Zheng Fang
Zheng Fang
Research Scientist
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A low energy oxide‐based electronic synaptic device for neuromorphic visual systems with tolerance to device variation
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
Advanced Materials 25 (12), 1774-1779, 2013
Adsorption of Cu2+, Cd2+ and Ni2+ from aqueous single metal solutions on graphene oxide membranes
P Tan, J Sun, Y Hu, Z Fang, Q Bi, Y Chen, J Cheng
Journal of hazardous materials 297, 251-260, 2015
A neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
2012 International Electron Devices Meeting, 10.4. 1-10.4. 4, 2012
Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
Z Fang, HY Yu, X Li, N Singh, GQ Lo, DL Kwong
IEEE Electron Device Letters 32 (4), 566-568, 2011
Stochastic learning in oxide binary synaptic device for neuromorphic computing
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
Frontiers in neuroscience 7, 186, 2013
Physical mechanisms of endurance degradation in TMO-RRAM
B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ...
2011 International electron devices meeting, 12.3. 1-12.3. 4, 2011
Temperature Instability of Resistive Switching on -Based RRAM Devices
Z Fang, HY Yu, WJ Liu, ZR Wang, XA Tran, B Gao, JF Kang
IEEE Electron Device Letters 31 (5), 476-478, 2010
Conversion of biological solid waste to graphene-containing biochar for water remediation: A critical review
Z Fang, Y Gao, N Bolan, SM Shaheen, S Xu, X Wu, X Xu, H Hu, J Lin, ...
Chemical Engineering Journal 390, 124611, 2020
Experimental and theoretical study of electrode effects in HfO2 based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
Highly Uniform, Self-Compliance, and Forming-Free ALD -Based RRAM With Ge Doping
Z Wang, WG Zhu, AY Du, L Wu, Z Fang, XA Tran, WJ Liu, KL Zhang, ...
IEEE Transactions on electron devices 59 (4), 1203-1208, 2012
Modeling of retention failure behavior in bipolar oxide-based resistive switching memory
B Gao, H Zhang, B Chen, L Liu, X Liu, R Han, J Kang, Z Fang, H Yu, B Yu, ...
IEEE Electron Device Letters 32 (3), 276-278, 2011
Engineered biochar for environmental decontamination in aquatic and soil systems: a review
H Chen, Y Gao, J Li, Z Fang, N Bolan, A Bhatnagar, B Gao, D Hou, ...
Carbon Research 1 (1), 4, 2022
A High-Yield -Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration
XA Tran, HY Yu, YC Yeo, L Wu, WJ Liu, ZR Wang, Z Fang, KL Pey, ...
IEEE Electron Device Letters 32 (3), 396-398, 2011
Highly compact 1T-1R architecture (4F2footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting …
XP Wang, Z Fang, X Li, B Chen, B Gao, JF Kang, ZX Chen, A Kamath, ...
2012 International Electron Devices Meeting, 20.6. 1-20.6. 4, 2012
The Role of Ti Capping Layer in HfOx-Based RRAM Devices
Z Fang, XP Wang, J Sohn, BB Weng, ZP Zhang, ZX Chen, YZ Tang, ...
IEEE Electron Device Letters 35 (9), 912-914, 2014
All-metal-nitride RRAM devices
Z Zhang, B Gao, Z Fang, X Wang, Y Tang, J Sohn, HSP Wong, SS Wong, ...
IEEE Electron Device Letters 36 (1), 29-31, 2014
Interactions between organic matter and Fe (hydr) oxides and their influences on immobilization and remobilization of metal (loid) s: a review
Y Bao, NS Bolan, J Lai, Y Wang, X Jin, MB Kirkham, X Wu, Z Fang, ...
Critical Reviews in Environmental Science and Technology 52 (22), 4016-4037, 2022
Transport properties of HfO 2− x based resistive-switching memories
Z Wang, HY Yu, XA Tran, Z Fang, J Wang, H Su
Physical review B 85 (19), 195322, 2012
A novel magnesium ascorbyl phosphate graphene-based monolith and its superior adsorption capability for bisphenol A
Z Fang, Y Hu, X Wu, Y Qin, J Cheng, Y Chen, P Tan, H Li
Chemical Engineering Journal 334, 948-956, 2018
Effect of the degree of oxidation and defects of graphene oxide on adsorption of Cu2+ from aqueous solution
P Tan, Q Bi, Y Hu, Z Fang, Y Chen, J Cheng
Applied Surface Science 423, 1141-1151, 2017
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