, 2018 | 19 | 2018 |
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ... Journal of Crystal Growth 483, 26-30, 2018 | 17 | 2018 |
MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions P Martyniuk, A Koźniewski, A Kębłowski, W Gawron, A Rogalski Opto-Electronics Review 22 (2), 118-126, 2014 | 14 | 2014 |
Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors W Gawron, P Martyniuk, A Kębłowski, K Kolwas, D Stępień, J Piotrowski, ... Solid-State Electronics 118, 61-65, 2016 | 13 | 2016 |
Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ... Journal of Semiconductors 39 (3), 033003, 2018 | 12 | 2018 |
MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation M Kopytko, A Kębłowski, W Gawron, P Martyniuk, P Madejczyk, ... Optical Engineering 54 (10), 105105-105105, 2015 | 11 | 2015 |
Higher operating temperature IR detectors of the MOCVD grown HgCdTe heterostructures P Madejczyk, W Gawron, A Kębłowski, K Mlynarczyk, D Stępień, ... Journal of Electronic Materials 49, 6908-6917, 2020 | 10 | 2020 |
Minority carrier lifetime in HgCdTe (100) epilayers and their potential application to background radiation limited MWIR photodiodes M Kopytko, J Sobieski, W Gawron, A Kębłowski, J Piotrowski Semiconductor Science and Technology 36 (5), 055003, 2021 | 9 | 2021 |
Electrical and optical performance of midwave infrared InAsSb heterostructure detectors E Gomółka, M Kopytko, O Markowska, K Michalczewski, Ł Kubiszyn, ... Optical Engineering 57 (2), 027107-027107, 2018 | 9 | 2018 |