SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay B Heinemann, R Barth, D Bolze, J Drews, GG Fischer, A Fox, O Fursenko, ... 2010 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2010 | 304 | 2010 |
SiGe HBT with fx/fmax of 505 GHz/720 GHz B Heinemann, H Rücker, R Barth, F Bärwolf, J Drews, GG Fischer, A Fox, ... 2016 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2016 | 230 | 2016 |
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ... 2D Materials 4 (2), 025075, 2017 | 138 | 2017 |
Dispersion engineered silicon nitride waveguides by geometrical and refractive-index optimization JMC Boggio, D Bodenmüller, T Fremberg, R Haynes, MM Roth, ... JOSA B 31 (11), 2846-2857, 2014 | 81 | 2014 |
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ... ACS applied materials & interfaces 8 (49), 33786-33793, 2016 | 75 | 2016 |
Monolithically integrated 25Gbit/sec receiver for 1.55 μm in photonic BiCMOS technology D Knoll, S Lischke, L Zimmermann, B Heinemann, D Micusik, ... Optical Fiber Communication Conference, Th4C. 4, 2014 | 59 | 2014 |
High-performance photonic BiCMOS process for the fabrication of high-bandwidth electronic-photonic integrated circuits D Knoll, S Lischke, R Barth, L Zimmermann, B Heinemann, H Rucker, ... 2015 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2015 | 50 | 2015 |
Frequency and risk factors associated with dry eye in patients attending a tertiary care ophthalmology center in Mexico City JD Martinez, A Galor, N Ramos-Betancourt, A Lisker-Cervantes, F Beltrán, ... Clinical Ophthalmology, 1335-1342, 2016 | 47 | 2016 |
SciFab–A wafer‐level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm‐wave applications NG Weimann, D Stoppel, MI Schukfeh, M Hossain, T Al‐Sawaf, B Janke, ... physica status solidi (a) 213 (4), 909-916, 2016 | 44 | 2016 |
Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory DJ Wouters, D Maes, L Goux, JG Lisoni, V Paraschiv, JA Johnson, ... Journal of applied physics 100 (5), 2006 | 34 | 2006 |
InP-DHBT-on-BiCMOS Technology With of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources T Kraemer, I Ostermay, T Jensen, TK Johansen, FJ Schmueckle, A Thies, ... IEEE transactions on electron devices 60 (7), 2209-2216, 2013 | 33 | 2013 |
Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene R Lukose, M Lisker, F Akhtar, M Fraschke, T Grabolla, A Mai, M Lukosius Scientific reports 11 (1), 13111, 2021 | 27 | 2021 |
Ag films grown by remote plasma enhanced atomic layer deposition on different substrates AA Amusan, B Kalkofen, H Gargouri, K Wandel, C Pinnow, M Lisker, ... Journal of Vacuum Science & Technology A 34 (1), 2016 | 27 | 2016 |
Iridium Thin Films Deposited by Liquid Delivery MOCVD using Ir (EtCp)(1, 5‐COD) with Toluene Solvent Y Ritterhaus, T Hur'yeva, M Lisker, EP Burte Chemical Vapor Deposition 13 (12), 698-704, 2007 | 26 | 2007 |
Fabrication and investigation of three-dimensional ferroelectric capacitors for the application of FeRAM CP Yeh, M Lisker, B Kalkofen, EP Burte AIP Advances 6 (3), 2016 | 25 | 2016 |
Effect of annealing in oxygen atmosphere on morphological and electrical properties of iridium and ruthenium thin films prepared by liquid delivery MOCVD M Lisker, T Hur’yeva, Y Ritterhaus, EP Burte Surface and Coatings Technology 201 (22-23), 9294-9298, 2007 | 25 | 2007 |
Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam Epitaxy K Xiong, M Hilse, L Li, A Göritz, M Lisker, M Wietstruck, M Kaynak, ... IEEE Transactions on Electron Devices 67 (3), 796-801, 2020 | 21 | 2020 |
Liquid‐Delivery MOCVD of Strontium Bismuth Tantalate Thin Films Using Sr[Ta(OC2H5)5(OCH2CH2OCH3)]2 and Liquid Bi(CH2CH=CH2)3 as Precursors JY Hyeon, M Lisker, M Silinskas, E Burte, FT Edelmann Chemical Vapor Deposition 11 (4), 213-218, 2005 | 21 | 2005 |
Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon B Kalkofen, AA Amusan, MSK Bukhari, B Garke, M Lisker, H Gargouri, ... Journal of Vacuum Science & Technology A 33 (3), 2015 | 20 | 2015 |
Application of atomic layer deposited dopant sources for ultra‐shallow doping of silicon B Kalkofen, AA Amusan, M Lisker, EP Burte physica status solidi (c) 11 (1), 41-45, 2014 | 19 | 2014 |