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Theresia Knobloch
Theresia Knobloch
Researcher, TU Wien
Verified email at iue.tuwien.ac.at - Homepage
Title
Cited by
Cited by
Year
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D Materials 3 (3), 035004, 2016
1492016
Insulators for 2D nanoelectronics: the gap to bridge
YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature communications 11 (1), 1-15, 2020
1272020
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
1182018
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
Nature Electronics 2 (6), 230-235, 2019
932019
Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation
YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser
IEEE Electron Device Letters 38 (12), 1763-1766, 2017
752017
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
712021
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4 (11), 786-799, 2021
632021
Highly-stable black phosphorus field-effect transistors with low density of oxide traps
Y Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ...
npj 2D Materials and Applications 1 (1), 1-7, 2017
472017
Energetic mapping of oxide traps in MoS2 field-effect transistors
YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ...
2D Materials 4 (2), 025108, 2017
432017
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors
B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ...
ACS nano 12 (6), 5368-5375, 2018
372018
A Physical Model for the Hysteresis in MoS2 Transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ...
IEEE Journal of the Electron Devices Society 6, 972-978, 2018
362018
Efficient physical defect model applied to PBTI in high-κ stacks
G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
302017
Dielectric Properties of Ultrathin CaF2 Ionic Crystals
C Wen, AG Banshchikov, YY Illarionov, W Frammelsberger, T Knobloch, ...
Advanced Materials 32 (34), 2002525, 2020
272020
Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide
X Song, F Hui, T Knobloch, B Wang, Z Fan, T Grasser, X Jing, Y Shi, ...
Applied Physics Letters 111 (8), 083107, 2017
242017
Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire
M Gillinger, K Shaposhnikov, T Knobloch, M Schneider, M Kaltenbacher, ...
Applied Physics Letters 108 (23), 231601, 2016
242016
Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
2D Materials 6 (4), 045004, 2019
162019
Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance
R Zhao, CL Lo, F Zhang, RK Ghosh, T Knobloch, M Terrones, Z Chen, ...
Advanced Materials Interfaces 6 (22), 1901055, 2019
112019
Performance of thin AlxOy, SixNy and AlN passivation layers for high temperature SAW device applications
M Gillinger, T Knobloch, A Marković, G Pfusterschmied, M Schneider, ...
Materials Science in Semiconductor Processing 81, 1-6, 2018
102018
Harsh environmental surface acoustic wave temperature sensor based on pure and scandium doped aluminum nitride on sapphire
M Gillinger, T Knobloch, M Schneider, U Schmid
Multidisciplinary Digital Publishing Institute Proceedings 1 (4), 341, 2017
92017
Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications
M Gillinger, K Shaposhnikov, T Knobloch, M Stöger-Pollach, W Artner, ...
Applied Surface Science 435, 432-437, 2018
72018
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