| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021 | 312 | 2021 |
| Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature Communications 11 (1), 3385, 2020 | 267 | 2020 |
| The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D Materials 3 (3), 035004, 2016 | 191 | 2016 |
| Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... Nature Electronics 2 (6), 230-235, 2019 | 161 | 2019 |
| The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021 | 158 | 2021 |
| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 154 | 2018 |
| Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser IEEE Electron Device Letters 38 (12), 1763-1766, 2017 | 93 | 2017 |
| Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ... ACS nano 12 (6), 5368-5375, 2018 | 55 | 2018 |
| Highly-stable black phosphorus field-effect transistors with low density of oxide traps YY Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ... npj 2D Materials and Applications 1 (1), 23, 2017 | 55 | 2017 |
| A Physical Model for the Hysteresis in MoS2 Transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ... IEEE Journal of the Electron Devices Society 6, 972-978, 2018 | 53 | 2018 |
| Energetic mapping of oxide traps in MoS2 field-effect transistors YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ... 2D Materials 4 (2), 025108, 2017 | 53 | 2017 |
| Dielectric Properties of Ultrathin CaF2 Ionic Crystals C Wen, AG Banshchikov, YY Illarionov, W Frammelsberger, T Knobloch, ... Advanced Materials 32 (34), 2002525, 2020 | 45 | 2020 |
| Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire M Gillinger, K Shaposhnikov, T Knobloch, M Schneider, M Kaltenbacher, ... Applied physics letters 108 (23), 2016 | 37 | 2016 |
| Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... 2D Materials 6 (4), 045004, 2019 | 35 | 2019 |
| Efficient physical defect model applied to PBTI in high-κ stacks G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017 | 31 | 2017 |
| Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide X Song, F Hui, T Knobloch, B Wang, Z Fan, T Grasser, X Jing, Y Shi, ... Applied Physics Letters 111 (8), 2017 | 30 | 2017 |
| Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning T Knobloch, B Uzlu, YY Illarionov, Z Wang, M Otto, L Filipovic, M Waltl, ... Nature Electronics 5 (6), 356-366, 2022 | 27 | 2022 |
| Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology? M Waltl, T Knobloch, K Tselios, L Filipovic, B Stampfer, Y Hernandez, ... Advanced Materials 34 (48), 2201082, 2022 | 23 | 2022 |
| Challenges for nanoscale CMOS logic based on two-dimensional materials T Knobloch, S Selberherr, T Grasser Nanomaterials 12 (20), 3548, 2022 | 15 | 2022 |
| Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance R Zhao, CL Lo, F Zhang, RK Ghosh, T Knobloch, M Terrones, Z Chen, ... Advanced Materials Interfaces 6 (22), 1901055, 2019 | 15 | 2019 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEVerified email at iue.tuwien.ac.at
