Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer K Hirama, H Sato, Y Harada, H Yamamoto, M Kasu Japanese Journal of Applied Physics 51 (9R), 090112, 2012 | 231 | 2012 |
Edge channel transport in the InAs/GaSb topological insulating phase K Suzuki, Y Harada, K Onomitsu, K Muraki Physical Review B 87 (23), 235311, 2013 | 159 | 2013 |
Charge solitons and quantum fluctuations in two-dimensional arrays of small Josephson junctions P Delsing, CD Chen, DB Haviland, Y Harada, T Claeson Physical Review B 50 (6), 3959, 1994 | 114 | 1994 |
Observation of the resonant tunneling of Cooper pairs DB Haviland, Y Harada, P Delsing, CD Chen, T Claeson Physical review letters 73 (11), 1541, 1994 | 86 | 1994 |
Fabrication and measurement of a Nb based superconducting single electron transistor Y Harada, DB Haviland, P Delsing, CD Chen, T Claeson Applied physics letters 65 (5), 636-638, 1994 | 74 | 1994 |
Scaling behavior of the magnetic-field-tuned superconductor-insulator transition in two-dimensional Josephson-junction arrays CD Chen, P Delsing, DB Haviland, Y Harada, T Claeson Physical Review B 51 (21), 15645, 1995 | 69 | 1995 |
Thermally Stable Operation of H-Terminated Diamond FETs by Adsorption and Passivation K Hirama, H Sato, Y Harada, H Yamamoto, M Kasu IEEE Electron Device Letters 33 (8), 1111-1113, 2012 | 67 | 2012 |
Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure K Suzuki, Y Harada, K Onomitsu, K Muraki Physical Review B 91 (24), 245309, 2015 | 54 | 2015 |
Quantum Hall effect and carrier scattering in quasi-free-standing monolayer graphene S Tanabe, M Takamura, Y Harada, H Kageshima, H Hibino Applied Physics Express 5 (12), 125101, 2012 | 37 | 2012 |
Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene S Tanabe, M Takamura, Y Harada, H Kageshima, H Hibino Japanese Journal of Applied Physics 53 (4S), 04EN01, 2014 | 35 | 2014 |
Slow noise processes in superconducting resonators J Burnett, T Lindström, M Oxborrow, Y Harada, Y Sekine, P Meeson, ... Physical Review B 87 (14), 140501, 2013 | 33 | 2013 |
Encapsulated gate-all-around InAs nanowire field-effect transistors S Sasaki, K Tateno, G Zhang, H Suominen, Y Harada, S Saito, A Fujiwara, ... Applied Physics Letters 103 (21), 2013 | 29 | 2013 |
Semiconductor device N Kumagai, Y Harada, S Jimbo, Y Ikura, T Fujihira, K Yoshida US Patent App. 10/301,489, 2003 | 24 | 2003 |
Semiconductor device and method of manufacturing semiconductor device T Shiigi, S Yamada, Y Harada, Y Hoshi US Patent 10,784,256, 2020 | 23 | 2020 |
Flux flow and vortex tunneling in two-dimensional arrays of small Josephson junctions CD Chen, P Delsing, DB Haviland, Y Harada, T Claeson Physical Review B 54 (13), 9449, 1996 | 23 | 1996 |
Cooper-pair tunneling in small junctions with tunable Josephson coupling Y Harada, H Takayanagi, AA Odintsov Physical Review B 54 (9), 6608, 1996 | 23 | 1996 |
Nanowire-nanoantenna coupled system fabricated by nanomanipulation M Ono, E Kuramochi, G Zhang, H Sumikura, Y Harada, D Cox, M Notomi Optics express 24 (8), 8647-8659, 2016 | 17 | 2016 |
Josephson coupling through one-dimensional ballistic channel in semiconductor-superconductor hybrid quantum point contacts H Irie, Y Harada, H Sugiyama, T Akazaki Physical Review B 89 (16), 165415, 2014 | 17 | 2014 |
Gate operation of InAs/AlGaSb heterostructures with an atomic-layer-deposited insulating layer K Suzuki, Y Harada, F Maeda, K Onomitsu, T Yamaguchi, K Muraki Applied Physics Express 4 (12), 125702, 2011 | 17 | 2011 |
High performance SiC IEMOSFET/SBD module S Harada, Y Hoshi, Y Harada, T Tsuji, A Kinoshita, M Okamoto, ... Materials Science Forum 717, 1053-1058, 2012 | 13 | 2012 |